BFP640H6327XTSA1

Mfr. #:: BFP640H6327XTSA1
Manufacturer:: Infineon Technologies
Description:: RF Bipolar Transistors RF BIP TRANSISTOR
Lifecycle:: New from this manufacturer.
Datasheet:: BFP640H6327XTSA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: RF Bipolar Transistors

RoHS:: Y

Series:: BFP640

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: SOT-343-4

Packaging:: Reel

Brand:: Infineon Technologies

Product Type:: RF Bipolar Transistors

Factory Pack Quantity:: 3000

Subcategory:: Transistors

Part # Aliases:: 640 BFP BFP64H6327XT H6327 SP000745306

Unit Weight:: 0.000226 oz

Tags: BFP640H6327X, BFP640H63, BFP640H, BFP64, BFP6, BFP

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If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BFP640H6327XTSA1 Description

***ca Corp: RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, C Band, Silicon Germanium, NPN

***ure Electronics: BFP640 Series 4.5 V NPN Low Noise Germanium Bipolar RF Transistor - PG-SOT343-4

***ical: Trans RF BJT NPN 4.1V 0.05A 200mW Automotive 4-Pin(3+Tab) SOT-343 T/R

***trelec: Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) mA = 50 / Collector-Emitter Voltage (Vceo) V = 4.1 / DC Current Gain (hFE) = 180 / Collector-Base Voltage (Vcbo) V = 13 / Emitter-Base Voltage (Vebo) V = 1.2 / Operating Temperature Max. °C = 150 / Transit Frequency GHz = 42 / Power Dissipation (Pd) mW = 200 / Package Type = SOT-343 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel

***ineon: Summary of Features: High gain low noise RF transistor; Provides outstanding performance for a wide range of wireless applications; Ideal for CDMA and WLAN applications; Outstanding noise figure F = 0.65 dB at 1.8 GHz ,Outstanding noise figure F = 1.2 dB at 6 GHz; High maximum stable gain :Gms = 24 dB at 1.8 GHz; Gold metallization for extra high reliability; 70 GHz fT-Silicon Germanium technology; Pb-free (RoHS compliant) package1); Qualified according AEC Q101

***nell: RF TRANSISTOR, SOT-343; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 4V; Transition Frequency ft: 40GHz; Power Dissipation Pd: 200mW; DC Collector Current: 50mA; DC Current Gain hFE: 180hFE; RF Transistor Case: SOT-343; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Associated Gain Ga: 24dB; Continuous Collector Current Ic: 50mA; Continuous Collector Current Ic Max: 50mA; Current Ic Continuous a Max: 50mA; Current Ic hFE: 30mA; Gain Bandwidth ft Min: 30GHz; Gain Bandwidth ft Typ: 36GHz; Hfe Min: 100; No. of Transistors: 1; Noise Figure Typ: 0.65dB; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to +150°C; Output @ Third Order Intercept Point IP3: 26.5dB; Power @ 1dB Gain Compression, P1dB: 13dBm; Power Dissipation Ptot Max: 200mW; SMD Marking: R4s; Termination Type: Surface Mount Device; Test Frequency: 1.8GHz; Transistor Case Style: SOT-343; Voltage Vcbo: 13V

***ca Corp: RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, L Band, Silicon, NPN

***ical: Trans RF BJT NPN 30V 0.08A 450mW Automotive 4-Pin SOT-143R T/R

***nell: TRANSISTOR, AUTO, RF, NPN, 12V, 11GHZ; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 12V; Transition Frequency ft: 11GHz; Power Dissipation Pd: 450mW; DC Collector Current: 15mA; DC Current Gain hFE: 95hFE; RF Transistor Case: SOT-143R; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: BFU550XR Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***ure Electronics: BFU730LX Series 3 V 30 mA NPN Wideband Silicon Germanium RF Transistor - SOT-883

***icontronic: RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Silicon, NPN

***ark: Trans Gp Bjt Npn 3V 0.03A 3-Pin Dfn_C T/r Rohs Compliant: Yes

***nell: RF TRANSISTOR, NPN, 3V, 53GHZ, SOT883C; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 3V; Transition Frequency ft: 53GHz; Power Dissipation Pd: 160mW; DC Collector Current: 30mA; DC Current Gain hFE: 205hFE; RF Transistor Case: SOT-883C; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

