BSZ900N20NS3 G

BSZ900N20NS3 G
Mfr. #:
BSZ900N20NS3 G
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 200V 15.2A TDSON-8 OptiMOS 3
Lifecycle:
New from this manufacturer.
Datasheet:
BSZ900N20NS3 G Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
BSZ900N20NS3 G more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
PG-TSDSON-8
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
200 V
Id - Continuous Drain Current:
15.2 A
Rds On - Drain-Source Resistance:
90 mOhms
Vgs th - Gate-Source Threshold Voltage:
2 V
Vgs - Gate-Source Voltage:
10 V
Qg - Gate Charge:
8.7 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
62.5 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
OptiMOS
Packaging:
Reel
Height:
1.1 mm
Length:
3.3 mm
Series:
OptiMOS 3
Transistor Type:
1 N-Channel
Width:
3.3 mm
Brand:
Infineon Technologies
Forward Transconductance - Min:
8 S
Product Type:
MOSFET
Factory Pack Quantity:
5000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
10 ns
Typical Turn-On Delay Time:
5 ns
Part # Aliases:
BSZ900N20NS3GATMA1 BSZ9N2NS3GXT SP000781806
Unit Weight:
0.003527 oz
Tags
BSZ900N2, BSZ9, BSZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Wireless Charging Solutions
Infineon Wireless Charging Solutions meet today's growing demand for wireless charge applications like smartphones, wearables, notebooks, and low-voltage drive devices. Infineon's highly efficient and cost-effective devices enable state-of-the-art solutions for the transmitter unit for inductive and resonant standards. Infineon devices are ready-to-use for the adapter/charger, fostering time-to-market of full wireless charging solutions. Infineon is a member of the Wireless Power Consortium and the AirFuel Alliance.
Resonant Wireless Charging - Consumer Applications
Infineon Technologies Resonant Wireless Charging - Consumer Applications takes the lead in fast switching in power transfer topologies. With the best figure of merit (FOM) for gate charge times, RDS(on) and Coss they enable 6.78MHz inverter designs. Superior power MOSFET technology addresses frequency switching implementations, especially in the 30-10V areas for class D inverter designs and in the 150-250V voltage class for class E inverter designs.
Part # Mfg. Description Stock Price
BSZ900N20NS3GATMA1
DISTI # V72:2272_06383706
Infineon Technologies AGTrans MOSFET N-CH 200V 15.2A 8-Pin TSDSON EP T/R
RoHS: Compliant
4781
  • 3000:$0.7643
  • 1000:$0.8203
  • 500:$0.8925
  • 250:$1.0368
  • 100:$1.0460
  • 25:$1.1719
  • 10:$1.3021
  • 1:$1.6805
BSZ900N20NS3GATMA1
DISTI # V36:1790_06383706
Infineon Technologies AGTrans MOSFET N-CH 200V 15.2A 8-Pin TSDSON EP T/R
RoHS: Compliant
0
  • 5000000:$0.6113
  • 2500000:$0.6114
  • 500000:$0.6125
  • 50000:$0.6137
  • 5000:$0.6139
BSZ900N20NS3GATMA1
DISTI # BSZ900N20NS3GATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 200V 15.2A 8TSDSON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
4872In Stock
  • 1000:$0.8230
  • 500:$0.9932
  • 100:$1.2089
  • 10:$1.5040
  • 1:$1.6700
BSZ900N20NS3GATMA1
DISTI # BSZ900N20NS3GATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 200V 15.2A 8TSDSON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
4872In Stock
  • 1000:$0.8230
  • 500:$0.9932
  • 100:$1.2089
  • 10:$1.5040
  • 1:$1.6700
BSZ900N20NS3GATMA1
DISTI # BSZ900N20NS3GATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 200V 15.2A 8TSDSON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
On Order
  • 10000:$0.6980
  • 5000:$0.7164
BSZ900N20NS3GATMA1
DISTI # 32695623
Infineon Technologies AGTrans MOSFET N-CH 200V 15.2A 8-Pin TSDSON EP T/R
RoHS: Compliant
5000
  • 5000:$1.0750
BSZ900N20NS3GATMA1
DISTI # 31230047
Infineon Technologies AGTrans MOSFET N-CH 200V 15.2A 8-Pin TSDSON EP T/R
RoHS: Compliant
4781
  • 9:$1.6923
BSZ900N20NS3 G
DISTI # BSZ900N20NS3 G
Infineon Technologies AGTrans MOSFET N-CH 200V 15.2A 8-Pin TSDSON EP (Alt: BSZ900N20NS3 G)
RoHS: Compliant
Min Qty: 5000
Asia - 0
  • 250000:$0.6643
  • 125000:$0.6728
  • 50000:$0.6816
  • 25000:$0.6905
  • 15000:$0.7092
  • 10000:$0.7289
  • 5000:$0.7497
BSZ900N20NS3GATMA1
DISTI # BSZ900N20NS3GATMA1
Infineon Technologies AGTrans MOSFET N-CH 200V 15.2A 8-Pin TSDSON T/R - Tape and Reel (Alt: BSZ900N20NS3GATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel
Americas - 0
  • 50000:$0.6659
  • 30000:$0.6779
  • 20000:$0.7019
  • 10000:$0.7279
  • 5000:$0.7559
BSZ900N20NS3GATMA1
DISTI # BSZ900N20NS3GATMA1
Infineon Technologies AGTrans MOSFET N-CH 200V 15.2A 8-Pin TSDSON T/R - Bulk (Alt: BSZ900N20NS3GATMA1)
RoHS: Compliant
Min Qty: 532
Container: Bulk
Americas - 0
  • 5320:$0.5969
  • 2660:$0.6079
  • 1596:$0.6289
  • 1064:$0.6519
  • 532:$0.6769
BSZ900N20NS3GATMA1
DISTI # SP000781806
Infineon Technologies AGTrans MOSFET N-CH 200V 15.2A 8-Pin TSDSON T/R (Alt: SP000781806)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel
Europe - 0
  • 50000:€0.6699
  • 30000:€0.7139
  • 20000:€0.7849
  • 10000:€0.8789
  • 5000:€1.1259
BSZ900N20NS3GATMA1
DISTI # 79X1341
Infineon Technologies AGMOSFET, N-CH, 200V, 15.2A, PG-TSDSON- 8,Transistor Polarity:N Channel,Continuous Drain Current Id:15.2A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.077ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes28
  • 1000:$0.7690
  • 500:$0.9280
  • 250:$0.9940
  • 100:$1.0600
  • 50:$1.1500
  • 25:$1.2400
  • 10:$1.3200
  • 1:$1.5600
BSZ900N20NS3GATMA1.
DISTI # 27AC1118
Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:15.2A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.077ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation Pd:62.5W,No. of Pins:8Pins RoHS Compliant: Yes0
  • 50000:$0.6660
  • 30000:$0.6780
  • 20000:$0.7020
  • 10000:$0.7280
  • 1:$0.7560
BSZ900N20NS3 G
DISTI # 726-BSZ900N20NS3G
Infineon Technologies AGMOSFET N-Ch 200V 15.2A TDSON-8 OptiMOS 3
RoHS: Compliant
2318
  • 1:$1.5400
  • 10:$1.3100
  • 100:$1.0500
  • 500:$0.9190
  • 1000:$0.7610
  • 2500:$0.7090
  • 5000:$0.6830
  • 10000:$0.6560
BSZ900N20NS3GATMA1
DISTI # 726-BSZ900N20NS3GATM
Infineon Technologies AGMOSFET N-Ch 200V 15.2A TDSON-8 OptiMOS 3
RoHS: Compliant
7907
  • 1:$1.5400
  • 10:$1.3100
  • 100:$1.0500
  • 500:$0.9190
  • 1000:$0.7610
  • 2500:$0.7090
  • 5000:$0.6830
  • 10000:$0.6560
BSZ900N20NS3GATMA1Infineon Technologies AGSingle N-Channel 200 V 90 mOhm 8.7 nC OptiMOS Power Mosfet - TSDSON-8
RoHS: Not Compliant
5000Reel
  • 5000:$0.6550
BSZ900N20NS3GATMA1Infineon Technologies AGPower Field-Effect Transistor, 15.2A I(D), 200V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Not Compliant
90
  • 1000:$0.6200
  • 500:$0.6500
  • 100:$0.6800
  • 25:$0.7100
  • 1:$0.7600
BSZ900N20NS3GATMA1
DISTI # 9064444P
Infineon Technologies AGMOSFET N-CH 200V 15.2A OPTIMOS TSDSON8EP, RL10
  • 2500:£0.5500
  • 1000:£0.5640
  • 500:£0.6550
  • 100:£0.7460
BSZ900N20NS3GATMA1
DISTI # 2432723
Infineon Technologies AGMOSFET, N CH, 200V, 15.2A, TSDSON-887
  • 500:£0.7160
  • 250:£0.7670
  • 100:£0.8170
  • 10:£1.0700
  • 1:£1.3600
BSZ900N20NS3GATMA1
DISTI # XSFP00000136212
Infineon Technologies AG 
RoHS: Compliant
10000 in Stock0 on Order
  • 10000:$0.8733
  • 5000:$0.9357
BSZ900N20NS3GATMA1
DISTI # 2432723RL
Infineon Technologies AGMOSFET, N CH, 200V, 15.2A, TSDSON-8
RoHS: Compliant
0
  • 5000:$1.0600
  • 2500:$1.1000
  • 1000:$1.1800
  • 500:$1.4100
  • 100:$1.6200
  • 10:$2.0100
  • 1:$2.3700
BSZ900N20NS3GATMA1
DISTI # 2432723
Infineon Technologies AGMOSFET, N CH, 200V, 15.2A, TSDSON-8
RoHS: Compliant
2
  • 5000:$1.0600
  • 2500:$1.1000
  • 1000:$1.1800
  • 500:$1.4100
  • 100:$1.6200
  • 10:$2.0100
  • 1:$2.3700
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Availability
Stock:
Available
On Order:
1985
Enter Quantity:
Current price of BSZ900N20NS3 G is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$1.54
$1.54
10
$1.31
$13.10
100
$1.05
$105.00
500
$0.92
$459.50
1000
$0.76
$761.00
2500
$0.71
$1 772.50
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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