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CDM22010-650 SL

CDM22010-650 SL
Mfr. #:
CDM22010-650 SL
Manufacturer:
Central Semiconductor
Description:
MOSFET N-Ch 10A PFC FET 650V 8.0nC 0.88Ohm
Lifecycle:
New from this manufacturer.
Datasheet:
CDM22010-650 SL Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
CDM22010-650 SL more Information
Product Attribute
Attribute Value
Manufacturer:
Central Semiconductor
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-220-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
650 V
Id - Continuous Drain Current:
10 A
Rds On - Drain-Source Resistance:
880 mOhms
Vgs th - Gate-Source Threshold Voltage:
2 V
Vgs - Gate-Source Voltage:
30 V
Qg - Gate Charge:
20 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
156 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Tube
Series:
CDM
Transistor Type:
1 N-Channel
Brand:
Central Semiconductor
Fall Time:
36 ns
Product Type:
MOSFET
Rise Time:
33 ns
Factory Pack Quantity:
750
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
57 ns
Typical Turn-On Delay Time:
20 ns
Unit Weight:
0.211644 oz
Tags
CDM2201, CDM220, CDM22, CDM2, CDM
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET N-CH 10A 650V TO220
CDMxx Silicon N-Channel Power MOSFETs
Central Semiconductor CDMxx Silicon N-Channel Power MOSFETs are designed for high voltage, fast switching applications like Power Factor Correction (PFC), lighting and power inverters. These MOSFETs combine high voltage capability with low rDS(ON), low threshold voltage, and low gate charge for optimal efficiency.Learn More
CxxDM Surface Mount Enhancement-Mode MOSFETs
Central Semiconductor CxxDM Surface Mount Enhancement-Mode MOSFETs are designed for high speed pulsed amplifier and driver applications. Central Semiconductor CxxDM Surface Mount Enhancement-Mode MOSFETs offer a very low rDS(ON) and low threshold voltage. The CMLDM5757 consists of dual P-channel enhancement-mode silicon MOSFETs. The CMLDM3757 consists of complementary N-channel and P-channel enhancement-mode silicon MOSFETs. The CMPDM7002AHC is a high current version of the 2N7002A enhancement-mode N-channel MOSFET. And the CEDM7001 is an N-channel enhancement-mode silicon MOSFET, manufactured with the N-channel DMOS process. CEDM8004VL is a P-Channel Enhancement-mode MOSFET, manufactured by the P-Channel DMOS process, designed for high speed pulsed amplifier and driver applications. CEDM7004VL is an N-Channel Enhancement-mode MOSFET, manufactured by the N-Channel DMOS process, designed for high speed pulsed amplifier and driver applications. Learn more
Part # Mfg. Description Stock Price
CDM22010-650 SL
DISTI # CDM22010-650SL-ND		Central Semiconductor CorpMOSFET N-CH 10A 650V TO220
RoHS: Compliant
Min Qty: 1
Container: Tube		629In Stock
  • 500:$1.1900
  • 100:$1.5300
  • 50:$1.7000
  • 10:$1.9040
  • 1:$2.1100
CDM22010-650 SL
DISTI # 610-CDM22010-650SL		Central Semiconductor CorpMOSFET N-Ch 10A PFC FET 650V 8.0nC 0.88Ohm
RoHS: Compliant		644
  • 1:$1.9200
  • 10:$1.7000
  • 100:$1.3600
  • 500:$1.2000
  • 1000:$0.9860
  • 2500:$0.9190
  • 5000:$0.8850
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Availability
Stock:
644
On Order:
2627
Enter Quantity:
Current price of CDM22010-650 SL is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$1.92
$1.92
10
$1.70
$17.00
100
$1.36
$136.00
500
$1.20
$600.00
1000
$0.99
$986.00
2500
$0.92
$2 297.50
5000
$0.88
$4 425.00
10000
$0.85
$8 500.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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