BFP540FESDH6327XTSA1

Mfr. #:: BFP540FESDH6327XTSA1
Manufacturer:: Infineon Technologies
Description:: RF Bipolar Transistors RF BIP TRANSISTOR
Lifecycle:: New from this manufacturer.
Datasheet:: BFP540FESDH6327XTSA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: BFP540FESDH6327XTSA1 Datasheet BFP540FESDH6327XTSA1 Datasheet (P4-P6)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: RF Bipolar Transistors

RoHS:: Y

Series:: BFP540

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: TSFP-4

Packaging:: Reel

Brand:: Infineon Technologies

Product Type:: RF Bipolar Transistors

Factory Pack Quantity:: 3000

Subcategory:: Transistors

Part # Aliases:: 540FESD BFP BFP54FESDH6327XT H6327 SP000745300

Tags: BFP540FESDH, BFP540FES, BFP540FE, BFP540F, BFP540, BFP54, BFP5, BFP

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We guarantee 100% customer satisfaction.

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

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Vacuum Packaging with PL

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BFP540FESDH6327XTSA1 Description

***ineon SCT: NPN Silicon RF Transistor for ESD protected high gain low noise amplifier, TSFP-4-1, RoHS

***roFlash: RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, S Band, Silicon, NPN

*** Electronic Components: Trans GP BJT NPN 4.5V 0.08A 4-Pin TSFP T/R (Alt: BFP 540FESD H6327)

***nell: RF TRANSISTOR, NPN, 4.5V, 30GHZ, TSFP; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 4.5V; Transition Frequency ft: 30GHz; Power Dissipation Pd: 250mW; DC Collector Current: 80mA; DC Current Gain hFE: 50hFE; RF Transistor Case: TSFP; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon: NPN Silicon RF Transistor for ESD protected high gain low noise amplifier | Summary of Features: Excellent ESD performance typical value 1000 V (HBM) Outstanding Gms = 20 dB Noise Figure F = 0.9 dB; SIEGET 45 - Line; Pb-free (ROHS compliant) package; Qualification report according to AEC-Q101 available; * Short term description | Target Applications: Wireless Communications; For amplifier and oscillator applications in RF Front-end

***ure Electronics: DTC123JKA Series 50 V 100 mA Surface Mount NPN Digital Transistor - SC-59

***ical: Trans Digital BJT NPN 50V 100mA 3-Pin SMT T/R

***ark: Transistor, Rf, Npn, 50V, 250Mhz, Sot-346-3; Transistor Polarity:single Npn; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:-; Continuous Collector Current:100Ma; Base Input Resistor R1:2.2Kohm Rohs Compliant: Yes

***nell: TRANSISTOR DIGITAL SC-59 100MA NPN; Digital Transistor Polarity: Single NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 2.2kohm; Base-Emitter Resistor R2: 47kohm; Resistor Ratio, R1 / R2: 0.047(Ratio); RF Transistor Case: SC-59; No. of Pins: 3 Pin; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Current Ic Continuous a Max: 100mA; DC Collector Current: 100mA; DC Current Gain hFE: 80hFE; Gain Bandwidth ft Typ: 250MHz; Hfe Min: 80; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Pd: 200mW; Termination Type: Surface Mount Device; Transistor Case Style: SOT-346; Transistor Type: General Purpose; Transition Frequency ft: 250MHz

***ical: Trans Digital BJT NPN 50V 100mA 300mW 6-Pin SMT T/R

***ure Electronics: IMH11A Series 50 V 100 mA Surface Mount Dual NPN Digital Transistor - SC-74

***ment14 APAC: Transistor DUAL SC-74 NPN/NPN; Digital Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Current Ic:100mA;

***ark: TRANSISTOR DUAL SC-74 NPN/NPN; Transistor Type:General Purpose; Transistor Polarity:Dual NPN; Collector-to-Emitter Breakdown Voltage:50V; Current Ic Continuous a Max:100mA; Power Dissipation:300mW; Min Hfe:30; ft, Typ:250MHz; Case ;RoHS Compliant: Yes

***nell: TRANSISTOR DUAL SC-74 NPN/NPN; Digital Transistor Polarity: Dual NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 10kohm; Base-Emitter Resistor R2: 10kohm; Resistor Ratio, R1 / R2: -; RF Transistor Case: SOT-457; No. of Pins: 6 Pin; Product Range: IMH11A Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Current Ic Continuous a Max: 100mA; DC Collector Current: 100mA; DC Current Gain hFE: 30hFE; Gain Bandwidth ft Typ: 250MHz; Hfe Min: 30; Module Configuration: Dual; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Pd: 300mW; Transistor Case Style: SOT-457; Transistor Polarity: NPN; Transistor Type: General Purpose; Transition Frequency ft: 250MHz

*** Stop Electro: Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

***ure Electronics: DTC143ZKA Series 50 V 100 mA Surface Mount NPN Digital Transistor - SC-59

***p One Stop Global: Trans Digital BJT NPN 50V 100mA 3-Pin SMT T/R

***ark: Transistor Polarity:Single NPN; Collector Emitter Voltage Max NPN:50V; Collector Emitter Voltage Max PNP:-; Continuous Collector Current:100mA; Base Input Resistor R1:4.7kohm; Base Emitter Resistor R2:47kohm; No. of Pins:3 Pin RoHS Compliant: Yes

***roFlash: Trans GP BJT NPN 12V 0.08A 3-Pin UFM Embossed T/R

***el Electronic: RF Bipolar Transistors Radio-Freq VHF/UHF 80mA 900mW 12V

***i-Key: RF TRANS NPN 12V 7GHZ UFM

***ure Electronics: DMC56404 Series 50 V 100 mA Surface Mount Dual NPN Transistor - SMini6-F3-B

***et: Trans Digital BJT NPN 50V 100mA 6-Pin SC-113DB Embossed T/R

***er Electronics: SC,COMPOSITE TRANSISTOR / PNP DUAL, FOR DIGITAL CIRCUITS, VCEO:50V, IC:100MA

***(Formerly Allied Electronics): DMC564040R,Dual NPN Digi Transistor,100mA 50V 10 kOhm,Ratio Of.21,6-Pin SMini6 | Panasonic Electronic Components DMC564040R

***ark: Digital Transistor Polarity:dual Npn; Collector Emitter Voltage V(Br)Ceo:50V; Continuous Collector Current Ic:100Ma; Base Input Resistor R1:10Kohm; Base-Emitter Resistor R2:47Kohm; Resistor Ratio, R1 / R2:0.21(Ratio); Product Range:-Rohs Compliant: Yes

Market price

Part #	Mfg.	Description	Stock	Price
BFP540FESDH6327XTSA1 DISTI # V72:2272_06384828	Infineon Technologies AG	Trans RF BJT NPN 4.5V 0.08A Automotive 4-Pin TSFP T/R RoHS: Compliant	3000	3000:$0.1734 1000:$0.2060 500:$0.2219 250:$0.2466 100:$0.2551 25:$0.3691 10:$0.3711 1:$0.4292
BFP540FESDH6327XTSA1 DISTI # BFP540FESDH6327XTSA1CT-ND	Infineon Technologies AG	RF TRANS NPN 5V 30GHZ 4TSFP RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	11220In Stock	1000:$0.2294 500:$0.2968 100:$0.3778 10:$0.5060 1:$0.5900
BFP540FESDH6327XTSA1 DISTI # BFP540FESDH6327XTSA1DKR-ND	Infineon Technologies AG	RF TRANS NPN 5V 30GHZ 4TSFP RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	11220In Stock	1000:$0.2294 500:$0.2968 100:$0.3778 10:$0.5060 1:$0.5900
BFP540FESDH6327XTSA1 DISTI # BFP540FESDH6327XTSA1TR-ND	Infineon Technologies AG	RF TRANS NPN 5V 30GHZ 4TSFP RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	9000In Stock	30000:$0.1677 15000:$0.1769 6000:$0.1900 3000:$0.2031
BFP540FESDH6327XTSA1 DISTI # 27526715	Infineon Technologies AG	Trans RF BJT NPN 4.5V 0.08A Automotive 4-Pin TSFP T/R RoHS: Compliant	3000	3000:$0.1734 1000:$0.2060 500:$0.2219 250:$0.2466 100:$0.2551 39:$0.3691
BFP540FESDH6327XTSA1 DISTI # BFP540FESDH6327XTSA1	Infineon Technologies AG	Trans GP BJT NPN 4.5V 0.08A 4-Pin TSFP T/R - Tape and Reel (Alt: BFP540FESDH6327XTSA1) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.1839 6000:$0.1769 12000:$0.1709 18000:$0.1669 30000:$0.1649
BFP540FESDH6327XTSA1. DISTI # 27AC0919	Infineon Technologies AG	Transistor Polarity:NPN,Collector Emitter Voltage V(br)ceo:4.5V,Transition Frequency ft:30GHz,Power Dissipation Pd:250mW,DC Collector Current:80mA,DC Current Gain hFE:50hFE,RF Transistor Case:TSFP,No. of Pins:4Pins RoHS Compliant: Yes	0	1:$0.1840 6000:$0.1770 12000:$0.1710 18000:$0.1670 30000:$0.1650
BFP540FESDH6327XTSA1 DISTI # 726-BFP540FESDH6327X	Infineon Technologies AG	RF Bipolar Transistors RF BIP TRANSISTOR RoHS: Compliant	5415	1:$0.5800 10:$0.4730 100:$0.2890 1000:$0.2230 3000:$0.1900
BFP 540FESD H6327 DISTI # 726-BFP540FESDH6327	Infineon Technologies AG	RF Bipolar Transistors RF BIP TRANSISTOR RoHS: Compliant	4107	1:$0.5800 10:$0.4730 100:$0.2890 1000:$0.2230 3000:$0.1900
BFP540FESDH6327XTSA1	Infineon Technologies AG	RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, S Band, Silicon, NPN RoHS: Compliant	1460	1000:$0.1700 500:$0.1800 100:$0.1900 25:$0.2000 1:$0.2100
BFP540FESDH6327XTSA1 DISTI # 1107135P	Infineon Technologies AG	LONOISE RF BJT NPN 4.5V 80MA 30GHZ TSFP4, RL	2880	150:£0.1470
BFP540FESDH6327XTSA1 DISTI # 2480670RL	Infineon Technologies AG	RF TRANSISTOR, NPN, 4.5V, 30GHZ, TSFP RoHS: Compliant	0	1:$0.3550
BFP540FESDH6327XTSA1 DISTI # 2480670	Infineon Technologies AG	RF TRANSISTOR, NPN, 4.5V, 30GHZ, TSFP RoHS: Compliant	100	1:$0.3550
BFP540FESDH6327XTSA1 DISTI # C1S322000560945	Infineon Technologies AG	Trans RF BJT NPN 4.5V 0.08A 250mW Automotive 4-Pin TSFP T/R RoHS: Compliant	3000	250:$0.2466 100:$0.2551 25:$0.3691 10:$0.3711
BFP540FESDH6327XTSA1 DISTI # 2480670	Infineon Technologies AG	RF TRANSISTOR, NPN, 4.5V, 30GHZ, TSFP RoHS: Compliant	0	5:£0.4050 25:£0.1560 100:£0.1520 250:£0.1470 500:£0.1460

Image	Part #	Description
	Mfr.#: BFP540FESDH6327XTSA1 OMO.#: OMO-BFP540FESDH6327XTSA1	RF Bipolar Transistors RF BIP TRANSISTOR
	Mfr.#: BFP540FESD OMO.#: OMO-BFP540FESD-INFINEON-TECHNOLOGIES	New and Original
	Mfr.#: BFP540FESD H6327 OMO.#: OMO-BFP540FESD-H6327-INFINEON-TECHNOLOGIES	New and Original
	Mfr.#: BFP540FESDE6327 OMO.#: OMO-BFP540FESDE6327-INFINEON-TECHNOLOGIES	RF TRANS NPN 5V 30GHZ 4TSFP
	Mfr.#: BFP540FESDH6327 OMO.#: OMO-BFP540FESDH6327-INFINEON-TECHNOLOGIES	Trans GP BJT NPN 4.5V 0.08A 4-Pin TSFP T/R (Alt: BFP 540FESD H6327)
	Mfr.#: BFP540FESDH6327XT OMO.#: OMO-BFP540FESDH6327XT-1190	* FREE SHIPPING ORDERS OVER $100 *
	Mfr.#: BFP540FESDH6327XTSA1 OMO.#: OMO-BFP540FESDH6327XTSA1-INFINEON-TECHNOLOGIES	RF Bipolar Transistors RF BIP TRANSISTOR

BFP540FESDH6327XTSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes