PartNumber | BFP540FESDH6327XTSA1 | BFP 540FESD H6327 | BFP540FESDH6327XT |
Description | RF Bipolar Transistors RF BIP TRANSISTOR | RF Bipolar Transistors RF BIP TRANSISTOR | *** FREE SHIPPING ORDERS OVER $100 *** |
Manufacturer | Infineon | Infineon | - |
Product Category | RF Bipolar Transistors | RF Bipolar Transistors | - |
RoHS | Y | Y | - |
Series | BFP540 | BFP540 | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | TSFP-4 | TSFP-4 | - |
Packaging | Reel | Reel | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Product Type | RF Bipolar Transistors | RF Bipolar Transistors | - |
Factory Pack Quantity | 3000 | 3000 | - |
Subcategory | Transistors | Transistors | - |
Part # Aliases | 540FESD BFP BFP54FESDH6327XT H6327 SP000745300 | BFP540FESDH6327XTSA1 BFP54FESDH6327XT SP000745300 | - |
Transistor Type | - | Bipolar | - |
Transistor Polarity | - | NPN | - |
DC Collector/Base Gain hfe Min | - | 50 | - |
Collector Emitter Voltage VCEO Max | - | 4.5 V | - |
Emitter Base Voltage VEBO | - | 1 V | - |
Continuous Collector Current | - | 80 mA | - |
Minimum Operating Temperature | - | - 65 C | - |
Maximum Operating Temperature | - | + 150 C | - |
Configuration | - | Single | - |
Operating Frequency | - | 30 GHz | - |
Type | - | RF Bipolar Small Signal | - |
Pd Power Dissipation | - | 250 mW | - |
Unit Weight | - | 0.000066 oz | - |