PMDXB1200UPEZ

Mfr. #:: PMDXB1200UPEZ
Manufacturer:: Nexperia
Description:: MOSFET 30V Dual P-Channel Trench MOSFET
Lifecycle:: New from this manufacturer.
Datasheet:: PMDXB1200UPEZ Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: PMDXB1200UPEZ Datasheet PMDXB1200UPEZ Datasheet (P4-P6)PMDXB1200UPEZ Datasheet (P7-P9)PMDXB1200UPEZ Datasheet (P10-P12)PMDXB1200UPEZ Datasheet (P13-P15)PMDXB1200UPEZ Datasheet (P16)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Nexperia

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Package / Case:: DFN-1010B-6

Packaging:: Reel

Brand:: Nexperia

Product Type:: MOSFET

Factory Pack Quantity:: 5000

Subcategory:: MOSFETs

Tags: PMDX, PMD

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We guarantee 100% customer satisfaction.

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

PMDXB1200UPEZ Description

***ark: Dual Mosfet, Dual P Channel, -410 Ma, -30 V, 1.2 Ohm, -4.5 V, -700 Mv Rohs Compliant: Yes

***et Europe: Transistor MOSFET Array Dual P-CH 30V 410mA 8-Pin DFN1010B-6 T/R

***peria: PMDXB1200UPE - 30 V, dual P-channel Trench MOSFET

***ment14 APAC: MOSFET, DUAL P-CH, -30V, -0.41A, DFN-6; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-410mA; Source Voltage Vds:-30V; On

***nell: MOSFET, DUAL P-CH, -30V, -0.41A, DFN-6; Transistor Polarity: Dual P Channel; Continuous Drain Current Id: -410mA; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 1.2ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -700mV; Power Dissipation Pd: 285mW; Transistor Case Style: DFN1010B; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)

***ure Electronics: P-Channel 30 V 530 mA 1 Ohm Surface Mount Enhancement Mode Mosfet - SOT-23

***ark: Mosfet, P-Ch, 30V, 0.67A, Sot-23 Rohs Compliant: Yes

***(Formerly Allied Electronics): MOSFET P-Ch 30V 0.67A Enhancement SOT23

***des Inc SCT: P-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 8±V VGS

***et Japan: Transistor MOSFET Array Dual N-CH 30V 400mA 5-Pin SOT-353 T/R

***des Inc SCT: COMMON SOURCE DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR, 30V VDS, 10±V VGS

***el Nordic: Contact for details

*** International: DIODES SOT-353

***ure Electronics: N-Channel 30 V 1.2 Ohm Enhancement Mode Mosfet - DFN-3

***ark: Mosfet, N-Ch, 30V, 0.3A, X2-Dfn1006 Rohs Compliant: Yes

***des Inc SCT: N-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 10±V VGS

***Yang: Trans MOSFET P-CH 25V 0.46A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled

***id Electronics: Transistor MOSFET P-Ch. -0,46A/-25V SOT23 FDV 304 P

***enic: 25V 460mA 1.1´Î@4.5V500mA 350mW 1.5V@250Ã×A P Channel SOT-23(SOT-23-3) MOSFETs ROHS

***-Wing Technology: ON SEMICONDUCTOR - FDV304P - Power MOSFET, P Channel, 25 V, 460 mA, 1.22 ohm, SOT-23, Surface Mount

***r Electronics: Small Signal Field-Effect Transistor, 0.46A I(D), 25V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236

***rchild Semiconductor: This P-Channel enhancement mode field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at low gate drive conditions. This device is designed especially for application in battery power applications such as notebook computers and cellular phones. This device has excellent on-state resistance even at gate drive voltages as low as 2.5 volts.

***trelec: Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) mA = -460 / Drain-Source Voltage (Vds) V = -25 / ON Resistance (Rds(on)) Ohm = 1.5 / Gate-Source Voltage V = -8 / Fall Time ns = 35 / Rise Time ns = 8 / Turn-OFF Delay Time ns = 55 / Turn-ON Delay Time ns = 7 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 350

***hard Electronics: VISHAY SI1028X-T1-GE3 Dual MOSFET, Dual N Channel, 480 mA, 30 V, 0.54 ohm, 10 V, 1 V

***et: Trans MOSFET N-CH 30V 0.48A 6-Pin SC-89 T/R

***S: French Electronic Distributor since 1988

***ronik: N-CHAN.DUAL-FET 30V 0,48A SC89

***nell: MOSFET, N-CH, 30V, 6-SC-89; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:480mA; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.54ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:220mW; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SC-89; No. of Pins:6; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C

