BSZ123N08NS3GATMA1

BSZ123N08NS3GATMA1
Mfr. #:
BSZ123N08NS3GATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 80V 40A TSDSON-8 OptiMOS 3
Lifecycle:
New from this manufacturer.
Datasheet:
BSZ123N08NS3GATMA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
BSZ123N08NS3GATMA1 DatasheetBSZ123N08NS3GATMA1 Datasheet (P4-P6)BSZ123N08NS3GATMA1 Datasheet (P7-P9)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TSDSON-8
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
80 V
Id - Continuous Drain Current:
40 A
Rds On - Drain-Source Resistance:
10.3 mOhms
Vgs th - Gate-Source Threshold Voltage:
2 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
25 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
66 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
OptiMOS
Packaging:
Reel
Height:
1.1 mm
Length:
3.3 mm
Series:
OptiMOS 3
Transistor Type:
1 N-Channel
Width:
3.3 mm
Brand:
Infineon Technologies
Forward Transconductance - Min:
17 S
Fall Time:
4 ns
Product Type:
MOSFET
Rise Time:
18 ns
Factory Pack Quantity:
5000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
19 ns
Typical Turn-On Delay Time:
12 ns
Part # Aliases:
BSZ123N08NS3 BSZ123N8NS3GXT G SP000443632
Unit Weight:
0.004938 oz
Tags
BSZ123, BSZ12, BSZ1, BSZ
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 80 V 12.3 mOhm 19 nC OptiMOS™ Power Mosfet - TSDSON-8
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:40A; On Resistance Rds(On):0.0103Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V Rohs Compliant: Yes
***ment14 APAC
MOSFET, N CH, 40A, 80V, PG-TSDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:80V; On Resistance Rds(on):10.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.8V; Power Dissipation Pd:66W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:40A; Power Dissipation Pd:66W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon
OptiMOS is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). | Summary of Features: Optimized technology for DC-DC converters; Excellent gate charge x R DS(ON) product (FOM); Superior thermal resistance; Dual sided cooling; Low parasitic inductance; Low profile (<0,7mm); N-channel, normal level; 100% avalanche tested; Pb-free plating; RoHS compliant | Target Applications: Solar; Consumer; Telecom; Server; PC power; DC-DC; AC-DC; Adapter; SMPS; LED; Motor control
Part # Mfg. Description Stock Price
BSZ123N08NS3GATMA1
DISTI # V72:2272_06384484
Infineon Technologies AGTrans MOSFET N-CH 80V 10A Automotive 8-Pin TSDSON EP T/R
RoHS: Compliant
16730
  • 75000:$0.4638
  • 30000:$0.4910
  • 15000:$0.5181
  • 6000:$0.5453
  • 3000:$0.5725
  • 1000:$0.5996
  • 500:$0.6219
  • 250:$0.6915
  • 100:$0.7524
  • 50:$0.8008
  • 25:$0.9120
  • 10:$0.9373
  • 1:$1.0578
BSZ123N08NS3GATMA1
DISTI # BSZ123N08NS3GATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 80V 40A TSDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
49468In Stock
  • 1000:$0.6174
  • 500:$0.7821
  • 100:$1.0085
  • 10:$1.2760
  • 1:$1.4400
BSZ123N08NS3GATMA1
DISTI # BSZ123N08NS3GATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 80V 40A TSDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
49468In Stock
  • 1000:$0.6174
  • 500:$0.7821
  • 100:$1.0085
  • 10:$1.2760
  • 1:$1.4400
BSZ123N08NS3GATMA1
DISTI # BSZ123N08NS3GATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 80V 40A TSDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
On Order
  • 5000:$0.5315
BSZ123N08NS3GATMA1
DISTI # 31079585
Infineon Technologies AGTrans MOSFET N-CH 80V 10A Automotive 8-Pin TSDSON EP T/R
RoHS: Compliant
16730
  • 15000:$0.5160
  • 6000:$0.5442
  • 3000:$0.5725
  • 1000:$0.6007
  • 500:$0.6201
  • 250:$0.6889
  • 100:$0.7502
  • 50:$0.7979
  • 25:$0.9080
  • 13:$0.9333
BSZ123N08NS3GATMA1
DISTI # BSZ123N08NS3GATMA1
Infineon Technologies AGTrans MOSFET N-CH 80V 10A 8-Pin TSDSON T/R - Tape and Reel (Alt: BSZ123N08NS3GATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel
Americas - 0
  • 5000:$0.4739
  • 10000:$0.4729
  • 20000:$0.4709
  • 30000:$0.4699
  • 50000:$0.4689
BSZ123N08NS3GATMA1.
DISTI # 27AC1116
Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:40A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.0103ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V,Power Dissipation Pd:66W,No. of Pins:8Pins RoHS Compliant: Yes0
  • 1:$0.4740
  • 10000:$0.4730
  • 20000:$0.4710
  • 30000:$0.4700
  • 50000:$0.4690
BSZ123N08NS3 G
DISTI # 726-BSZ123N08NS3G
Infineon Technologies AGMOSFET N-Ch 80V 40A TSDSON-8 OptiMOS 3
RoHS: Compliant
44
  • 1:$1.2000
  • 10:$1.0200
  • 100:$0.7820
  • 500:$0.6910
  • 1000:$0.5450
  • 5000:$0.4840
BSZ123N08NS3GATMA1
DISTI # 726-BSZ123N08NS3GATM
Infineon Technologies AGMOSFET N-Ch 80V 40A TSDSON-8 OptiMOS 3
RoHS: Compliant
0
  • 1:$1.2000
  • 10:$1.0200
  • 100:$0.7820
  • 500:$0.6910
  • 1000:$0.5450
  • 5000:$0.4840
BSZ123N08NS3GATMA1
DISTI # 1775505
Infineon Technologies AGMOSFET, N CH, 40A, 80V, PG-TSDSON-8
RoHS: Compliant
6
  • 5:£1.0900
  • 25:£0.9840
  • 100:£0.7550
BSZ123N08NS3GATMA1
DISTI # 1775505
Infineon Technologies AGMOSFET, N CH, 40A, 80V, PG-TSDSON-8
RoHS: Compliant
0
  • 1:$1.9100
  • 10:$1.6200
  • 100:$1.2400
  • 500:$1.1000
  • 1000:$0.8630
  • 5000:$0.7660
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Availability
Stock:
13
On Order:
1996
Enter Quantity:
Current price of BSZ123N08NS3GATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$1.19
$1.19
10
$1.01
$10.10
100
$0.78
$78.20
500
$0.69
$345.50
1000
$0.54
$545.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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