2SD2012
NPN SILICON POWER TRANSISTOR
■ HIGH DC CURRENT GAIN
■ LOW SATURATION VOLTAGE
■ INSULATED PACKAGE FOR EASY
MOUNTING
APPLICATIONS
■ GENERAL PURPOSE POWER AMPLIFIERS
■ GENERAL PURPOSE SWITCHING
DESCRIPTION
The 2SD2012 is a silicon NPN power transistor
housed in TO-220F insulated package.
It is inteded for power linear and switching
applications.
®
INTERNAL SCHEMATIC DIAGRAM
October 2003
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CBO
Collector-Base Voltage (I
E
= 0) 60 V
V
CEO
Collector-Emitter Voltage (I
B
= 0) 60 V
V
EBO
Emitter-Base Voltage (I
C
= 0) 7 V
I
C
Collector Current 3 A
I
CM
Collector Peak Current (t
p
< 5 ms) 6 A
I
B
Base Current 0.5 A
P
tot
Total Dissipation at T
c
≤ 25
o
C
25 W
V
isol
Insulation Withstand Voltage (RMS) from All
Three Leads to Exernal Heatsink
1500 V
T
stg
Storage Temperature -65 to 150
o
C
T
j
Max. Operating Junction Temperature 150
o
C
1
2
3
TO-220F
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