IXFP14N60P

IXFP14N60P
Mfr. #:
IXFP14N60P
Manufacturer:
Littelfuse
Description:
MOSFET 600V 14A
Lifecycle:
New from this manufacturer.
Datasheet:
IXFP14N60P Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFP14N60P DatasheetIXFP14N60P Datasheet (P4-P6)
ECAD Model:
More Information:
IXFP14N60P more Information
Product Attribute
Attribute Value
Manufacturer:
IXYS
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-220-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
600 V
Id - Continuous Drain Current:
14 A
Rds On - Drain-Source Resistance:
550 mOhms
Vgs - Gate-Source Voltage:
30 V
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
300 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
HiPerFET
Packaging:
Tube
Height:
9.15 mm
Length:
10.66 mm
Series:
IXFP14N60
Transistor Type:
1 N-Channel
Width:
4.83 mm
Brand:
IXYS
Forward Transconductance - Min:
13 S
Fall Time:
26 ns
Product Type:
MOSFET
Rise Time:
27 ns
Factory Pack Quantity:
50
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
70 ns
Typical Turn-On Delay Time:
23 ns
Unit Weight:
0.081130 oz
Tags
IXFP14, IXFP1, IXFP, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***inecomponents.com
Trans MOSFET N-CH 600V 14A 3-Pin (3+Tab) TO-220
***ark
MOSFET, N, TO-220; Transistor type:HiPerFET; Voltage, Vds typ:600V; Current, Id cont:14A; Resistance, Rds on:0.55R; Voltage, Vgs Rds on measurement:10V; Voltage, Vgs th typ:5.5V; Case style:TO-220 (SOT-78B); Capacitance, Ciss RoHS Compliant: Yes
***nell
MOSFET, N, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 14A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 550mohm; Threshold Voltage Vgs Typ: 5.5V; Power Dissipation Pd: 300W; Transistor Case Style: TO-220; No. of Pins: 3; Capacitance Ciss Typ: 2300pF; Junction to Case Thermal Resistance A: 0.42°C/W; N-channel Gate Charge: 38nC; Package / Case: TO-220 (SOT-78B); Power Dissipation Pd: 300W; Reverse Recovery Time trr Max: 200ns; Termination Type: Through Hole; Transistor Type: High Performance FET; Voltage Vds Typ: 600V; Voltage Vgs Rds on Measurement: 10V
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
HiPerFET™ Power MOSFETs
IXYS  Polar HT™/HV™ HiPerFET™ Power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
Part # Mfg. Description Stock Price
IXFP14N60P
DISTI # IXFP14N60P-ND
IXYS CorporationMOSFET N-CH 600V 14A TO-220
RoHS: Compliant
Min Qty: 1
Container: Tube
70In Stock
  • 1000:$1.8788
  • 500:$2.2277
  • 100:$2.7511
  • 50:$3.0196
  • 1:$3.7600
IXFP14N60P3
DISTI # IXFP14N60P3-ND
IXYS CorporationMOSFET N-CH 600V 14A TO-220AB
RoHS: Compliant
Min Qty: 1
Container: Tube
54In Stock
  • 1000:$1.5400
  • 500:$1.8260
  • 100:$2.2550
  • 50:$2.4750
  • 1:$3.0800
IXFP14N60P
DISTI # 747-IXFP14N60P
IXYS CorporationMOSFET 600V 14A
RoHS: Compliant
0
  • 250:$2.4600
  • 500:$2.3300
  • 1000:$1.9700
  • 2500:$1.6800
IXFP14N60P3
DISTI # 747-IXFP14N60P3
IXYS CorporationMOSFET Polar3 HiPerFETs MOSFET w/Fast Diode76
  • 1:$3.2200
  • 10:$2.8800
  • 25:$2.5000
  • 50:$2.4500
  • 100:$2.3600
  • 250:$2.0100
  • 500:$1.9100
  • 1000:$1.6100
  • 2500:$1.3800
IXFP14N60PIXYS CorporationTrans MOSFET N-CH 600V 14A 3-Pin(3+Tab) TO-220
RoHS: Compliant
60 In Stock
  • 5000:$1.5500
  • 2500:$1.6100
  • 1000:$1.6900
  • 500:$2.0000
  • 250:$2.2300
  • 100:$2.4800
  • 25:$2.7200
  • 1:$3.0200
IXFP14N60P3
DISTI # 8024420P
IXYS CorporationMOSFET N 600V 14A POLAR3 HIPERFET TO220, TU130
  • 10:£1.6920
  • 50:£1.5780
  • 100:£1.4680
  • 200:£1.3960
IXFP14N60P
DISTI # 1427332
IXYS CorporationMOSFET, N, TO-220
RoHS: Compliant
64
  • 1:£3.3800
  • 10:£2.4200
  • 100:£2.2100
  • 250:£1.8600
  • 500:£1.7600
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Availability
Stock:
Available
On Order:
3500
Enter Quantity:
Current price of IXFP14N60P is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
50
$2.99
$149.50
100
$2.88
$288.00
250
$2.46
$615.00
500
$2.33
$1 165.00
1000
$1.97
$1 970.00
2500
$1.68
$4 200.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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