FDR836P

Mfr. #:: FDR836P
Manufacturer:: Rochester Electronics, LLC
Description:: P-Channel 2.5V Specified MOSFET - Bulk (Alt: FDR836P)
Lifecycle:: New from this manufacturer.
Datasheet:: FDR836P Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Tags: FDR83, FDR8, FDR

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FDR836P Description

***et: P-Channel 2.5V Specified MOSFET

***ser: Not available to order DISC BY MFG 2/02

***(Formerly Allied Electronics): SI3460DDV-T1-GE3 N-channel MOSFET Transistor; 7.9 A; 20 V; 6-Pin TSOP

***itex: Transistor: N-MOSFET; unipolar; 20V; 7.9A; 0.028ohm; 2.7W; -55+150 deg.C; SMD; TSOP6

***ure Electronics: N-Channel 20 V 0.028 Ohm 2.7 W Surface Mount Power Mosfet - TSOP-6

***ark: Mosfet,n Ch,d-S,20V,7.9A,tsop6, Full Reel; Channel Type:n Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:7.9A; Transistor Mounting:surface Mount; Rds(On) Test Voltage:4.5V; Gate Source Threshold Voltage Max:400Mv Rohs Compliant: No

***ment14 APAC: MOSFET,N CH,D-S,20V,7.9A,TSOP6; Transistor Polarity:N Channel; Continuous Drain Current Id:7.9A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.023ohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:1.7W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TSOP; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Current Id Max:6.2A; Power Dissipation Pd:1.7W; Voltage Vgs Max:8V

***emi: N-Channel PowerTrench® MOSFET, 2.5V Specified, 20V, 6.2A, 24mΩ

*** Source Electronics: Trans MOSFET N-CH 20V 6.2A 6-Pin TSOT-23 T/R / MOSFET N-CH 20V 6.2A SSOT-6

***ark: Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:6.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:820mV; Power Dissipation:1.6W; No. of Pins:6Pins RoHS Compliant: Yes

***rchild Semiconductor: This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint compared with bigger SO-8 and TSSOP-8 packages.

***Yang: Transistor MOSFET Array Dual N-CH 20V 7.5A 8-Pin SOIC T/R - Tape and Reel

***emi: Dual N-Channel PowerTrench™ MOSFET, 2.5V Specified, 20V, 7.5A, 18mΩ

***ure Electronics: Dual N-Channel 20 V 18 mOhm SMT PowerTrench Mosfet - SOIC-8

***rchild Semiconductor: These N-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

***ment14 APAC: MOSFET, DUAL, NN, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:7.5A; Drain Source Voltage Vds:20V; On Resistance Rds(on):18mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:800mV; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Cont Current Id @ 25°C:7.5A; Current Id Max:7.5A; No. of Transistors:2; Package / Case:SOIC; Power Dissipation Pd:2W; Power Dissipation Pd:2W; Pulse Current Idm:20A; SMD Marking:FDS6890A; Termination Type:SMD; Voltage Vds:20V; Voltage Vds Typ:20V; Voltage Vgs Max:800mV; Voltage Vgs Rds on Measurement:4.5V; Voltage Vgs th Min:1.5V

***emi: N-Channel PowerTrench® MOSFET 20V, 7A, 26mΩ

***ure Electronics: N-Channel 20 V 7 A 14 mOhm Power Trench® Mosfet - MicorFET

***rchild Semiconductor: This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the rDS(on) @ VGS = 1.5 V on special MicroFET leadframe.

***nell: MOSFET, N CH, 20V, 7A, MFET1.6X1.6; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.019ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:700mV; Power Dissipation Pd:2.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:MicroFET; No. of Pins:6; MSL:MSL 1 - Unlimited

***et Europe: Trans MOSFET P-CH 20V 7A 6-Pin TSOP T/R

***ure Electronics: P-CH MOSFET TSOP-6 20V 27MOHM @ 4.5V

***ment14 APAC: MOSFET, P CH, -20V, -8A, TSOP-6

***ronik: P-CHANNEL-FET 7A 20V TSOP-6 RoHSconf

***nell: MOSFET, P CH, -20V, 0.0347OHM, -8A, TSOP; Transistor Polarity:P Channel; Continuous Drain Current Id:-8A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.0347ohm; Rds(on) Test Voltage Vgs:-1.8V; Power Dissipation Pd:2.97W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TSOP; No. of Pins:6; MSL:-

***ure Electronics: SI3493BDV Series 20 V 0.0275 O Surface Mount Power Mosfet - TSOP-6

***ical: Trans MOSFET P-CH 20V 7A 6-Pin TSOP T/R

***mal: P-Ch MOSFET TSOP-6 20V 27mohm @ 4.5V

***id Electronics: Small Signal Field-Effect Transistor 8A I(D)

***el Electronic: MOSFET 20V 8.0A 2.97W 27.5mohm @ 4.5V

Market price

Part #	Mfg.	Description	Stock	Price
FDR836P DISTI # FDR836P	ON Semiconductor	P-Channel 2.5V Specified MOSFET - Bulk (Alt: FDR836P) RoHS: Not Compliant Min Qty: 404 Container: Bulk	Americas - 0	4040:$0.7649 2020:$0.7839 1212:$0.7939 808:$0.8049 404:$0.8099
FDR836P DISTI # 512-FDR836P	ON Semiconductor	MOSFET DISC BY MFG 2/02 RoHS: Not compliant	0
FDR836P	Fairchild Semiconductor Corporation	Small Signal Field-Effect Transistor, 6.1A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Not Compliant	15000	1000:$0.8200 500:$0.8600 100:$0.8900 25:$0.9300 1:$1.0000

Related products

Image	Part #	Description
	Mfr.#: FDR6580 OMO.#: OMO-FDR6580	MOSFET SSOT-8 N-CH 2.5V
	Mfr.#: FDR840P OMO.#: OMO-FDR840P	MOSFET SSOT-8 P-CH 2.5V
	Mfr.#: FDR838P OMO.#: OMO-FDR838P	MOSFET SSOT-8 P-CH -20V
	Mfr.#: FDR-L60028SC OMO.#: OMO-FDR-L60028SC-1190	New and Original
	Mfr.#: FDR54E OMO.#: OMO-FDR54E-1190	New and Original
	Mfr.#: FDR54U OMO.#: OMO-FDR54U-1190	New and Original
	Mfr.#: FDR6674A-NL OMO.#: OMO-FDR6674A-NL-1190	New and Original
	Mfr.#: FDR6678AF40 OMO.#: OMO-FDR6678AF40-1190	New and Original
	Mfr.#: FDR840P-ND(FDS840P) OMO.#: OMO-FDR840P-ND-FDS840P--1190	New and Original
	Mfr.#: FDR5533-120-01 OMO.#: OMO-FDR5533-120-01-1190	New and Original

Availability

Stock:: Available
On Order:: 3500
Enter Quantity:

Current price of FDR836P is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$0.00~~; ~~$0.00~~

10: ~~$0.00~~; ~~$0.00~~

100: ~~$0.00~~; ~~$0.00~~

500: ~~$0.00~~; ~~$0.00~~

1000: ~~$0.00~~; ~~$0.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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FDR836P

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes