IPB60R950C6ATMA1

Mfr. #:: IPB60R950C6ATMA1
Manufacturer:: Infineon Technologies
Description:: MOSFET LOW POWER_LEGACY
Lifecycle:: New from this manufacturer.
Datasheet:: IPB60R950C6ATMA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: TO-263-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Configuration:: Single

Tradename:: CoolMOS

Packaging:: Reel

Height:: 4.4 mm

Length:: 10 mm

Transistor Type:: 1 N-Channel

Width:: 9.25 mm

Brand:: Infineon Technologies

Product Type:: MOSFET

Subcategory:: MOSFETs

Part # Aliases:: IPB60R950C6ATMA1 SP000660620

Unit Weight:: 0.139332 oz

Tags: IPB60R, IPB60, IPB6, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB60R950C6ATMA1 Description

***ical: TransMOSFETNCH600V44A4Pin3TabTO263

***ineonSCT: CoolMOSC6combinesInfineonsexperienceastheleadingsuperjunctionMOSFETsupplierwithbestinclassinnovationPGTO2633RoHS

***ment14APAC: MOSFETNCH600V44ATO263;TransistorPolarityNChannel;ContinuousDrainCurrentId44A;DrainSourceVoltageVds600V;OnResistanceRdson086ohm;RdsonTestVoltageVgs10V;ThresholdVoltageVgsTyp3V;PowerDissipationPd37W;OperatingTemperatureRange55Cto150C;TransistorCaseStyleTO263;NoofPins2;SVHCNoSVHC20Jun2011;CurrentIdMax44A;PowerDissipationPd37W;VoltageVgsMax30V

***ineon: CoolMOSC6combinesInfineonsexperienceastheleadingsuperjunctionMOSFETsupplierwithbestinclassinnovationTheC6devicesprovideallbenefitsofafastswitchingSJMOSFETwhilenotsacrificingeaseofuseExtremelylowswitchingandconductionlossesmakeswitchingapplicationsevenmoreefficientcompactlighterandcoolerSummaryofFeaturesEasycontrolofswitchingbehavior;ExtremelylowlossesduetoverylowFigureofMeritRDSonQgandEoss;Veryhighcommutationruggedness;Easytouse;BetterlightloadefficiencycomparedtoC3;OutstandingreliabilitywithprovenCoolMOSqualitycombinedwithhighbodydioderuggedness;BetterpriceperformanceincomparisontopreviousCoolMOSgenerations;MoreefficientmorecompactlighterandcoolerBenefitsImprovedpowerdensity;Improvedreliability;Generalpurposepartcanbeusedinbothsoftandhardswitchingtopologies;Betterlightloadeffciency;Improvedeffciencyinhardswitchingapplications;Improvedeaseofuse;ReducespossibleringingduetopcblayoutandpackageparasiticeffectsTargetApplicationsConsumer;Adapter;eMobility;PFCstagesforserver&telecom;SMPS;PCpower;Solar;Lighting

Market price

Part #	Mfg.	Description	Stock	Price
IPB60R950C6ATMA1 DISTI # IPB60R950C6ATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 600V 4.4A TO263 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Limited Supply - Call
IPB60R950C6ATMA1 DISTI # IPB60R950C6ATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 600V 4.4A TO263 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
IPB60R950C6ATMA1 DISTI # IPB60R950C6ATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 600V 4.4A TO263 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
IPB60R950C6ATMA1 DISTI # IPB60R950C6ATMA1	Infineon Technologies AG	Trans MOSFET N-CH 600V 4.4A 4-Pin(3+Tab) TO-263 - Bulk (Alt: IPB60R950C6ATMA1) Min Qty: 625 Container: Bulk	Americas - 0	6250:$0.5079 3125:$0.5169 1875:$0.5349 1250:$0.5549 625:$0.5759
IPB60R950C6ATMA1 DISTI # 30T1834	Infineon Technologies AG	MOSFET, N CH, 650V, 4.4A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:4.4A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.86ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Product Range:- RoHS Compliant: Yes	0
IPB60R950C6ATMA1 DISTI # N/A	Infineon Technologies AG	MOSFET LOW POWER_LEGACY	0
IPB60R950C6 DISTI # 726-IPB60R950C6	Infineon Technologies AG	MOSFET N-Ch 650V 4.4A D2PAK-2 CoolMOS C6 RoHS: Compliant	0	1:$1.2600 10:$1.0800 100:$0.8250 500:$0.7290 1000:$0.5750
IPB60R950C6ATMA1	Infineon Technologies AG	Power Field-Effect Transistor, 4.4A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant	4	1000:$0.5300 500:$0.5500 100:$0.5800 25:$0.6000 1:$0.6500
IPB60R950C6ATMA1 DISTI # 8269500P	Infineon Technologies AG	MOSFET N-CH 4.4A 600V COOLMOS C6 TO263-4, RL	5000	500:£0.6780 200:£0.6980
IPB60R950C6ATMA1 DISTI # 1860809	Infineon Technologies AG	MOSFET,N CH,600V,4.4A,TO263 RoHS: Compliant	0	1000:$0.8670 500:$1.1000 100:$1.2400 10:$1.6300 1:$1.9000

IPB60R950C6ATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes