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FDB5680

FDB5680
Mfr. #:
FDB5680
Manufacturer:
Rochester Electronics, LLC
Description:
Power Field-Effect Transistor, 40A I(D), 60V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Lifecycle:
New from this manufacturer.
Datasheet:
FDB5680 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer
FAIRCHILD
Product Category
IC Chips
Tags
FDB568, FDB56, FDB5, FDB
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ser
Not available to order USE 512-FDB20AN06A0
***i-Key
N-CHANNEL POWER MOSFET
***el Nordic
Contact for details
***emi
N-Channel PowerTrench® SyncFET™ 30V, 42A, 3mΩ
***r Electronics
Power Field-Effect Transistor, 113A I(D), 30V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***nell
MOSFET, N CH, 30V, 42A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:42A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0024ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.6V; Power Dissipation Pd:65W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***rchild Semiconductor
The FDMS7670AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
***ure Electronics
Single N-Channel 60 V 15.8 mOhm 22 nC HEXFET® Power Mosfet - TO-252AA
***(Formerly Allied Electronics)
MOSFET, Power,N-Ch,VDSS 60V,RDS(ON) 12.6 Milliohms,ID 43A,D-Pak,PD 71W,VGS+/-20V
***ineon
Benefits: RoHS Compliant | Target Applications: AC-DC; Battery Operated Drive
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:43A; On Resistance Rds(On):0.0126Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V Rohs Compliant: Yes
***roFlash
Power Field-Effect Transistor, 43A I(D), 60V, 0.0158ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 11.1 Milliohms;ID 51A;TO-220AB;PD 80W;-55deg
***ure Electronics
Single N-Channel 55 V 13.9 mOhm 29 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***p One Stop
Trans MOSFET N-CH Si 55V 51A 3-Pin(3+Tab) TO-220AB Tube
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 80 W
***ment14 APAC
MOSFET, N, 55V, 51A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:51A; Drain Source Voltage Vds:55V; On Resistance Rds(on):13.9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:80W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:51A; Junction to Case Thermal Resistance A:1.87°C/W; On State resistance @ Vgs = 10V:13.9ohm; Package / Case:TO-220AB; Power Dissipation Pd:80W; Power Dissipation Pd:80W; Pulse Current Idm:200A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***ure Electronics
Single N-Channel 60 V 15.8 mOhm 22 nC HEXFET® Power Mosfet - TO-220-3
***klin Elektronik
INFINEON THT MOSFET NFET 60V 43A 15,8mΩ 175°C TO-220 IRFB3806PBF
*** Source Electronics
Trans MOSFET N-CH 60V 43A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 60V 43A TO-220AB
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***(Formerly Allied Electronics)
MOSFET, 60V, 43A, 16.2 MOHM, 22 NC QG, TO-220AB
***ineon
Benefits: RoHS Compliant | Target Applications: AC-DC; Battery Operated Drive
***ment14 APAC
MOSFET, N, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:43A; Drain Source Voltage Vds:60V; On Resistance Rds(on):12.6mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:71W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:43A; Package / Case:TO-220AB; Power Dissipation Pd:71W; Pulse Current Idm:170A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***emi
Single N-Channel Logic Level Power MOSFET 60V, 46A, 16mΩ
***(Formerly Allied Electronics)
NTD5865NLT4G N-channel MOSFET Transistor; 40 A; 60 V; 3-Pin DPAK
***ure Electronics
N-Channel 60 V 16 mOhm 52 W Surface Mount Power MosFet - TO-252-3
***nell
MOSFET, N-CH, 60V, 46A, 71W, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 46A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.016oh; Available until stocks are exhausted Alternative available
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 46 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) mOhm = 19 / Gate-Source Voltage V = 20 / Fall Time ns = 4.4 / Rise Time ns = 12.4 / Turn-OFF Delay Time ns = 26 / Turn-ON Delay Time ns = 8.4 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 71
***emi
N-Channel PowerTrench® MOSFET, 40V, 50A, 8.5mΩ
***ure Electronics
N-Channel 40 V 50 A 8.5 mOhm Surface Mount PowerTrench® Mosfet -TO-263AB
*** Stop Electro
Power Field-Effect Transistor, 15A I(D), 40V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***el Electronic
Chip Resistor - Surface Mount 910Ohm 0402 (1005 Metric) ±1% ±100ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 910 OHM 1% 1/10W 0402
***ment14 APAC
MOSFET, N, SMD, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:40V; On Resistance Rds(on):8.5mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:60W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D2-PAK; No. of Pins:2; SVHC:No SVHC (20-Jun-2011); Current Id Max:50A; Package / Case:D2-PAK; Power Dissipation Pd:60W; Power Dissipation Pd:60W; Pulse Current Idm:100A; Termination Type:SMD; Voltage Vds Typ:40V; Voltage Vgs Max:1.9V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V
***rchild Semiconductor
This N–Channel MOSFET has been produced using Fairchild Semiconductor's proprietary PowerTrench® technology to deliver low rDS(on) and optimized BVDSS capability to offer superior performance benefit in the application.
Part # Mfg. Description Stock Price
FDB5680
DISTI # 512-FDB5680		ON SemiconductorMOSFET
RoHS: Not compliant		0
    FDB5680Fairchild Semiconductor CorporationPower Field-Effect Transistor, 40A I(D), 60V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    RoHS: Compliant    		8000
    • 1000:$1.5800
    • 500:$1.6600
    • 100:$1.7300
    • 25:$1.8100
    • 1:$1.9400
    FDB5680Fairchild Semiconductor Corporation40 A, 60 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB609
    • 287:$0.6250
    • 51:$0.7000
    • 1:$2.0000
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    OMO.#: OMO-FDB28N30TM-CUT-TAPE-1190

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    Mfr.#: FDBA 56-16-26 PN-K 059

    OMO.#: OMO-FDBA-56-16-26-PN-K-059-1190

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    Availability
    Stock:
    Available
    On Order:
    5000
    Enter Quantity:
    Current price of FDB5680 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $0.94
    $0.94
    10
    $0.89
    $8.91
    100
    $0.84
    $84.38
    500
    $0.80
    $398.45
    1000
    $0.75
    $750.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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