BFP640H6327XTSA1 vs BFP 640 H6327 vs BFP640H6327XT

 
PartNumberBFP640H6327XTSA1BFP 640 H6327BFP640H6327XT
DescriptionRF Bipolar Transistors RF BIP TRANSISTORRF Bipolar Transistors RF BIP TRANSISTORTrans GP BJT NPN 4V 0.05A 4-Pin(3+Tab) SOT-343 T/R - Tape and Reel (Alt: BFP640H6327XTSA1)
ManufacturerInfineonInfineonInfineon Technologies
Product CategoryRF Bipolar TransistorsRF Bipolar TransistorsTransistors - Bipolar (BJT) - RF
RoHSYY-
SeriesBFP640BFP640BFP640
TechnologySiSiGe-
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseSOT-343-4SOT-343-
PackagingReelReelDigi-ReelR Alternate Packaging
BrandInfineon TechnologiesInfineon Technologies-
Product TypeRF Bipolar TransistorsRF Bipolar Transistors-
Factory Pack Quantity30003000-
SubcategoryTransistorsTransistors-
Part # Aliases640 BFP BFP64H6327XT H6327 SP000745306BFP640H6327XTSA1 BFP64H6327XT SP000745306-
Unit Weight0.000226 oz0.000212 oz0.000226 oz
Transistor Type-BipolarNPN
Transistor Polarity-NPN-
DC Collector/Base Gain hfe Min-110-
Collector Emitter Voltage VCEO Max-4 V-
Emitter Base Voltage VEBO-1.2 V-
Continuous Collector Current-50 mA-
Minimum Operating Temperature-- 65 C-
Maximum Operating Temperature-+ 150 C-
Configuration-Single-
Operating Frequency-40 GHz-
Type-RF Silicon Germanium-
Pd Power Dissipation-200 mW-
Part Aliases--640 BFP BFP640H6327XT H6327 SP000745306
Package Case--SC-82A, SOT-343
Mounting Type--Surface Mount
Supplier Device Package--PG-SOT343-4
Power Max--200mW
Current Collector Ic Max--50mA
Voltage Collector Emitter Breakdown Max--4.5V
DC Current Gain hFE Min Ic Vce--110 @ 30mA, 3V
Frequency Transition--40GHz
Noise Figure dB Typ f--0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz
Gain--12.5dB
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