IXXH8

IXXH80N65B4D1 vs IXXH80N65B4 vs IXXH80N65B4D1/SGL160N60U

 
PartNumberIXXH80N65B4D1IXXH80N65B4IXXH80N65B4D1/SGL160N60U
DescriptionDiscrete Semiconductor Modules Disc IGBT XPT-GenX4 TO-247ADIGBT Transistors 650V/160A TRENCH IGBT GENX4 XPT
ManufacturerIXYSIXYS-
Product CategoryDiscrete Semiconductor ModulesIGBT Transistors-
RoHSYY-
ProductDiode Power Modules--
TypeGenX4--
Vgs Gate Source Voltage20 V--
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-247-3TO-247AD-3-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
PackagingTubeTube-
ConfigurationSingleSingle-
BrandIXYSIXYS-
Transistor PolarityN-Channel--
Fall Time53 ns--
Id Continuous Drain Current180 A--
Pd Power Dissipation625 W625 W-
Product TypeDiscrete Semiconductor ModulesIGBT Transistors-
Rise Time100 ns--
Factory Pack Quantity3030-
SubcategoryDiscrete Semiconductor ModulesIGBTs-
TradenameXPTXPT-
Typical Turn Off Delay Time112 ns--
Typical Turn On Delay Time26 ns--
Vds Drain Source Breakdown Voltage650 V--
Vgs th Gate Source Threshold Voltage4 V--
Technology-Si-
Collector Emitter Voltage VCEO Max-650 V-
Collector Emitter Saturation Voltage-1.65 V-
Maximum Gate Emitter Voltage-20 V-
Continuous Collector Current at 25 C-160 A-
Series-IXXH80N65-
Continuous Collector Current Ic Max-80 A-
Gate Emitter Leakage Current-100 nA-
Unit Weight-0.158733 oz-
Manufacturer Part # Description RFQ
Littelfuse
Littelfuse
IXXH80N65B4D1 Discrete Semiconductor Modules Disc IGBT XPT-GenX4 TO-247AD
IXXH80N65B4H1 IGBT Transistors 650V/160A TRENCH IGBT GENX4 XPT
IXXH80N65B4 IGBT Transistors 650V/160A TRENCH IGBT GENX4 XPT
IXXH80N65B4D1 New and Original
IXXH80N65B4D1/SGL160N60U New and Original
IXXH80N65B4D1/SGL160N60UFD New and Original
IXXH80N65B4H1 IGBT Transistors 650V/160A TRENCH IGBT GENX4 XPT
IXXH80N65B4 IGBT Transistors 650V/160A TRENCH IGBT GENX4 XPT
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