 | | | |
| PartNumber | 2SD2012 | 2SD2012(F) | 2SD2012(F,M) |
| Description | Bipolar Transistors - BJT NPN Silcon Pwr Trans | ||
| Manufacturer | STMicroelectronics | - | TOSHIBA |
| Product Category | Bipolar Transistors - BJT | - | IC Chips |
| RoHS | Y | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220F-3 | - | - |
| Transistor Polarity | NPN | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 60 V | - | - |
| Collector Base Voltage VCBO | 60 V | - | - |
| Emitter Base Voltage VEBO | 7 V | - | - |
| Collector Emitter Saturation Voltage | 0.4 V | - | - |
| Maximum DC Collector Current | 3 A | - | - |
| Gain Bandwidth Product fT | 3 MHz | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | 2SD2012 | - | - |
| DC Current Gain hFE Max | 320 | - | - |
| Height | 9.39 mm (Max) | - | - |
| Length | 10.36 mm (Max) | - | - |
| Packaging | Tube | - | - |
| Width | 4.9 mm (Max) | - | - |
| Brand | STMicroelectronics | - | - |
| DC Collector/Base Gain hfe Min | 20 | - | - |
| Pd Power Dissipation | 25 W | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 50 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.127339 oz | - | - |