IPN60R3K4CEATMA1

Mfr. #:: IPN60R3K4CEATMA1
Manufacturer:: Infineon Technologies
Description:: MOSFET CONSUMER
Lifecycle:: New from this manufacturer.
Datasheet:: IPN60R3K4CEATMA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:
More Information:: IPN60R3K4CEATMA1 more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: SOT-223-4

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 600 V

Id - Continuous Drain Current:: 2.6 A

Rds On - Drain-Source Resistance:: 7.96 Ohms

Vgs th - Gate-Source Threshold Voltage:: 2.5 V

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 4.6 nC

Minimum Operating Temperature:: - 40 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 5 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: CoolMOS

Packaging:: Reel

Height:: 1.6 mm

Length:: 6.5 mm

Series:: CoolMOS CE

Transistor Type:: 1 N-Channel

Width:: 3.5 mm

Brand:: Infineon Technologies

Fall Time:: 60 ns

Product Type:: MOSFET

Rise Time:: 10 ns

Factory Pack Quantity:: 3000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 40 ns

Typical Turn-On Delay Time:: 8 ns

Part # Aliases:: IPN60R3K4CE SP001434888

Unit Weight:: 0.003951 oz

Tags: IPN60R3, IPN60, IPN6, IPN

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPN60R3K4CEATMA1 Description

***ure Electronics: Single N-Channel 600 V 3.4 Ohm 4.6 nC CoolMOS Power Mosfet - SOT-223

***ark: Mosfet, N-Ch, 600V, 2.6A, Sot-223-3 Rohs Compliant: Yes

***ineon SCT: Cost-effective drop-in replacement for DPAK, PG-SOT223-4-3, RoHS

***ineon: Cost-effective drop-in replacement for DPAK | Summary of Features: Drop-in replacement for DPAK at lower cost; Space savings in designs with low power dissipation; Comparable thermal behavior to DPAK | Target Applications: Lighting; Adapter; Consumer

IPN60R3K4CEATMA1 More Information

CoolMOS™ Power Transistors: Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.

CoolMOS™ CE Power MOSFETs: Infineon's CoolMOS™ CE Power MOSFETs are a technology platform of high voltage power MOSFETs that are designed according to the superjunction principle (SJ) and conceived to fulfill consumer requirements. CoolMOS™ CE portfolio offers 500V, 600V, 650V, 700V, and 800V devices targeting low power chargers for mobile devices and power tools, adapters for notebook and laptops, LCD, LED TV and LED lighting. This new series of CoolMOS™ is cost optimized to meet typical requirements in consumer with no compromise on proven CoolMOS™ quality and reliability while still being price attractive.

CoolMOS CE Power MOSFETs - 600-650V: Infineon 600V/650V CoolMOS™ CE N-Channel Power MOSFETs are a technology platform of Infineon's market leading high voltage power MOSFET designed according to the superjunction principle (SJ) and conceived to fulfill consumer requirements. These 600V/650V CoolMOS™ MOSFETs are cost optimized to meet typical requirements in consumer with no compromise on proven CoolMOS™ quality and reliability while still been price attractive. These devices target low power chargers for mobile devices and power tools, LCD, LED TV and LED lighting applications.

Market price

Part #	Mfg.	Description	Stock	Price
IPN60R3K4CEATMA1 DISTI # V72:2272_14663637	Infineon Technologies AG	Trans MOSFET N-CH 600V 2.6A 3-Pin SOT-223 T/R RoHS: Compliant	1268	1000:$0.1500 500:$0.1631 250:$0.1813 100:$0.2014 25:$0.3263 10:$0.3626 1:$0.4284
IPN60R3K4CEATMA1 DISTI # V36:1790_14663637	Infineon Technologies AG	Trans MOSFET N-CH 600V 2.6A 3-Pin SOT-223 T/R RoHS: Compliant	0	3000000:$0.1117 1500000:$0.1119 300000:$0.1271 30000:$0.1520 3000:$0.1561
IPN60R3K4CEATMA1 DISTI # IPN60R3K4CEATMA1CT-ND	Infineon Technologies AG	MOSFET NCH 600V 2.6A SOT223 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	7834In Stock	1000:$0.1763 500:$0.2282 100:$0.2904 10:$0.3890 1:$0.4500
IPN60R3K4CEATMA1 DISTI # IPN60R3K4CEATMA1DKR-ND	Infineon Technologies AG	MOSFET NCH 600V 2.6A SOT223 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	7834In Stock	1000:$0.1763 500:$0.2282 100:$0.2904 10:$0.3890 1:$0.4500
IPN60R3K4CEATMA1 DISTI # IPN60R3K4CEATMA1TR-ND	Infineon Technologies AG	MOSFET NCH 600V 2.6A SOT223 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	6000In Stock	75000:$0.1275 30000:$0.1289 15000:$0.1359 6000:$0.1460 3000:$0.1561
IPN60R3K4CEATMA1 DISTI # 27619650	Infineon Technologies AG	Trans MOSFET N-CH 600V 2.6A 3-Pin SOT-223 T/R RoHS: Compliant	1268	53:$0.4284
IPN60R3K4CEATMA1 DISTI # IPN60R3K4CEATMA1	Infineon Technologies AG	Trans MOSFET N-CH 650V 3.9A 3-Pin SOT-223 - Tape and Reel (Alt: IPN60R3K4CEATMA1) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.1209 18000:$0.1239 12000:$0.1279 6000:$0.1329 3000:$0.1379
IPN60R3K4CEATMA1 DISTI # SP001434888	Infineon Technologies AG	Trans MOSFET N-CH 650V 3.9A 3-Pin SOT-223 (Alt: SP001434888) RoHS: Compliant Min Qty: 3000	Europe - 0	30000:€0.1139 18000:€0.1219 12000:€0.1449 6000:€0.1769 3000:€0.2279
IPN60R3K4CEATMA1 DISTI # 97Y1835	Infineon Technologies AG	MOSFET, N-CH, 600V, 2.6A, SOT-223-3,Transistor Polarity:N Channel,Continuous Drain Current Id:2.6A,Drain Source Voltage Vds:600V,On Resistance Rds(on):3.06ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes	2951	1000:$0.1660 500:$0.1820 250:$0.1980 100:$0.2140 50:$0.2600 25:$0.3050 10:$0.3500 1:$0.4140
IPN60R3K4CEATMA1 DISTI # 726-IPN60R3K4CEATMA1	Infineon Technologies AG	MOSFET CONSUMER RoHS: Compliant	15216	1:$0.4100 10:$0.3470 100:$0.2120 1000:$0.1640 3000:$0.1400
IPN60R3K4CEATMA1 DISTI # 1300920P	Infineon Technologies AG	MOSFET N-CH 600V 3.9A COOLMOS CE SOT-223, RL	5800	2500:£0.1200 1000:£0.1390 500:£0.1580 125:£0.1840
IPN60R3K4CEATMA1 DISTI # 2617450	Infineon Technologies AG	MOSFET, N-CH, 600V, 2.6A, SOT-223-3 RoHS: Compliant	2931	1000:$0.2640 500:$0.3420 100:$0.4350 10:$0.5820 1:$0.6700
IPN60R3K4CEATMA1 DISTI # 2617450	Infineon Technologies AG	MOSFET, N-CH, 600V, 2.6A, SOT-223-3	5506	500:£0.1280 250:£0.1460 100:£0.1650 25:£0.2930 5:£0.3070

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Availability

Stock:: 11
On Order:: 1994
Enter Quantity:

Current price of IPN60R3K4CEATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$0.41~~; ~~$0.41~~

10: ~~$0.35~~; ~~$3.47~~

100: ~~$0.21~~; ~~$21.20~~

1000: ~~$0.16~~; ~~$164.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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IPN60R3K4CEATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes