BSZ900N2

BSZ900N20NS3 G vs BSZ900N20NS3GATMA1 vs BSZ900N20NS3G

 
PartNumberBSZ900N20NS3 GBSZ900N20NS3GATMA1BSZ900N20NS3G
DescriptionMOSFET N-Ch 200V 15.2A TDSON-8 OptiMOS 3MOSFET N-Ch 200V 15.2A TDSON-8 OptiMOS 3
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePG-TSDSON-8TSDSON-8-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage200 V200 V-
Id Continuous Drain Current15.2 A15.2 A-
Rds On Drain Source Resistance90 mOhms77 mOhms-
Vgs th Gate Source Threshold Voltage2 V2 V-
Vgs Gate Source Voltage10 V20 V-
Qg Gate Charge8.7 nC11.6 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation62.5 W62.5 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameOptiMOSOptiMOS-
PackagingReelReel-
Height1.1 mm1.1 mm-
Length3.3 mm3.3 mm-
SeriesOptiMOS 3OptiMOS 3-
Transistor Type1 N-Channel1 N-Channel-
Width3.3 mm3.3 mm-
BrandInfineon TechnologiesInfineon Technologies-
Forward Transconductance Min8 S8 S-
Product TypeMOSFETMOSFET-
Factory Pack Quantity50005000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time10 ns10 ns-
Typical Turn On Delay Time5 ns5 ns-
Part # AliasesBSZ900N20NS3GATMA1 BSZ9N2NS3GXT SP000781806BSZ900N20NS3 BSZ9N2NS3GXT G SP000781806-
Unit Weight0.003527 oz0.001270 oz-
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
BSZ900N20NS3 G MOSFET N-Ch 200V 15.2A TDSON-8 OptiMOS 3
BSZ900N20NS3GATMA1 MOSFET N-Ch 200V 15.2A TDSON-8 OptiMOS 3
BSZ900N20NS3GATMA1 MOSFET N-CH 200V 15.2A 8TSDSON
BSZ900N20NS3 G Trans MOSFET N-CH 200V 15.2A 8-Pin TSDSON EP (Alt: BSZ900N20NS3 G)
BSZ900N20NS3G New and Original
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