R6015ANX

Mfr. #:: R6015ANX
Manufacturer:: ROHM Semiconductor
Description:: MOSFET RECOMMENDED ALT 755-R6015KNX
Lifecycle:: New from this manufacturer.
Datasheet:: R6015ANX Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: ROHM Semiconductor

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: Through Hole

Package / Case:: TO-220FP-3

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 600 V

Id - Continuous Drain Current:: 15 A

Rds On - Drain-Source Resistance:: 300 mOhms

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 50 W

Packaging:: Bulk

Brand:: ROHM Semiconductor

Forward Transconductance - Min:: 4.5 S

Product Type:: MOSFET

Factory Pack Quantity:: 500

Subcategory:: MOSFETs

Part # Aliases:: R6015ANX

Unit Weight:: 0.211644 oz

Tags: R6015ANX, R6015A, R6015, R601, R60

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

R6015ANX Description

***et Europe: Trans MOSFET N-CH 600V 15A 3-Pin(3+Tab) TO-220FM Bulk

***S: French Electronic Distributor since 1988

***emi: Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 16 A, 260 mΩ, TO-220F

***ure Electronics: N-Channel 600 V 0.26 Ohm Flange Mount SuperFET Mosfet TO-220F

***Yang: Trans MOSFET N-CH 600V 16A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube

***r Electronics: Power Field-Effect Transistor, 16A I(D), 600V, 0.26ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***nell: MOSFET, N, TO-220F; Transistor type:SuperFET; Voltage, Vds typ:600V; Current, Id cont:16A; Resistance, Rds on:0.22ohm; Voltage, Vgs Rds on measurement:10V; Voltage, Vgs th typ:5V; Case style:TO-220F; Current, Idm pulse:48A; Pins, No. of:3; Power dissipation:37.9W; Termination Type:Through Hole; Transistor polarity:N; Voltage, Vds max:600V; Voltage, Vgs th max:5V

***rchild Semiconductor: SuperFET® is, Fairchild's proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.

***icroelectronics: N-channel 600 V, 0.2 Ohm, 16 A MDmesh(TM) II Power MOSFET in TO-220FP

*** Source Electronics: Trans MOSFET N-CH 600V 16A 3-Pin(3+Tab) TO-220FP Tube / MOSFET N-CH 600V 17A TO220FP

***el Electronic: STMICROELECTRONICS STF22NM60N Power MOSFET, N Channel, 16 A, 600 V, 0.2 ohm, 10 V, 3 V

***enic: 600V 16A 30W 220m´Î@10V8A 4V@100Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS

***ark: MOSFET, N CHANNEL, 600V, 16A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:16A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; MSL:- RoHS Compliant: Yes

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 16A I(D), 600V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***emi: Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 11 A, 380 mΩ, TO-220F

***ure Electronics: Single N-Channel 600 V 36 W 52 nC Silicon Through Hole Mosfet - TO-220F

*** Stop Electro: Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: MOSFET, N, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:600V; On Resistance Rds(on):320mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:36W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220F; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:11A; Package / Case:TO-220F; Power Dissipation Pd:36W; Power Dissipation Pd:36W; Pulse Current Idm:30A; Termination Type:Through Hole; Voltage Vds Typ:600V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V

***rchild Semiconductor: SuperFET® MOSFET is Fairchild Semiconductor’s first genera-tion of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switch-ing performance, dv/dt rate and higher avalanche energy. Con-sequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

***th Star Micro: SuperFETTM is a new generation of high voltage MOSFETs from Fairchild with outstanding low on-resistance and low gate charge performance, a result of proprietary technology utilizing advanced charge balance mechanisms. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. Product Highlights: 650V @Tj = 150C Typ. Rds(on)=0.32W Ultra low gate charge (typ. Qg=40nC) Low effective output capacitance (typ. Coss.eff=95pF) 100% avalanche tested

***emi: N-Channel Power MOSFET, SUPREMOS®, FAST, 600 V, 10.8 A, 299 mΩ, TO-220F

***Yang: Trans MOSFET N-CH 600V 10.8A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube

***enic: 600V 10.8A 299m´Î@10V5.4A 32.1W 4V@250Ã×A N Channel TO-220F-3 MOSFETs ROHS

***r Electronics: Power Field-Effect Transistor, 10.8A I(D), 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: MOSFET, N CH, 600V, 10.8A, TO220F; Transistor Polarity:N Channel; Continuous Drain Current Id:10.8A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.255ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:32.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220F; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Pulse Current Idm:32.4A

***rchild Semiconductor: The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

***ark: MOSFET, N-CH, 500V, 18A, TO-220FP; Transistor Polarity:N Channel; Continuous Dra

***or: MOSFET N-CH 500V 18A TO220

*** Europe: N-CH SINGLE 500V TO220FP

***: N-CHANNEL 500V

***nell: MOSFET, N-CH, 500V, 18A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.23ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:39W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220FP; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C

***ure Electronics: N-Channel 600 V 220 mOhm Flange Mount FDmesh II Power Mosfet - TO-220FP

***icroelectronics: N-channel 600 V, 0.17 Ohm typ., 17 A, FDmesh(TM) II Power MOSFET (whit fast diode) in TO-220FP package

***ark: Power Mosfet, N Channel, 17 A, 600 V, 0.17 Ohm, 10 V, 4 V Rohs Compliant: Yes

***et: Trans MOSFET N-CH 600V 17A 3-Pin(3+Tab) TO-220FP Tube

***ponent Stockers USA: 17 A 600 V 0.22 ohm N-CHANNEL Si POWER MOSFET TO-220AB

***r Electronics: Power Field-Effect Transistor, 17A I(D), 600V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***nell: MOSFET, N CH, 600V, 17A, TO 220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 17A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.17ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Pow

Market price

Part #	Mfg.	Description	Stock	Price
R6015ANX DISTI # R6015ANX-ND	ROHM Semiconductor	MOSFET N-CH 600V 15A TO-220FM RoHS: Compliant Min Qty: 1 Container: Bulk	320In Stock	2500:$2.5802 1000:$2.7160 500:$3.2204 100:$3.7830 10:$4.6170 1:$5.1400
R6015ANX DISTI # R6015ANX	ROHM Semiconductor	Trans MOSFET N-CH 600V 15A 3-Pin(3+Tab) TO-220FM Bulk (Alt: R6015ANX) RoHS: Compliant Min Qty: 500 Container: Bulk	Europe - 0	5000:€1.4900 3000:€1.5900 2000:€1.6900 500:€1.7900 1000:€1.7900
R6015ANX DISTI # R6015ANX	ROHM Semiconductor	Trans MOSFET N-CH 600V 15A 3-Pin(3+Tab) TO-220FM Bulk - Bulk (Alt: R6015ANX) RoHS: Compliant Min Qty: 500 Container: Bulk	Americas - 0	5000:$1.7900 3000:$1.8900 2000:$1.9900 1000:$2.0900 500:$2.1900
R6015ANX DISTI # 755-R6015ANX	ROHM Semiconductor	MOSFET RECOMMENDED ALT 755-R6015KNX RoHS: Compliant	0
R6015ANX DISTI # 8267548	ROHM Semiconductor	ROHMMOSFETR6015ANX, PK	110	40:£3.2050 20:£3.5600 2:£3.9850
R6015ANX	ROHM Semiconductor		64	45:$5.2725 13:$5.7000 1:$8.5500
R6015ANX	ROHM Semiconductor	RoHS(ship within 1day)	80	1:$5.6200 10:$4.2200 50:$3.7200 100:$3.1700 500:$2.9500 1000:$2.8500

Image	Part #	Description
	Mfr.#: R6015FNX OMO.#: OMO-R6015FNX	MOSFET Trans MOSFET N-CH 600V 15A
	Mfr.#: R6015ANX OMO.#: OMO-R6015ANX	MOSFET RECOMMENDED ALT 755-R6015KNX
	Mfr.#: R6018ANJTL OMO.#: OMO-R6018ANJTL-ROHM-SEMI	MOSFET NCH MOSFET T/R 10V DRIVE
	Mfr.#: R6015ANJTL OMO.#: OMO-R6015ANJTL-ROHM-SEMI	MOSFET TRANS MOSFET NCH 600V 15A 3PIN
	Mfr.#: R6012ANJTL OMO.#: OMO-R6012ANJTL-ROHM-SEMI	MOSFET TRANS MOSFET NCH 600V 12A 3PIN
	Mfr.#: R6013 OMO.#: OMO-R6013-1190	R6013 HALOGEN FREE, 4" X 242 1/2" CORE / Roll of 242 Feet
	Mfr.#: R6018JNXC7G OMO.#: OMO-R6018JNXC7G-1190	R6018JNX IS A POWER MOSFET WITH
	Mfr.#: R6010120XXYA OMO.#: OMO-R6010120XXYA-1190	New and Original
	Mfr.#: R6010ANX TK10A60 OMO.#: OMO-R6010ANX-TK10A60-1190	New and Original
	Mfr.#: R6012FNJTL OMO.#: OMO-R6012FNJTL-ROHM-SEMI	MOSFET N-CH 600V 12A LPT

R6015ANX

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes