IRFS33N15DPBF

Mfr. #:: IRFS33N15DPBF
Manufacturer:: Infineon / IR
Description:: MOSFET 150V 1 N-CH HEXFET 56mOhms 60nC
Lifecycle:: New from this manufacturer.
Datasheet:: IRFS33N15DPBF Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: IRFS33N15DPBF Datasheet IRFS33N15DPBF Datasheet (P4-P6)IRFS33N15DPBF Datasheet (P7-P9)IRFS33N15DPBF Datasheet (P10-P12)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: TO-252-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 150 V

Id - Continuous Drain Current:: 33 A

Rds On - Drain-Source Resistance:: 56 mOhms

Vgs - Gate-Source Voltage:: 30 V

Qg - Gate Charge:: 60 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 175 C

Pd - Power Dissipation:: 3.8 W

Configuration:: Single

Channel Mode:: Enhancement

Packaging:: Tube

Height:: 2.3 mm

Length:: 6.5 mm

Transistor Type:: 1 N-Channel

Type:: Smps MOSFET

Width:: 6.22 mm

Brand:: Infineon / IR

Fall Time:: 21 ns

Product Type:: MOSFET

Rise Time:: 38 ns

Factory Pack Quantity:: 50

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 23 ns

Typical Turn-On Delay Time:: 13 ns

Part # Aliases:: SP001571762

Unit Weight:: 0.139332 oz

Tags: IRFS33N, IRFS33, IRFS3, IRFS, IRF

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRFS33N15DPBF Description

***ical: Trans MOSFET N-CH 150V 33A 3-Pin(2+Tab) D2PAK

***ernational Rectifier: 150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

***ied Electronics & Automation: MOSFET, 150V, 33A, 56 MOHM, 60 NC QG, D2-PAK

***i-Key: MOSFET N-CH 150V 33A D2PAK

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:150V; Continuous Drain Current, Id:33A; On Resistance, Rds(on):56mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2-PAK ;RoHS Compliant: Yes

Market price

Part #	Mfg.	Description	Stock	Price
IRFS33N15DPBF DISTI # IRFS33N15DPBF-ND	Infineon Technologies AG	MOSFET N-CH 150V 33A D2PAK RoHS: Compliant Min Qty: 3200 Container: Tube	Limited Supply - Call
IRFS33N15DPBF DISTI # 70018336	Infineon Technologies AG	MOSFET,150V,33A,56 MOHM,60 NC QG,D2-PAK RoHS: Compliant	0	3200:$3.0000 6400:$2.9400 16000:$2.8500 32000:$2.7300 80000:$2.5500
IRFS33N15DPBF DISTI # 942-IRFS33N15DPBF	Infineon Technologies AG	MOSFET 150V 1 N-CH HEXFET 56mOhms 60nC RoHS: Compliant	0

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	Mfr.#: IRFS3307PBF OMO.#: OMO-IRFS3307PBF-INFINEON-TECHNOLOGIES	MOSFET N-CH 75V 120A D2PAK
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	Mfr.#: IRFS3307ZTRRPBF OMO.#: OMO-IRFS3307ZTRRPBF-INFINEON-TECHNOLOGIES	RF Bipolar Transistors MOSFET 75V 1 N-CH HEXFET 5.8mOhms 79nC

Availability

Stock:: Available
On Order:: 1500
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Current price of IRFS33N15DPBF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

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IRFS33N15DPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes