PartNumber | IXXH80N65B4D1 | IXXH80N65B4 | IXXH80N65B4D1/SGL160N60U |
Description | Discrete Semiconductor Modules Disc IGBT XPT-GenX4 TO-247AD | IGBT Transistors 650V/160A TRENCH IGBT GENX4 XPT | |
Manufacturer | IXYS | IXYS | - |
Product Category | Discrete Semiconductor Modules | IGBT Transistors | - |
RoHS | Y | Y | - |
Product | Diode Power Modules | - | - |
Type | GenX4 | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Mounting Style | Through Hole | Through Hole | - |
Package / Case | TO-247-3 | TO-247AD-3 | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 175 C | + 175 C | - |
Packaging | Tube | Tube | - |
Configuration | Single | Single | - |
Brand | IXYS | IXYS | - |
Transistor Polarity | N-Channel | - | - |
Fall Time | 53 ns | - | - |
Id Continuous Drain Current | 180 A | - | - |
Pd Power Dissipation | 625 W | 625 W | - |
Product Type | Discrete Semiconductor Modules | IGBT Transistors | - |
Rise Time | 100 ns | - | - |
Factory Pack Quantity | 30 | 30 | - |
Subcategory | Discrete Semiconductor Modules | IGBTs | - |
Tradename | XPT | XPT | - |
Typical Turn Off Delay Time | 112 ns | - | - |
Typical Turn On Delay Time | 26 ns | - | - |
Vds Drain Source Breakdown Voltage | 650 V | - | - |
Vgs th Gate Source Threshold Voltage | 4 V | - | - |
Technology | - | Si | - |
Collector Emitter Voltage VCEO Max | - | 650 V | - |
Collector Emitter Saturation Voltage | - | 1.65 V | - |
Maximum Gate Emitter Voltage | - | 20 V | - |
Continuous Collector Current at 25 C | - | 160 A | - |
Series | - | IXXH80N65 | - |
Continuous Collector Current Ic Max | - | 80 A | - |
Gate Emitter Leakage Current | - | 100 nA | - |
Unit Weight | - | 0.158733 oz | - |