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2SD2012

2SD2012
Mfr. #:
2SD2012
Manufacturer:
STMicroelectronics
Description:
Bipolar Transistors - BJT NPN Silcon Pwr Trans
Lifecycle:
New from this manufacturer.
Datasheet:
2SD2012 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
2SD2012 Datasheet2SD2012 Datasheet (P4-P5)
ECAD Model:
More Information:
2SD2012 more Information 2SD2012 Product Details
Product Attribute
Attribute Value
Manufacturer:
STMicroelectronics
Product Category:
Bipolar Transistors - BJT
RoHS:
Y
Mounting Style:
Through Hole
Package / Case:
TO-220F-3
Transistor Polarity:
NPN
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
60 V
Collector- Base Voltage VCBO:
60 V
Emitter- Base Voltage VEBO:
7 V
Collector-Emitter Saturation Voltage:
0.4 V
Maximum DC Collector Current:
3 A
Gain Bandwidth Product fT:
3 MHz
Minimum Operating Temperature:
- 65 C
Maximum Operating Temperature:
+ 150 C
Series:
2SD2012
DC Current Gain hFE Max:
320
Height:
9.39 mm (Max)
Length:
10.36 mm (Max)
Packaging:
Tube
Width:
4.9 mm (Max)
Brand:
STMicroelectronics
DC Collector/Base Gain hfe Min:
20
Pd - Power Dissipation:
25 W
Product Type:
BJTs - Bipolar Transistors
Factory Pack Quantity:
50
Subcategory:
Transistors
Unit Weight:
0.127339 oz
Tags
2SD2012, 2SD201, 2SD20, 2SD2, 2SD
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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Bipolar (Bjt) Single Transistor, Npn, 60 V, 3 Mhz, 25 W, 3 A, 20 Rohs Compliant: Yes
***ical
Trans GP BJT NPN 60V 3A 3-Pin (3+Tab) TO-220 Tube
***nell
TRANSISTOR, NPN, 60V, 3A, TO-220F; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:3MHz; Power Dissipation Pd:25W; DC Collector Current:3A; DC Current Gain hFE:20; Operating Temperature Max:150°C; Transistor Case Style:TO-220F; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)
Part # Mfg. Description Stock Price
2SD2012(F,J)
DISTI # C1S751201102661		Toshiba America Electronic ComponentsGP BJT
RoHS: Not Compliant		6640
  • 2000:$0.9200
  • 1000:$0.9430
  • 500:$1.1200
  • 100:$1.1700
  • 50:$1.2300
2SD2012
DISTI # 497-5900-5-ND		STMicroelectronicsTRANS NPN 60V 3A TO-220F
RoHS: Compliant
Min Qty: 2000
Container: Tube		Limited Supply - Call
    2SD2012
    DISTI # 511-2SD2012    		STMicroelectronicsBipolar Transistors - BJT NPN Silcon Pwr Trans
    RoHS: Compliant    		0
      2SD2012(F,M)
      DISTI # N/A      		Toshiba America Electronic ComponentsBipolar Transistors - BJT X35 Pb-F POWER TRANSISTOR TO-220NIS MOQ=500 V=60 PD=25W F=1MHZ
      RoHS: Compliant      		0
        2SD2012Toshiba America Electronic ComponentsBipolar Junction Transistor, NPN Type, TO-220VAR304
        • 201:$0.2100
        • 45:$0.3000
        • 1:$0.6000
        2SD2012Toshiba America Electronic ComponentsBipolar Junction Transistor, NPN Type, TO-220VAR71
        • 45:$0.3000
        • 9:$0.4500
        • 1:$0.6000
        2SD2012STMicroelectronicsBipolar Junction Transistor, NPN Type, TO-220VAR14
        • 8:$0.5600
        • 1:$0.7000
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        Mfr.#: 2SD780-D-T1

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        		 New and Original
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        Mfr.#: 2SD882L-P-T60-K

        OMO.#: OMO-2SD882L-P-T60-K-1190

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        Availability
        Stock:
        Available
        On Order:
        5500
        Enter Quantity:
        Current price of 2SD2012 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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