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IXXH80N65B4H1

IXXH80N65B4H1
Mfr. #:
IXXH80N65B4H1
Manufacturer:
Littelfuse
Description:
IGBT Transistors 650V/160A TRENCH IGBT GENX4 XPT
Lifecycle:
New from this manufacturer.
Datasheet:
IXXH80N65B4H1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXXH80N65B4H1 DatasheetIXXH80N65B4H1 Datasheet (P4-P6)IXXH80N65B4H1 Datasheet (P7)
ECAD Model:
More Information:
IXXH80N65B4H1 more Information
Product Attribute
Attribute Value
Manufacturer:
IXYS
Product Category:
IGBT Transistors
RoHS:
Y
Technology:
Si
Package / Case:
TO-247AD-3
Mounting Style:
Through Hole
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
650 V
Collector-Emitter Saturation Voltage:
1.65 V
Maximum Gate Emitter Voltage:
20 V
Continuous Collector Current at 25 C:
160 A
Pd - Power Dissipation:
625 W
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Series:
IXXH80N65
Packaging:
Tube
Continuous Collector Current Ic Max:
80 A
Brand:
IXYS
Gate-Emitter Leakage Current:
100 nA
Product Type:
IGBT Transistors
Factory Pack Quantity:
30
Subcategory:
IGBTs
Tradename:
XPT
Unit Weight:
0.158733 oz
Tags
IXXH8, IXXH, IXX
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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 650V 160A 625000mW 3-Pin(3+Tab) TO-247AD
***ark
Transistor, Igbt, 650V, 160A, To-247Ad Rohs Compliant: Yes
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***ure Electronics
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***DA Technology Co., Ltd.
Product Description Demo for Development.
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Igbt Single Transistor, 60 A, 2.2 V, 455 W, 650 V, To-247, 3 Rohs Compliant: Yes
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IGBT, SINGLE, 650V, 60A, TO-247
***DA Technology Co., Ltd.
Product Description Demo for Development.
***nell
IGBT, SINGLE, 650V, 60A, TO-247; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 2.2V; Power Dissipation Pd: 455W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No. of Pins:
***ical
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***el Electronic
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***i-Key
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new, original packaged
***et
Trans IGBT Chip N-CH 650V 140A 3-Pin TO-247AD Tube
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Target Applications: AC-DC; Pump; Solar; UPS; Welding
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***ment14 APAC
IGBT, SINGLE, 650V, 140A, TO-247AC-3
***i-Key Marketplace
IRGP4790 - DISCRETE IGBT WITHOUT
***or
IGBT W/ULTRAFAST SOFT RECOVERY D
***nell
IGBT, SINGLE, 650V, 140A, TO-247AC-3; DC Collector Current: 140A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 455W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247AC; No.
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Trans IGBT Chip N-CH 650V 140A 3-Pin(3+Tab) TO-247AD Tube
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IGBT, SINGLE, 650V, 140A, TO-247AC; DC Collector Current: 140A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 450W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247AC; No. of
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French Electronic Distributor since 1988
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
650V XPT™ High Speed Trench IGBTs
IXYS 650V XPT™ High Speed Trench IGBTs are designed to minimize conduction and switching losses, especially in hard-switching applications. IXYS 650V XPT™ High Speed Trench IGBTs are optimized for different switching speed ranges (up to 60kHz). Devices co-packed with IXYS ultra-fast Sonic-FRD™ diodes are also available. The current ratings of devices in this product family range from 30A to 200A at a high temperature of 110°C. These devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In addition, they display exceptional ruggedness under short-circuit conditions – a 10μs Short Circuit Safe Operating Area (SCSOA). Moreover these IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage of 650V, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losses. Thanks to its speed and ‘soft recovery’ characteristics, the co-packed Sonic-FRD™ diode is an ideal match for these XPT™ IGBTs in reducing turn-on and turn-off losses. It is optimized to suppress ringing oscillations and voltage spikes in recovery, thereby producing smooth switching waveforms and significantly lowering electromagnetic interference (EMI) in the process. The temperature stability of its forward voltage also helps lower switching losses when devices are operated in parallel. The new IGBTs are well-suited for a wide variety of power conversion applications, including lighting control, battery chargers, motor drives, power inverters, power factor correction circuits, switch-mode power supplies, uninterruptible power supplies, E-Bikes, and welding machines.Learn More
Part # Mfg. Description Stock Price
IXXH80N65B4H1
DISTI # 30706002		IXYS CorporationTrans IGBT Chip N-CH 650V 160A 3-Pin(3+Tab) TO-247AD
RoHS: Compliant		69
  • 1000:$4.7616
  • 500:$5.4720
  • 250:$5.9520
  • 100:$6.5280
  • 50:$6.6048
  • 25:$7.2288
  • 10:$7.9392
  • 3:$8.8128
IXXH80N65B4H1
DISTI # 30292435		IXYS CorporationTrans IGBT Chip N-CH 650V 160A 3-Pin(3+Tab) TO-247AD
RoHS: Compliant		30
  • 2:$8.5220
IXXH80N65B4H1
DISTI # IXXH80N65B4H1-ND		IXYS CorporationIGBT 650V 160A 625W TO247AD
RoHS: Compliant
Min Qty: 1
Container: Tube		3446In Stock
  • 1020:$4.9612
  • 510:$5.6963
  • 270:$6.2475
  • 120:$6.7988
  • 30:$7.5337
  • 10:$8.2690
  • 1:$9.1900
IXXH80N65B4H1
DISTI # V99:2348_15876179		IXYS CorporationTrans IGBT Chip N-CH 650V 160A 3-Pin(3+Tab) TO-247AD
RoHS: Compliant		30
  • 1000:$4.5570
  • 500:$5.2280
  • 250:$5.7240
  • 100:$6.2660
  • 50:$6.5760
  • 25:$7.0130
  • 10:$7.7040
  • 1:$8.5399
IXXH80N65B4H1
DISTI # 747-IXXH80N65B4H1		IXYS CorporationIGBT Transistors 650V/160A TRENCH IGBT GENX4 XPT
RoHS: Compliant		533
  • 1:$9.1800
  • 10:$8.2700
  • 25:$7.5300
  • 50:$6.8800
  • 100:$6.8000
  • 250:$6.2000
  • 500:$5.7000
  • 1000:$4.9600
IXXH80N65B4H1
DISTI # 1258049		IXYS CorporationIGBT 80A 650V TO247AD, EA169
  • 60:£5.0900
  • 30:£5.1900
  • 10:£5.4400
  • 5:£5.7300
  • 1:£6.4600
IXXH80N65B4H1
DISTI # IXXH80N65B4H1		IXYS CorporationTransistor: IGBT,GenX4™,650V,80A,625W,TO247-346
  • 1:$7.2900
  • 3:$6.5600
  • 10:$5.8000
  • 30:$5.2100
IXXH80N65B4H1  9448
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    Availability
    Stock:
    524
    On Order:
    2507
    Enter Quantity:
    Current price of IXXH80N65B4H1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $9.18
    $9.18
    10
    $8.27
    $82.70
    25
    $7.53
    $188.25
    50
    $6.88
    $344.00
    100
    $6.80
    $680.00
    250
    $6.20
    $1 550.00
    500
    $5.70
    $2 850.00
    1000
    $4.96
    $4 960.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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