IPB80N03S4L03ATMA1

P1-P3 P4-P6 P7-P9

IPB80N03S4L-03

IPI80N03S4L-04, IPP80N03S4L-04

OptiMOS

®

-T2 Power-Transistor

Features

• N-channel - Enhancement mode

• Automotive AEC Q101 qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green product (RoHS compliant)

• 100% Avalanche tested

Maximum ratings, at T

j

=25 °C, unless otherwise specified

Parameter Symbol Conditions Unit

Continuous drain current

1)

I

D

T

C

=25 °C, V

GS

=10 V

80 A

T

C

=100 °C,

V

GS

=10 V

2)

80

Pulsed drain current

2)

I

D,pulse

T

C

=25 °C

320

Avalanche energy, single pulse

E

AS

I

D

=80 A

95 mJ

Avalanche current, single pulse

I

AS

T

C

=25 °C

80 A

Gate source voltage

V

GS

- ±16 V

Power dissipation

P

tot

T

C

=25 °C

94 W

Operating and storage temperature

T

j

, T

stg

- -55 ... +175 °C

IEC climatic category; DIN IEC 68-1 - - 55/175/56

Value

V

DS

30 V

R

DS(on),max

(SMD version) 3.4

mΩ

I

D

80 A

Product Summary

Type Package Marking

IPB80N03S4L-03 PG-TO263-3-2 4N03L03

IPI80N03S4L-04 PG-TO262-3-1 4N03L04

IPP80N03S4L-04 PG-TO220-3-1 4N03L04

PG-TO220-3-1PG-TO262-3-1PG-TO263-3-2

Rev. 2.1 page 1 2010-03-08

IPB80N03S4L-03

IPI80N03S4L-04, IPP80N03S4L-04

Parameter Symbol Conditions Unit

min. typ. max.

Thermal characteristics

2)

Thermal resistance, junction - case

R

thJC

- - - 1.6 K/W

Thermal resistance, junction -

ambient, leaded

R

thJA

---62

SMD version, device on PCB

R

thJA

minimal footprint - - 62

6 cm

2

cooling area

3)

--40

Electrical characteristics, at T

j

=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V

(BR)DSS

V

GS

=0 V, I

D

= 1 mA

30 - - V

Gate threshold voltage

V

GS(th)

V

DS

=V

GS

, I

D

=45 µA

1.0 1.6 2.2

Zero gate voltage drain current

I

DSS

V

DS

=30 V, V

GS

=0 V,

T

j

=25 °C

- 0.01 1 µA

V

DS

=30 V, V

GS

=0 V,

T

j

=125 °C

2)

- 10 1000

V

DS

=18 V, V

GS

=0 V,

T

j

=85 °C

2)

-560

Gate-source leakage current

I

GSS

V

GS

=16 V, V

DS

=0 V

- 1 100 nA

Drain-source on-state resistance

R

DS(on)

V

GS

=4.5 V, I

D

=40 A

- 3.9 5

mΩ

V

GS

=4.5 V, I

D

=40 A,

SMD version

- 3.6 4.7

V

GS

=10 V, I

D

=80 A

- 3.0 3.7

V

GS

=10 V, I

D

=80 A,

SMD version

- 2.7 3.4

Values

Rev. 2.1 page 2 2010-03-08

IPB80N03S4L-03

IPI80N03S4L-04, IPP80N03S4L-04

Parameter Symbol Conditions Unit

min. typ. max.

D

y

namic characteristics

2)

Input capacitance

C

iss

- 4000 5100 pF

Output capacitance

C

oss

- 1000 1300

Reverse transfer capacitance

C

rss

- 53 100

Turn-on delay time

t

d(on)

-9-ns

Rise time

t

r

-6-

Turn-off delay time

t

d(off)

-37-

Fall time

t

f

-7-

Gate Char

g

e Characteristics

2)

Gate to source charge

Q

gs

-1215nC

Gate to drain charge

Q

gd

-816

Gate charge total

Q

g

-6075

Gate plateau voltage

V

plateau

- 3.1 - V

Reverse Diode

Diode continous forward current

2)

I

S

- - 80 A

Diode pulse current

2)

I

S,pulse

- - 320

Diode forward voltage

V

SD

V

GS

=0 V, I

F

=80 A,

T

j

=25 °C

0.6 0.9 1.3 V

Reverse recovery time

2)

t

rr

V

R

=15 V, I

F

=I

S

,

di

F

/dt =100 A/µs

-60-ns

Reverse recovery charge

2)

Q

rr

-50-nC

T

C

=25 °C

Values

V

GS

=0 V, V

DS

=25 V,

f =1 MHz

V

DD

=15 V, V

GS

=10 V,

I

D

=80 A, R

G

=3.5 Ω

V

DD

=24 V, I

D

=80 A,

V

GS

=0 to 10 V

2)

Defined by design. Not subject to production test.

3)

Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm

2

(one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

1)

Current is limited by bondwire; with an R

thJC

= 1.6K/W the chip is able to carry 128A at 25°C.

Rev. 2.1 page 3 2010-03-08

P1-P3 P4-P6 P7-P9

IPB80N03S4L03ATMA1

Mfr. #:

Buy IPB80N03S4L03ATMA1

Manufacturer:

Infineon Technologies

Description:

MOSFET N-Ch 30V 80A D2PAK-2 OptiMOS-T2

Lifecycle:

New from this manufacturer.

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