SI4488DY-T1-GE3

SI4488DY-T1-GE3
Mfr. #:
SI4488DY-T1-GE3
Manufacturer:
Vishay
Description:
RF Bipolar Transistors MOSFET 150V 5.0A 3.1W 50mohm @ 10V
Lifecycle:
New from this manufacturer.
Datasheet:
SI4488DY-T1-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
SI4488DY-T1-GE3 more Information
Product Attribute
Attribute Value
Manufacturer
VISHAY
Product Category
FETs - Single
Packaging
Reel
Part-Aliases
SI4488DY-GE3
Unit-Weight
0.017870 oz
Mounting-Style
SMD/SMT
Package-Case
SO-8
Technology
Si
Number-of-Channels
1 Channel
Configuration
Single
Transistor-Type
1 N-Channel
Pd-Power-Dissipation
1.56 W
Maximum-Operating-Temperature
+ 150 C
Minimum-Operating-Temperature
- 55 C
Vgs-Gate-Source-Voltage
20 V
Id-Continuous-Drain-Current
3.5 A
Vds-Drain-Source-Breakdown-Voltage
150 V
Rds-On-Drain-Source-Resistance
50 mOhms
Transistor-Polarity
N-Channel
Tags
SI4488DY-T, SI4488D, SI4488, SI448, SI44, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N-CH 150V 3.5A 8-Pin SOIC N T/R
***ark
Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:5A; Drain Source Voltage, Vds:150V; On Resistance, Rds(on):0.05ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2V ;RoHS Compliant: Yes
***ment14 APAC
MOSFET,N CH,DIODE,150V,5A,8-SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.041ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:3.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:5A; Power Dissipation Pd:3.1W; Voltage Vgs Max:20V
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Part # Mfg. Description Stock Price
SI4488DY-T1-GE3
DISTI # V72:2272_09216519
Vishay IntertechnologiesTrans MOSFET N-CH 150V 3.5A 8-Pin SOIC N T/R
RoHS: Compliant
2972
  • 1000:$0.9829
  • 500:$1.1554
  • 250:$1.2707
  • 100:$1.3159
  • 25:$1.5285
  • 10:$1.6375
  • 1:$1.9008
SI4488DY-T1-GE3
DISTI # SI4488DY-T1-GE3CT-ND
Vishay SiliconixMOSFET N-CH 150V 3.5A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
2160In Stock
  • 1000:$0.9839
  • 500:$1.1875
  • 100:$1.5268
  • 10:$1.9000
  • 1:$2.1000
SI4488DY-T1-GE3
DISTI # SI4488DY-T1-GE3DKR-ND
Vishay SiliconixMOSFET N-CH 150V 3.5A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
2160In Stock
  • 1000:$0.9839
  • 500:$1.1875
  • 100:$1.5268
  • 10:$1.9000
  • 1:$2.1000
SI4488DY-T1-GE3
DISTI # SI4488DY-T1-GE3TR-ND
Vishay SiliconixMOSFET N-CH 150V 3.5A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 2500:$0.8894
SI4488DY-T1-GE3
DISTI # 25790120
Vishay IntertechnologiesTrans MOSFET N-CH 150V 3.5A 8-Pin SOIC N T/R
RoHS: Compliant
2972
  • 1000:$0.9829
  • 500:$1.1554
  • 250:$1.2707
  • 100:$1.3159
  • 25:$1.5286
  • 10:$1.6375
  • 7:$1.9008
SI4488DY-T1-GE3
DISTI # 31237008
Vishay IntertechnologiesTrans MOSFET N-CH 150V 3.5A 8-Pin SOIC N T/R
RoHS: Compliant
2500
  • 2500:$0.8926
SI4488DY-T1-GE3
DISTI # SI4488DY-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 150V 3.5A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4488DY-T1-GE3)
RoHS: Not Compliant
Min Qty: 2500
Container: Reel
Americas - 0
  • 2500:$0.5769
  • 5000:$0.5599
  • 10000:$0.5369
  • 15000:$0.5219
  • 25000:$0.5079
SI4488DY-T1-GE3
DISTI # 15R5041
Vishay IntertechnologiesN CH MOSFET,Transistor Polarity:N Channel,Continuous Drain Current Id:5A,Drain Source Voltage Vds:150V,On Resistance Rds(on):0.041ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation Pd:3.1W RoHS Compliant: Yes0
  • 1:$1.4300
  • 1000:$1.3500
  • 2000:$1.2800
  • 4000:$1.1500
  • 6000:$1.1100
  • 10000:$1.0700
SI4488DY-T1-GE3
DISTI # 23T8512
Vishay IntertechnologiesMOSFET Transistor, N Channel, 5 A, 150 V, 0.041 ohm, 10 V, 2 V RoHS Compliant: Yes2229
  • 1:$2.3200
  • 10:$1.9300
  • 25:$1.7900
  • 50:$1.6400
  • 100:$1.5000
  • 250:$1.4100
  • 500:$1.3100
SI4488DY-T1-GE3
DISTI # 781-SI4488DY-GE3
Vishay IntertechnologiesMOSFET 150V Vds 20V Vgs SO-8
RoHS: Compliant
1460
  • 1:$2.3200
  • 10:$1.9300
  • 100:$1.5000
  • 500:$1.3100
  • 1000:$1.0900
  • 2500:$1.0100
SI4488DYT1GE3Vishay IntertechnologiesSmall Signal Field-Effect Transistor, 3.5A I(D), 150V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant
Europe - 2500
    SI4488DY-T1-GE3
    DISTI # 1858958RL
    Vishay IntertechnologiesMOSFET,N CH,DIODE,150V,5A,8-SOIC
    RoHS: Compliant
    0
    • 1:$3.3500
    • 10:$3.0300
    • 100:$2.4400
    • 500:$1.9000
    • 1000:$1.5700
    SI4488DY-T1-GE3
    DISTI # 1858958
    Vishay IntertechnologiesMOSFET,N CH,DIODE,150V,5A,8-SOIC
    RoHS: Compliant
    2229
    • 1:$3.3500
    • 10:$3.0300
    • 100:$2.4400
    • 500:$1.9000
    • 1000:$1.5700
    SI4488DY-T1-GE3
    DISTI # C1S803600999653
    Vishay IntertechnologiesMOSFETs2972
    • 250:$1.2707
    • 100:$1.3159
    • 25:$1.5286
    • 10:$1.6375
    SI4488DY-T1-GE3
    DISTI # 1858958
    Vishay IntertechnologiesMOSFET,N CH,DIODE,150V,5A,8-SOIC
    RoHS: Compliant
    2474
    • 5:£1.6100
    • 25:£1.4900
    • 100:£1.1500
    • 250:£1.0400
    • 500:£0.9380
    Image Part # Description
    SI4488DY-T1-GE3

    Mfr.#: SI4488DY-T1-GE3

    OMO.#: OMO-SI4488DY-T1-GE3

    MOSFET 150V Vds 20V Vgs SO-8
    SI4488DY-T1-E3

    Mfr.#: SI4488DY-T1-E3

    OMO.#: OMO-SI4488DY-T1-E3

    MOSFET 150V Vds 20V Vgs SO-8
    SI4488DY-T1-GE3

    Mfr.#: SI4488DY-T1-GE3

    OMO.#: OMO-SI4488DY-T1-GE3-VISHAY

    RF Bipolar Transistors MOSFET 150V 5.0A 3.1W 50mohm @ 10V
    SI4488DY-T1-E3-CUT TAPE

    Mfr.#: SI4488DY-T1-E3-CUT TAPE

    OMO.#: OMO-SI4488DY-T1-E3-CUT-TAPE-1190

    New and Original
    SI4488DY

    Mfr.#: SI4488DY

    OMO.#: OMO-SI4488DY-1190

    MOSFET 150V Vds 20V Vgs SO-8
    SI4488DY-T1-E3

    Mfr.#: SI4488DY-T1-E3

    OMO.#: OMO-SI4488DY-T1-E3-VISHAY

    MOSFET N-CH 150V 3.5A 8-SOIC
    Availability
    Stock:
    Available
    On Order:
    2500
    Enter Quantity:
    Current price of SI4488DY-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $0.76
    $0.76
    10
    $0.72
    $7.24
    100
    $0.69
    $68.57
    500
    $0.65
    $323.80
    1000
    $0.61
    $609.50
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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