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FDP3632

FDP3632
Mfr. #:
FDP3632
Manufacturer:
ON Semiconductor / Fairchild
Description:
MOSFET 100V 80a .9 Ohms/VGS=1V
Lifecycle:
New from this manufacturer.
Datasheet:
FDP3632 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
ON Semiconductor
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-220-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
100 V
Id - Continuous Drain Current:
80 A
Rds On - Drain-Source Resistance:
7.5 mOhms
Vgs - Gate-Source Voltage:
20 V
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
310 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Tube
Height:
16.3 mm
Length:
10.67 mm
Series:
FDP3632
Transistor Type:
1 N-Channel
Type:
MOSFET
Width:
4.7 mm
Brand:
ON Semiconductor / Fairchild
Fall Time:
46 ns
Product Type:
MOSFET
Rise Time:
39 ns
Factory Pack Quantity:
800
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
96 ns
Typical Turn-On Delay Time:
30 ns
Part # Aliases:
FDP3632_NL
Unit Weight:
0.063493 oz
Tags
FDP363, FDP36, FDP3, FDP
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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***eco
Transistor MOSFET Negative Channel 100 Volt 12A 3-Pin(3+Tab) TO-220AB Tube
***Semiconductor
N-Channel PowerTrench® MOSFET 100V, 80A, 9mΩ. Recommended replacement is FDP090N10
***p One Stop Japan
Trans MOSFET N-CH 100V 12A Automotive 3-Pin(3+Tab) TO-220AB Tube
***ical
Trans MOSFET N-CH 100V 12A 3-Pin (3+Tab) TO-220AB Tube
***et Europe
Trans MOSFET N-CH 100V 12A 3-Pin(3+Tab) TO-220AB Tube
***ure Electronics
N-Channel 100 V 9 mOhm PowerTrench Mosfet - TO-220AB
***et
TO-220AB, SINGLE, N-CH, 100V, 9 MOHM PWR ULTRAFET TRENCH MOS
*** Source Electronics
MOSFET N-CH 100V 80A TO-220AB
***ark
Fet 100V 9.0 Mohm To220 Rohs Compliant: Yes
***ser
MOSFETs 100V, 80a .9 Ohms/VGS=1V
***Components
MOSFET Transistor
***ment14 APAC
N CH MOSFET, 100V, 80A, TO-220AB; Transi; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:100V; On Resistance Rds(on):7.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:310W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:80A; Package / Case:TO-220AB; Power Dissipation Pd:310W; Power Dissipation Pd:310W; Pulse Current Idm:820A; SMD Marking:FDP3632; Voltage Vgs Max:4V
Part # Mfg. Description Stock Price
FDP3632
DISTI # FDP3632-ND		ON SemiconductorMOSFET N-CH 100V 80A TO-220AB
RoHS: Compliant
Min Qty: 1
Container: Tube		2208In Stock
  • 1600:$1.7245
  • 800:$1.8409
  • 100:$2.4810
  • 10:$3.0050
  • 1:$3.3600
FDP3632
DISTI # FDP3632		ON SemiconductorTrans MOSFET N-CH 100V 12A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube (Alt: FDP3632)
RoHS: Compliant
Min Qty: 1
Container: Tube		Americas - 1400
  • 1:$1.1900
  • 10:$1.0900
  • 25:$1.0900
  • 50:$1.0900
  • 100:$1.0900
  • 500:$1.0900
  • 1000:$1.0900
FDP3632Fairchild Semiconductor CorporationPower Field-Effect Transistor, 12A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant		9511
  • 1000:$1.3800
  • 500:$1.4500
  • 100:$1.5100
  • 25:$1.5800
  • 1:$1.7000
FDP3632
DISTI # 512-FDP3632		ON SemiconductorMOSFET 100V 80a .9 Ohms/VGS=1V
RoHS: Compliant		1048
  • 1:$2.8100
  • 10:$2.3900
  • 100:$2.0700
  • 250:$1.9600
  • 500:$1.7600
FDP3632_Q
DISTI # 512-FDP3632_Q		ON SemiconductorMOSFET 100V 80a .9 Ohms/VGS=1V
RoHS: Not compliant		0
    FDP3632Fairchild Semiconductor Corporation 22
      FDP3632
      DISTI # 6714828P      		ON SemiconductorMOSFET N-CHANNEL 100V 12A TO220AB, TU12
      • 10:£2.1500
      • 20:£1.9400
      FDP3632
      DISTI # FDP3632      		ON SemiconductorTransistor: N-MOSFET,unipolar,100V,12A,310W,TO220AB68
      • 1:$3.9800
      • 3:$3.4100
      • 10:$2.7400
      • 25:$2.4700
      FDP3632Fairchild Semiconductor CorporationPower Field-Effect Transistor, 12A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
      RoHS: Not Compliant      		Europe - 100
        FDP3632
        DISTI # 1095015        		ON Semiconductor 
        RoHS: Compliant        		0
        • 500:$2.7900
        • 250:$3.1000
        • 100:$3.2800
        • 10:$3.7800
        • 1:$4.4500
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        Availability
        Stock:
        851
        On Order:
        2834
        Enter Quantity:
        Current price of FDP3632 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
        Reference price (USD)
        Quantity
        Unit Price
        Ext. Price
        1
        $2.92
        $2.92
        10
        $2.48
        $24.80
        100
        $2.15
        $215.00
        250
        $2.04
        $510.00
        500
        $1.83
        $915.00
        1000
        $1.58
        $1 580.00
        Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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