SIA414DJ-T1-GE3

SIA414DJ-T1-GE3
Mfr. #:
SIA414DJ-T1-GE3
Manufacturer:
Vishay
Description:
MOSFET N-CH 8V 12A SC70-6
Lifecycle:
New from this manufacturer.
Datasheet:
SIA414DJ-T1-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIA414DJ-T1-GE3 DatasheetSIA414DJ-T1-GE3 Datasheet (P4-P6)SIA414DJ-T1-GE3 Datasheet (P7-P9)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer
Vishay Siliconix
Product Category
FETs - Single
Series
TrenchFETR
Packaging
Digi-ReelR Alternate Packaging
Part-Aliases
SIA414DJ-GE3
Mounting-Style
SMD/SMT
Package-Case
PowerPAKR SC-70-6
Technology
Si
Operating-Temperature
-55°C ~ 150°C (TJ)
Mounting-Type
Surface Mount
Number-of-Channels
1 Channel
Supplier-Device-Package
PowerPAKR SC-70-6 Single
Configuration
Single
FET-Type
MOSFET N-Channel, Metal Oxide
Power-Max
19W
Transistor-Type
1 N-Channel
Drain-to-Source-Voltage-Vdss
8V
Input-Capacitance-Ciss-Vds
1800pF @ 4V
FET-Feature
Standard
Current-Continuous-Drain-Id-25°C
12A (Tc)
Rds-On-Max-Id-Vgs
11 mOhm @ 9.7A, 4.5V
Vgs-th-Max-Id
800mV @ 250μA
Gate-Charge-Qg-Vgs
32nC @ 5V
Pd-Power-Dissipation
3.5 W
Maximum-Operating-Temperature
+ 150 C
Minimum-Operating-Temperature
- 55 C
Fall-Time
20 ns
Rise-Time
10 ns
Vgs-Gate-Source-Voltage
5 V
Id-Continuous-Drain-Current
12 A
Vds-Drain-Source-Breakdown-Voltage
8 V
Rds-On-Drain-Source-Resistance
11 mOhms
Transistor-Polarity
N-Channel
Typical-Turn-Off-Delay-Time
65 ns
Typical-Turn-On-Delay-Time
12 ns
Forward-Transconductance-Min
50 S
Channel-Mode
Enhancement
Tags
SIA414DJ-T, SIA414D, SIA414, SIA41, SIA4, SIA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N Channel 8 V 0.041 O 19 W 32 nC Surface Mount Power MosFet - PPAK-SC-70-6
***et
Trans MOSFET N-CH 8V 12A 6-Pin PowerPAK SC-70 T/R
***ark
N-Channel 8-V (D-S) Mosfet Rohs Compliant: No
***ment14 APAC
MOSFET,N CH,8V,12A,SC70-6; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:8V; On Resistance Rds(on):9mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:800mV; Power Dissipation Pd:3.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SC-70; No. of Pins:6; Current Id Max:12A; Power Dissipation Pd:3.5W; Voltage Vgs Max:5V
Part # Mfg. Description Stock Price
SIA414DJ-T1-GE3
DISTI # V72:2272_09216826
Vishay IntertechnologiesTrans MOSFET N-CH 8V 12A 6-Pin PowerPAK SC-70 T/R
RoHS: Compliant
46
  • 25:$0.4167
  • 10:$0.7788
  • 1:$0.8567
SIA414DJ-T1-GE3
DISTI # SIA414DJ-T1-GE3CT-ND
Vishay SiliconixMOSFET N-CH 8V 12A SC70-6
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
6211In Stock
  • 1000:$0.4589
  • 500:$0.5812
  • 100:$0.7495
  • 10:$0.9480
  • 1:$1.0700
SIA414DJ-T1-GE3
DISTI # SIA414DJ-T1-GE3DKR-ND
Vishay SiliconixMOSFET N-CH 8V 12A SC70-6
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
6211In Stock
  • 1000:$0.4589
  • 500:$0.5812
  • 100:$0.7495
  • 10:$0.9480
  • 1:$1.0700
SIA414DJ-T1-GE3
DISTI # SIA414DJ-T1-GE3TR-ND
Vishay SiliconixMOSFET N-CH 8V 12A SC70-6
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
6000In Stock
  • 3000:$0.4158
SIA414DJ-T1-GE3
DISTI # C1S803601323334
Vishay IntertechnologiesTrans MOSFET N-CH 8V 12A 6-Pin PowerPAK SC-70 T/R
RoHS: Compliant
46
  • 25:$0.4167
  • 10:$0.7788
SIA414DJ-T1-GE3
DISTI # 25790297
Vishay IntertechnologiesTrans MOSFET N-CH 8V 12A 6-Pin PowerPAK SC-70 T/R
RoHS: Compliant
46
  • 25:$0.4167
  • 19:$0.7788
SIA414DJ-T1-GE3
DISTI # SIA414DJ-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 8V 12A 6-Pin PowerPAK SC-70 T/R (Alt: SIA414DJ-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Asia - 0
  • 3000:$0.3825
  • 6000:$0.2943
  • 9000:$0.2342
  • 15000:$0.1979
  • 30000:$0.1822
  • 75000:$0.1766
  • 150000:$0.1713
SIA414DJ-T1-GE3
DISTI # SIA414DJ-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 8V 12A 6-Pin PowerPAK SC-70 T/R - Tape and Reel (Alt: SIA414DJ-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 3000:$0.3929
  • 6000:$0.3809
  • 12000:$0.3649
  • 18000:$0.3549
  • 30000:$0.3459
SIA414DJ-T1-GE3
DISTI # 85W0169
Vishay IntertechnologiesN CHANNEL MOSFET, 8V, 12A, SC-70, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:12A,Drain Source Voltage Vds:8V,On Resistance Rds(on):0.009ohm,Rds(on) Test Voltage Vgs:5V,Threshold Voltage Vgs:800mV , RoHS Compliant: Yes0
  • 1:$0.4000
  • 3000:$0.3970
  • 6000:$0.3780
  • 12000:$0.3350
SIA414DJ-T1-GE3
DISTI # 16P3612
Vishay IntertechnologiesN CHANNEL MOSFET, 8V, 12A, SC-70,Transistor Polarity:N Channel,Continuous Drain Current Id:12A,Drain Source Voltage Vds:8V,On Resistance Rds(on):0.009ohm,Rds(on) Test Voltage Vgs:5V,Threshold Voltage Vgs:800mV,Product Range:- , RoHS Compliant: Yes0
  • 1:$0.9500
  • 25:$0.7780
  • 50:$0.6880
  • 100:$0.5970
  • 250:$0.5560
  • 500:$0.5140
  • 1000:$0.4050
SIA414DJ-T1-GE3
DISTI # 781-SIA414DJ-T1-GE3
Vishay IntertechnologiesMOSFET 8.0V 12A 19W 11mohm @ 4.5V
RoHS: Compliant
0
  • 1:$0.9500
  • 10:$0.7780
  • 100:$0.5970
  • 500:$0.5140
  • 1000:$0.4050
  • 3000:$0.3780
SIA414DJ-T1-GE3Vishay Semiconductors12A, 8V, 0.011OHM, N-CHANNEL, SI, POWER, MOSFET6495
  • 5683:$0.2520
  • 2668:$0.2640
  • 1:$0.9600
SIA414DJ-T1-GE3Vishay Siliconix12A, 8V, 0.011OHM, N-CHANNEL, SI, POWER, MOSFET3234
  • 2668:$0.2640
  • 596:$0.3000
  • 1:$0.9600
SIA414DJ-T1-GE3Vishay Dale12A, 8V, 0.011OHM, N-CHANNEL, SI, POWER, MOSFET2930
  • 2668:$0.2640
  • 596:$0.3000
  • 1:$0.9600
SIA414DJ-T1-GE3Vishay IntertechnologiesMOSFET 8.0V 12A 19W 11mohm @ 4.5V
RoHS: Compliant
Americas -
    SIA414DJ-T1-GE3
    DISTI # 1838996
    Vishay IntertechnologiesMOSFET,N CH,8V,12A,SC70-6
    RoHS: Compliant
    0
    • 10:$1.5000
    • 50:$1.2100
    • 100:$0.9650
    • 500:$0.8370
    • 1000:$0.7240
    • 2500:$0.6720
    Image Part # Description
    SIA414DJ-T1-GE3-CUT TAPE

    Mfr.#: SIA414DJ-T1-GE3-CUT TAPE

    OMO.#: OMO-SIA414DJ-T1-GE3-CUT-TAPE-1190

    New and Original
    SIA414DJ

    Mfr.#: SIA414DJ

    OMO.#: OMO-SIA414DJ-1190

    New and Original
    SIA414DJ-T1-GE3

    Mfr.#: SIA414DJ-T1-GE3

    OMO.#: OMO-SIA414DJ-T1-GE3-VISHAY

    MOSFET N-CH 8V 12A SC70-6
    SIA414DJ-TI-E3

    Mfr.#: SIA414DJ-TI-E3

    OMO.#: OMO-SIA414DJ-TI-E3-1190

    New and Original
    Availability
    Stock:
    Available
    On Order:
    2000
    Enter Quantity:
    Current price of SIA414DJ-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $0.38
    $0.38
    10
    $0.36
    $3.59
    100
    $0.34
    $34.02
    500
    $0.32
    $160.65
    1000
    $0.30
    $302.40
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
    Start with
    Top