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IPB80N03S4L03ATMA1

IPB80N03S4L03ATMA1
Mfr. #:
IPB80N03S4L03ATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 30V 80A D2PAK-2 OptiMOS-T2
Lifecycle:
New from this manufacturer.
Datasheet:
IPB80N03S4L03ATMA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IPB80N03S4L03ATMA1 DatasheetIPB80N03S4L03ATMA1 Datasheet (P4-P6)IPB80N03S4L03ATMA1 Datasheet (P7-P9)
ECAD Model:
More Information:
IPB80N03S4L03ATMA1 more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-263-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
30 V
Id - Continuous Drain Current:
80 A
Rds On - Drain-Source Resistance:
2 mOhms
Vgs th - Gate-Source Threshold Voltage:
1 V
Vgs - Gate-Source Voltage:
16 V
Qg - Gate Charge:
140 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
136 W
Configuration:
Single
Channel Mode:
Enhancement
Qualification:
AEC-Q101
Packaging:
Reel
Height:
4.4 mm
Length:
10 mm
Series:
XPB80N03
Transistor Type:
1 N-Channel
Width:
9.25 mm
Brand:
Infineon Technologies
Fall Time:
13 ns
Product Type:
MOSFET
Rise Time:
9 ns
Factory Pack Quantity:
1000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
62 ns
Typical Turn-On Delay Time:
14 ns
Part # Aliases:
IPB80N03S4L-03 IPB8N3S4L3XT SP000274982
Unit Weight:
0.139332 oz
Tags
IPB80N03S4L0, IPB80N03S, IPB80N03, IPB80N0, IPB80N, IPB8, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 20, N-Channel MOSFET, 80 A, 30 V, 3-Pin D2PAK Infineon IPB80N03S4L03ATMA1
***ical
Trans MOSFET N-CH 30V 80A 3-Pin(2+Tab) TO-263
***et Europe
Trans MOSFET N-CH 30V 80A 3-Pin TO-263 T/R
***ronik
MOSFET 30V 3.4mOHM AECQ TO263
***i-Key
MOSFET N-CH 30V 80A TO263-3
***ark
Mosfet, N-Ch, Aec-Q101, 30V, 80A, To-263; Transistor Polarity:n Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.003Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, AEC-Q101, 30V, 80A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.003ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Power Dissipation Pd:94W; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:OptiMOS T2 Series; Automotive Qualification Standard:AEC-Q101; MSL:-; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CANALE N AEC-Q101 30V 80A TO-263; Polarità Transistor:Canale N; Corrente Continua di Drain Id:80A; Tensione Drain Source Vds:30V; Resistenza di Attivazione Rds(on):0.003ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:1.6V; Dissipazione di Potenza Pd:94W; Modello Case Transistor:TO-263; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:OptiMOS T2 Series; Standard di Qualifica Automotive:AEC-Q101; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green product (RoHS compliant); 100% Avalanche tested | Benefits: world's lowest RDS at 30V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: OptiMOS-T2 30V addresses all kind of EPS motor control, 3-phase and H-bridge motors, HVAC fan control, electric pumps, etc. especially in combination with PWM control.; Thus OptiMOS-T2 30V products based on Infineons advanced trench technology will be the benchmark for next generation of automotive applications in energy efficiency, CO2 reduction, e-drives.
20V to 40V N-Channel Automotive MOSFETs
Infineon Technologies 20V to 40V N-Channel Automotive MOSFETs are AEC-Q101 qualified for automotive applications, and available in a wide range of package types, including D-PAK, TOLL (HSOF-8),  TOLG (HSOG-8), and SSO8 (TDSON-8). These MOSFETs address broad range of applications, including EPS motor control, 3-phase and H-bridge motors, HVAC fan control, and electric pumps in combination with PWM control.
