PartNumber | BSZ900N20NS3 G | BSZ900N20NS3GATMA1 | BSZ900N20NS3G |
Description | MOSFET N-Ch 200V 15.2A TDSON-8 OptiMOS 3 | MOSFET N-Ch 200V 15.2A TDSON-8 OptiMOS 3 | |
Manufacturer | Infineon | Infineon | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | PG-TSDSON-8 | TSDSON-8 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 200 V | 200 V | - |
Id Continuous Drain Current | 15.2 A | 15.2 A | - |
Rds On Drain Source Resistance | 90 mOhms | 77 mOhms | - |
Vgs th Gate Source Threshold Voltage | 2 V | 2 V | - |
Vgs Gate Source Voltage | 10 V | 20 V | - |
Qg Gate Charge | 8.7 nC | 11.6 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 62.5 W | 62.5 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Tradename | OptiMOS | OptiMOS | - |
Packaging | Reel | Reel | - |
Height | 1.1 mm | 1.1 mm | - |
Length | 3.3 mm | 3.3 mm | - |
Series | OptiMOS 3 | OptiMOS 3 | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Width | 3.3 mm | 3.3 mm | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Forward Transconductance Min | 8 S | 8 S | - |
Product Type | MOSFET | MOSFET | - |
Factory Pack Quantity | 5000 | 5000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 10 ns | 10 ns | - |
Typical Turn On Delay Time | 5 ns | 5 ns | - |
Part # Aliases | BSZ900N20NS3GATMA1 BSZ9N2NS3GXT SP000781806 | BSZ900N20NS3 BSZ9N2NS3GXT G SP000781806 | - |
Unit Weight | 0.003527 oz | 0.001270 oz | - |