***eco: Transistor MOSFET Negative Channel 25 Volt 0.5A 6-Pin SC-70 T/R

***et Europe: Transistor MOSFET Array Dual N-CH 25V 0.5A 6-Pin SC-70 T/R

***ment14 APAC: MOSFET; Module Configuration:Dual; Transistor Polarity:N Channel; Continuous Drain Current Id:500mA; Drain Source Voltage Vds:25V; On Resistance Rds(on):450mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:800mV

***nell: MOSFET, NN; Transistor Type:MOSFET; Transistor Polarity:NN; Voltage, Vds Typ:25V; Current, Id Cont:0.5A; On State Resistance:0.34ohm; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:0.8V; Case Style:SC-70; Termination Type:SMD; Transistor Case Style:SC-70

***rchild Semiconductor: These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETS.

Market price

Part #	Mfg.	Description	Stock	Price
PMDXB1200UPEZ DISTI # V36:1790_09156744	Nexperia	Trans MOSFET P-CH 30V 410A 6-Pin DFN-B EP T/R	0
PMDXB1200UPEZ DISTI # 1727-2276-1-ND	Nexperia	MOSFET 2P-CH 30V 0.41A 6DFN RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	13248In Stock	1000:$0.1216 500:$0.1622 100:$0.2162 10:$0.3180 1:$0.3900
PMDXB1200UPEZ DISTI # 1727-2276-6-ND	Nexperia	MOSFET 2P-CH 30V 0.41A 6DFN RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	13248In Stock	1000:$0.1216 500:$0.1622 100:$0.2162 10:$0.3180 1:$0.3900
PMDXB1200UPEZ DISTI # 1727-2276-2-ND	Nexperia	MOSFET 2P-CH 30V 0.41A 6DFN RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	10000In Stock	25000:$0.0918 10000:$0.0951 5000:$0.1017
PMDXB1200UPEZ DISTI # PMDXB1200UPEZ	Nexperia	Trans MOSFET P-CH 30V 0.41A 8-Pin DFN T/R - Tape and Reel (Alt: PMDXB1200UPEZ) RoHS: Compliant Min Qty: 10000 Container: Reel	Americas - 0	100000:$0.0789 50000:$0.0799 30000:$0.0829 20000:$0.0849 10000:$0.0859
PMDXB1200UPEZ DISTI # 771-PMDXB1200UPEZ	Nexperia	MOSFET 30V Dual P-Channel Trench MOSFET RoHS: Compliant	21263	1:$0.3900 10:$0.2910 100:$0.1580 1000:$0.1190 5000:$0.1020 10000:$0.0960 25000:$0.0880 50000:$0.0840
PMDXB1200UPEZ DISTI # 1530747	Nexperia	MOSFET DUAL P-CH 30V 410MA DFN1010B, RL	4975	10000:£0.0670 5000:£0.0710
PMDXB1200UPEZ DISTI # 2498566	Nexperia	MOSFET, DUAL P-CH, -30V, -0.41A, DFN-6	3537	500:£0.0990 250:£0.1130 100:£0.1170 25:£0.2280 5:£0.2630
PMDXB1200UPEZ DISTI # 2498566RL	Nexperia	MOSFET, DUAL P-CH, -30V, -0.41A, DFN-6 RoHS: Compliant	0	1000:$0.1710 500:$0.1990 250:$0.2340 100:$0.2920 25:$0.4540 1:$0.5450
PMDXB1200UPEZ DISTI # 2498566	Nexperia	MOSFET, DUAL P-CH, -30V, -0.41A, DFN-6 RoHS: Compliant	3317	1000:$0.1710 500:$0.1990 250:$0.2340 100:$0.2920 25:$0.4540 1:$0.5450

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Availability

Stock:: 21
On Order:: 2004
Enter Quantity:

Current price of PMDXB1200UPEZ is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$0.39~~; ~~$0.39~~

10: ~~$0.29~~; ~~$2.91~~

100: ~~$0.16~~; ~~$15.80~~

1000: ~~$0.12~~; ~~$119.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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PMDXB1200UPEZ

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes