HGTG5N120BND

Mfr. #:: HGTG5N120BND
Manufacturer:: ON Semiconductor
Description:: IGBT Transistors 21a 1200V IGBT NPT Series N-Ch
Lifecycle:: New from this manufacturer.
Datasheet:: HGTG5N120BND Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer: Fairchild Semiconductor

Product Category: IGBTs - Single

Series: -

Packaging: Tube

Part-Aliases: HGTG5N120BND_NL

Unit-Weight: 0.225401 oz

Mounting-Style: Through Hole

Package-Case: TO-247-3

Input-Type: Standard

Mounting-Type: Through Hole

Supplier-Device-Package: TO-247

Configuration: Single

Power-Max: 167W

Reverse-Recovery-Time-trr: 65ns

Current-Collector-Ic-Max: 21A

Voltage-Collector-Emitter-Breakdown-Max: 1200V

IGBT-Type: NPT

Current-Collector-Pulsed-Icm: 40A

Vce-on-Max-Vge-Ic: 2.7V @ 15V, 5A

Switching-Energy: 450μJ (on), 390μJ (off)

Gate-Charge: 53nC

Td-on-off-25°C: 22ns/160ns

Test-Condition: 960V, 5A, 25 Ohm, 15V

Pd-Power-Dissipation: 167 W

Maximum-Operating-Temperature: + 150 C

Minimum-Operating-Temperature: - 55 C

Collector-Emitter-Voltage-VCEO-Max: 1200 V

Collector-Emitter-Saturation-Voltage: 2.45 V

Continuous-Collector-Current-at-25-C: 21 A

Gate-Emitter-Leakage-Current: +/- 250 nA

Maximum-Gate-Emitter-Voltage: +/- 20 V

Continuous-Collector-Current-Ic-Max: 21 A

Tags: HGTG5N120B, HGTG5, HGTG, HGT

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We provide 90-360 days warranty.

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

HGTG5N120BND Description

***ical: Trans IGBT Chip N-CH 1200V 21A 167000mW 3-Pin(3+Tab) TO-247 Rail

***p One Stop Global: Trans IGBT Chip N-CH 1.2KV 21A 3-Pin(3+Tab) TO-247 Rail

***inecomponents.com: 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes

***et: PWR IGBT 21A 1200V NPT N-CHANNEL W/DIODE TO-247

***ser: IGBTs 21a, 1200V, IGBT NPT Series N-Ch

***i-Key: IGBT NPT N-CH 1200V 21A TO-247

*** Source Electronics: IGBT 1200V 21A 167W TO247

***Semiconductor: 1200V, NPT IGBT

***ark: DC Collector Current:21A; Collector Emitter Saturation Voltage Vce(on):1.2kV; Power Dissipation Pd:167W; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:3Pins; Operating Temperature Max:150�C; Product Range:-; MSL:- RoHS Compliant: Yes

***rchild Semiconductor: HGTG5N120BND is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: UPS, solar inverter, motor control and power supplies.

***nell: IGBT, 1200V, 21A; Corrente di Collettore CC:21A; Tensione Saturaz Collettore-Emettitore Vce(on):2.7V; Dissipazione di Potenza Pd:167W; Tensione Collettore-Emettitore V(br)ceo:1.2kV; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2018); Corrente Ic Continua a Max:21A; Dissipazione di Potenza Max:167W; Intervallo Temperatura di Esercizio:Da -55°C a +150°C; Polarità Transistor:Canale N; Temperatura di Esercizio Min:-55°C; Tensione Vces:1.2kV; Tipo di Terminazione:Foro Passante; Tipo di Transistor:No Punch Through (NPT)

Market price

Part #	Mfg.	Description	Stock	Price
HGTG5N120BND DISTI # V36:1790_06301349	ON Semiconductor	NPTPIGBT TO247 21A 1200V	0
HGTG5N120BND DISTI # HGTG5N120BNDFS-ND	ON Semiconductor	IGBT 1200V 21A 167W TO247 RoHS: Compliant Min Qty: 1 Container: Tube	235In Stock	1350:$1.4991 900:$1.7775 450:$1.9810 10:$2.5480 1:$2.8400
HGTG5N120BND DISTI # HGTG5N120BND	ON Semiconductor	Trans IGBT Chip N-CH 1.2KV 21A 3-Pin(3+Tab) TO-247 Rail (Alt: HGTG5N120BND) RoHS: Compliant Min Qty: 1	Europe - 1275	100:€1.0900 500:€1.0900 1000:€1.0900 25:€1.1900 50:€1.1900 10:€1.3900 1:€1.4900
HGTG5N120BND DISTI # HGTG5N120BND	ON Semiconductor	Trans IGBT Chip N-CH 1.2KV 21A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: HGTG5N120BND) RoHS: Compliant Min Qty: 450 Container: Tube	Americas - 350	450:$1.0900 900:$1.0900 1800:$1.0900 2700:$1.0900 4500:$1.0900
HGTG5N120BND. DISTI # 16AC0006	Fairchild Semiconductor Corporation	DC Collector Current:21A,Collector Emitter Saturation Voltage Vce(on):1.2kV,Power Dissipation Pd:167W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:150°C,Product Range:-,MSL:- RoHS Compliant: Yes	0	2250:$1.5100 1:$1.6100
HGTG5N120BND DISTI # 512-HGTG5N120BND	ON Semiconductor	IGBT Transistors 21a 1200V IGBT NPT Series N-Ch RoHS: Compliant	0
HGTG5N120BND DISTI # HGTG5N120BND	ON Semiconductor	Transistor: IGBT,1.2kV,10A,167W,TO247-3	94	1:$2.6100 3:$2.3500 10:$2.0800 50:$1.8600
HGTG5N120BND DISTI # XSKDRABV0043248	ON SEMICONDUCTOR	RoHS: Compliant	2700 in Stock0 on Order	2700:$1.6600 450:$1.7800

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Availability

Stock:: Available
On Order:: 3500
Enter Quantity:

Current price of HGTG5N120BND is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$1.64~~; ~~$1.64~~

10: ~~$1.55~~; ~~$15.53~~

100: ~~$1.47~~; ~~$147.15~~

500: ~~$1.39~~; ~~$694.90~~

1000: ~~$1.31~~; ~~$1 308.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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HGTG5N120B 8
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HGTG5N120BND

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes