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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| Part # | Mfg. | Description | Stock | Price |
|---|---|---|---|---|
| IRFB59N10DPBF DISTI # IRFB59N10DPBF-ND | Infineon Technologies AG | MOSFET N-CH 100V 59A TO-220AB RoHS: Compliant Min Qty: 1 Container: Tube | 709In Stock |
|
| IRFB59N10DPBF DISTI # SP001560232 | Infineon Technologies AG | Trans MOSFET N-CH 100V 59A 3-Pin(3+Tab) TO-220AB (Alt: SP001560232) RoHS: Compliant Min Qty: 50 | Europe - 3800 |
|
| IRFB59N10DPBF DISTI # IRFB59N10DPBF | Infineon Technologies AG | Trans MOSFET N-CH 100V 59A 3-Pin(3+Tab) TO-220AB (Alt: IRFB59N10DPBF) RoHS: Compliant Min Qty: 3000 | Asia - 0 |
|
| IRFB59N10DPBF DISTI # IRFB59N10DPBF | Infineon Technologies AG | Trans MOSFET N-CH 100V 59A 3-Pin(3+Tab) TO-220AB - Bulk (Alt: IRFB59N10DPBF) Min Qty: 385 Container: Bulk | Americas - 0 |
|
| IRFB59N10DPBF DISTI # IRFB59N10DPBF | Infineon Technologies AG | Trans MOSFET N-CH 100V 59A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRFB59N10DPBF) RoHS: Compliant Min Qty: 3000 Container: Tube | Americas - 0 |
|
| IRFB59N10DPBF DISTI # 38K2494 | Infineon Technologies AG | MOSFET Transistor, N Channel, 59 A, 100 V, 25 mohm, 10 V, 5.5 V RoHS Compliant: Yes | 106 |
|
| IRFB59N10DPBF DISTI # 70017022 | Infineon Technologies AG | MOSFET,Power,N-Ch,VDSS 100V,RDS(ON) 0.025Ohm,ID 59A,TO-220AB,PD 200W,VGS +/-30V RoHS: Compliant | 1516 |
|
| IRFB59N10DPBF | Infineon Technologies AG | Single N-Channel 100 V 25 mOhm 114 nC HEXFET Power Mosfet - TO-220-3 RoHS: Compliant | 2000Tube |
|
| IRFB59N10DPBF DISTI # 942-IRFB59N10DPBF | Infineon Technologies AG | MOSFET MOSFT 100V 59A 25mOhm 76nC RoHS: Compliant | 984 |
|
| IRFB59N10DPBF | International Rectifier | Power Field-Effect Transistor, 59A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant | 1100 |
|
| IRFB59N10DPBF DISTI # IRFB59N10DPBF | Infineon Technologies AG | Transistor: N-MOSFET,unipolar,100V,59A,200W,TO220AB | 71 |
|
| IRFB59N10DPBF | International Rectifier | RoHS: Compliant | 239 | |
| IRFB59N10DPBF DISTI # 8648786 | Infineon Technologies AG | MOSFET, N, 100V, 59A, TO-220 | 119 |
|
| IRFB59N10DPBF DISTI # 8648786 | Infineon Technologies AG | MOSFET, N, 100V, 59A, TO-220 RoHS: Compliant | 106 |
|
| IRFB59N10DPBF DISTI # XSFP00000030495 | Infineon Technologies AG | RoHS: Compliant | 1600 in Stock0 on Order |
|
| IRFB59N10DPBF DISTI # XSKDRABV0042861 | Infineon Technologies AG | Power Field-EffectTransistor,51AI(D),150V,0.032ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET,TO-220AB RoHS: Compliant | 1450 in Stock0 on Order |
|
| IRFB59N10DPBF DISTI # XSKDRABS0006798 | Infineon Technologies AG | Power Field-Effect Transistor,75AI(D),100V,0.01ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET,TO-220AB RoHS: Compliant | 1600 in Stock0 on Order |
|
| Image | Part # | Description |
|---|---|---|
|
Mfr.#: FB59N100 OMO.#: OMO-FB59N100-1190 |
New and Original |
|
|
Mfr.#: FB59N10D OMO.#: OMO-FB59N10D-1190 |
New and Original |