Part # Mfg. Description Stock Price
IPB80N03S4L03ATMA1
DISTI # V72:2272_06384649		Infineon Technologies AGTrans MOSFET N-CH 30V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		850
  • 500:$0.8349
  • 250:$0.8491
  • 100:$0.9434
  • 25:$1.1967
  • 10:$1.2095
  • 1:$1.5683
IPB80N03S4L03ATMA1
DISTI # V36:1790_06384649		Infineon Technologies AGTrans MOSFET N-CH 30V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		0
  • 1000000:$0.5136
  • 500000:$0.5140
  • 100000:$0.5681
  • 10000:$0.6757
  • 1000:$0.6944
IPB80N03S4L03ATMA1
DISTI # IPB80N03S4L03ATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 30V 80A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		669In Stock
  • 500:$0.9060
  • 100:$1.0967
  • 10:$1.4070
  • 1:$1.5700
IPB80N03S4L03ATMA1
DISTI # IPB80N03S4L03ATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 30V 80A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		669In Stock
  • 500:$0.9060
  • 100:$1.0967
  • 10:$1.4070
  • 1:$1.5700
IPB80N03S4L03ATMA1
DISTI # IPB80N03S4L03ATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 30V 80A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 10000:$0.5926
  • 5000:$0.6157
  • 2000:$0.6481
  • 1000:$0.6944
IPB80N03S4L03ATMA1
DISTI # 33642556		Infineon Technologies AGTrans MOSFET N-CH 30V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		5000
  • 1000:$0.7098
IPB80N03S4L03ATMA1
DISTI # 32404270		Infineon Technologies AGTrans MOSFET N-CH 30V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		850
  • 12:$1.5683
IPB80N03S4L03ATMA1
DISTI # IPB80N03S4L03ATMA1		Infineon Technologies AGTrans MOSFET N-CH 30V 80A 3-Pin(2+Tab) TO-263 - Bulk (Alt: IPB80N03S4L03ATMA1)
RoHS: Compliant
Min Qty: 642
Container: Bulk		Americas - 0
  • 6420:$0.4949
  • 3210:$0.5039
  • 1926:$0.5219
  • 1284:$0.5409
  • 642:$0.5609
IPB80N03S4L03ATMA1
DISTI # IPB80N03S4L-03ATMA1		Infineon Technologies AGTrans MOSFET N-CH 30V 80A 3-Pin(2+Tab) TO-263 - Bulk (Alt: IPB80N03S4L-03ATMA1)
RoHS: Compliant
Min Qty: 658
Container: Bulk		Americas - 0
  • 6580:$0.4819
  • 3290:$0.4909
  • 1974:$0.5079
  • 1316:$0.5269
  • 658:$0.5469
IPB80N03S4L03ATMA1
DISTI # IPB80N03S4L03ATMA1		Infineon Technologies AGTrans MOSFET N-CH 30V 80A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB80N03S4L03ATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 10000:$0.5599
  • 6000:$0.5699
  • 4000:$0.5899
  • 2000:$0.6119
  • 1000:$0.6349
IPB80N03S4L03ATMA1
DISTI # SP000274982		Infineon Technologies AGTrans MOSFET N-CH 30V 80A 3-Pin(2+Tab) TO-263 (Alt: SP000274982)
RoHS: Compliant
Min Qty: 1000		Europe - 0
  • 10000:€0.5589
  • 6000:€0.5969
  • 4000:€0.6559
  • 2000:€0.7339
  • 1000:€0.9409
IPB80N03S4L03ATMA1
DISTI # 49AC0285		Infineon Technologies AGMOSFET, N-CH, AEC-Q101, 30V, 80A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:80A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.003ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.6V,Power RoHS Compliant: Yes935
  • 500:$0.8460
  • 250:$0.9020
  • 100:$0.9570
  • 50:$1.0500
  • 25:$1.1500
  • 10:$1.2400
  • 1:$1.4500
IPB80N03S4L-03
DISTI # 726-IPB80N03S4L-03		Infineon Technologies AGMOSFET N-Ch 30V 80A D2PAK-2 OptiMOS-T2
RoHS: Compliant		322
  • 1:$1.4400
  • 10:$1.2300
  • 100:$0.9480
  • 500:$0.8380
  • 1000:$0.6620
  • 2000:$0.5870
  • 10000:$0.5650
IPB80N03S4L03ATMA1
DISTI # 726-IPB80N03S4L03ATM		Infineon Technologies AGMOSFET N-Ch 30V 80A D2PAK-2 OptiMOS-T2
RoHS: Compliant		925
  • 1:$1.4400
  • 10:$1.2300
  • 100:$0.9480
  • 500:$0.8380
  • 1000:$0.6620
  • 2000:$0.5870
  • 10000:$0.5650
IPB80N03S4L03ATMA1Infineon Technologies AGPower Field-Effect Transistor, 80A I(D), 30V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Compliant		2749
  • 1000:$0.5100
  • 500:$0.5400
  • 100:$0.5600
  • 25:$0.5900
  • 1:$0.6300
IPB80N03S4L-03ATMA1Infineon Technologies AGPower Field-Effect Transistor, 80A I(D), 30V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Not Compliant		8000
  • 1000:$0.5000
  • 500:$0.5300
  • 100:$0.5500
  • 25:$0.5700
  • 1:$0.6200
IPB80N03S4L03ATMA1
DISTI # 8922191P		Infineon Technologies AGMOSFET N-CHANNEL 30V 80A OPTIMOS TO263, RL640
  • 2000:£0.5690
  • 500:£0.6570
  • 200:£0.7440
IPB80N03S4L03ATMA1
DISTI # 2839453		Infineon Technologies AGMOSFET, N-CH, AEC-Q101, 30V, 80A, TO-263
RoHS: Compliant		935
  • 5000:$0.8770
  • 1000:$0.9290
  • 500:$0.9740
  • 250:$1.1300
  • 100:$1.3400
  • 25:$1.6400
  • 5:$1.8900
IPB80N03S4L03ATMA1
DISTI # 2839453		Infineon Technologies AGMOSFET, N-CH, AEC-Q101, 30V, 80A, TO-263900
  • 500:£0.6460
  • 250:£0.6880
  • 100:£0.7300
  • 10:£0.9970
  • 1:£1.2600
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Availability
Stock:
925
On Order:
2908
Enter Quantity:
Current price of IPB80N03S4L03ATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$1.44
$1.44
10
$1.23
$12.30
100
$0.95
$94.80
500
$0.84
$419.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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