*** Semiconductors SCT: NPN Wideband Silicon RF Transistor, SOT143R, RoHS

***et: Trans GP NPN 12V 0.04A 4-Pin SOT-143R T/R

***hardson RFPD: RF SMALL SIGNAL TRANSISTOR BIPOLAR/HBT

***el Electronic: Motor / Motion / Ignition Controllers & Drivers H-BRIDGE MOTOR DRIVER

***i-Key: RF TRANS NPN 12V 11GHZ SOT143R

***nell: TRANSISTOR, AUTO, RF, NPN, 12V, 11GHZ; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 12V; Transition Frequency ft: 11GHz; Power Dissipation Pd: 450mW; DC Collector Current: 40mA; DC Current Gain hFE: 95hFE; RF Transistor Case: SOT-143R; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: BFU530XR Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

*** Stop Electro: Small Signal Bipolar Transistor, 0.2A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon

***et: Trans GP BJT NPN 50V 0.1A 3-Pin SOT-416FL T/R

***nell: TRANS, NPN, 50V, 0.1A, 150DEG C, 0.15W; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 50V; Transition Frequency ft: 350MHz; Power Dissipation Pd: 150mW; DC Collector Current: 100mA; DC Current Gain hFE: 120hFE; Transistor Case Style: SOT-416FL; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***et: Trans GP BJT NPN 30V 0.5A 3-Pin SOT-416FL T/R

***i-Key: TRANS NPN 30V 0.5A EMT3F

***nell: TRANS, NPN, 30V, 0.5A, 150DEG C, 0.15W; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 30V; Transition Frequency ft: 360MHz; Power Dissipation Pd: 150mW; DC Collector Current: 500mA; DC Current Gain hFE: 200hFE; Transistor Case Style: SOT-416FL; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***et: Trans GP BJT NPN 20V 0.2A 3-Pin SOT-416FL T/R

***nell: TRANSISTOR, NPN, 20V, 0.2A, SOT-416FL; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 20V; Transition Frequency ft: 400MHz; Power Dissipation Pd: 150mW; DC Collector Current: 200mA; DC Current Gain hFE: 120hFE; Transistor Case Style: SOT-416FL; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***i-Key: TRANS NPN 20V 0.2A EMT3F

***horized Procurement Solutions: OEMs, CMs ONLY (NO BROKERS)

Market price

Part #	Mfg.	Description	Stock	Price
BFP640H6327XTSA1 DISTI # V36:1790_06384778	Infineon Technologies AG	Trans RF BJT NPN 4V 0.05A Automotive 4-Pin(3+Tab) SOT-343 T/R RoHS: Compliant	12000	30000:$0.1337 15000:$0.1404 6000:$0.1495 3000:$0.1498
BFP640H6327XTSA1 DISTI # V72:2272_06384778	Infineon Technologies AG	Trans RF BJT NPN 4V 0.05A Automotive 4-Pin(3+Tab) SOT-343 T/R RoHS: Compliant	5998	6000:$0.1509 3000:$0.1510 1000:$0.1724 500:$0.2122 250:$0.2128 100:$0.2133 25:$0.3119 10:$0.3135 1:$0.3602
BFP640H6327XTSA1 DISTI # BFP640H6327XTSA1CT-ND	Infineon Technologies AG	RF TRANS NPN 4.5V 40GHZ SOT343-4 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	64780In Stock	1000:$0.2097 500:$0.2651 100:$0.3317 10:$0.4370 1:$0.5100
BFP640H6327XTSA1 DISTI # BFP640H6327XTSA1DKR-ND	Infineon Technologies AG	RF TRANS NPN 4.5V 40GHZ SOT343-4 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	64780In Stock	1000:$0.2097 500:$0.2651 100:$0.3317 10:$0.4370 1:$0.5100
BFP640H6327XTSA1 DISTI # BFP640H6327XTSA1TR-ND	Infineon Technologies AG	RF TRANS NPN 4.5V 40GHZ SOT343-4 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	63000In Stock	30000:$0.1583 15000:$0.1659 6000:$0.1766 3000:$0.1874
BFP640H6327XTSA1 DISTI # 30672867	Infineon Technologies AG	Trans RF BJT NPN 4V 0.05A Automotive 4-Pin(3+Tab) SOT-343 T/R RoHS: Compliant	12000	6000:$0.1495 3000:$0.1498
BFP640H6327XTSA1 DISTI # 26195588	Infineon Technologies AG	Trans RF BJT NPN 4V 0.05A Automotive 4-Pin(3+Tab) SOT-343 T/R RoHS: Compliant	5998	6000:$0.1509 3000:$0.1510 1000:$0.1724 500:$0.2122 250:$0.2128 100:$0.2133 43:$0.3119
BFP640H6327XT DISTI # BFP640H6327XTSA1	Infineon Technologies AG	Trans GP BJT NPN 4V 0.05A 4-Pin(3+Tab) SOT-343 T/R - Tape and Reel (Alt: BFP640H6327XTSA1) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.1549 6000:$0.1489 12000:$0.1439 18000:$0.1389 30000:$0.1359
BFP640H6327XTSA1 DISTI # 85X4134	Infineon Technologies AG	RF TRANS, NPN, 4.7V, 0.05A, 0.2W, SOT343,Transistor Polarity:NPN,Collector Emitter Voltage V(br)ceo:4.7V,Transition Frequency ft:42GHz,Power Dissipation Pd:200mW,DC Collector Current:50mA,DC Current Gain hFE:110hFE RoHS Compliant: Yes	0	1:$0.4700 10:$0.3890 25:$0.3380 50:$0.2880 100:$0.2370 250:$0.2190 500:$0.2020 1000:$0.1840
BFP 640 H6327 DISTI # 726-BFP640H6327	Infineon Technologies AG	RF Bipolar Transistors RF BIP TRANSISTOR RoHS: Compliant	6728	1:$0.4700 10:$0.3890 100:$0.2370 1000:$0.1840 3000:$0.1570 9000:$0.1460 24000:$0.1380 45000:$0.1350
BFP640H6327XTSA1 DISTI # 726-BFP640H6327XTSA1	Infineon Technologies AG	RF Bipolar Transistors RF BIP TRANSISTOR RoHS: Compliant	3283	1:$0.4700 10:$0.3890 100:$0.2370 1000:$0.1840 3000:$0.1570 9000:$0.1460 24000:$0.1380 45000:$0.1350
BFP640H6327XTSA1	Infineon Technologies AG	RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, C Band, Silicon Germanium, NPN RoHS: Compliant	21000	1000:$0.1700 500:$0.1800 100:$0.1900 25:$0.2000 1:$0.2100
BFP640H6327XTSA1	Infineon Technologies AG	BFP640 Series 4.5 V NPN Low Noise Germanium Bipolar RF Transistor - PG-SOT343-4 RoHS: Compliant	6000Reel	3000:$0.1760 6000:$0.1490
BFP640H6327XTSA1 DISTI # 8275063P	Infineon Technologies AG	SIGE RF TRANSISTOR NPN 4V SOT343, RL	3320	125:£0.2220 500:£0.2100 1250:£0.1920
BFP640H6327XTSA1 DISTI # BFP640	Infineon Technologies AG	NPN-HF 4,1V 50mA 200mW 42GHz SOT343R RoHS: Compliant	2900	100:€0.2105 500:€0.1705 1000:€0.1505 3000:€0.1450
BFP640H6327XTSA1 DISTI # C1S322000210554	Infineon Technologies AG	Trans RF BJT NPN 4V 0.05A 200mW Automotive 4-Pin(3+Tab) SOT-343 T/R RoHS: Compliant	5998	250:$0.2128 100:$0.2133 25:$0.3119 10:$0.3135
BFP640H6327XTSA1 DISTI # C1S322000256343	Infineon Technologies AG	Trans RF BJT NPN 4V 0.05A 200mW Automotive 4-Pin(3+Tab) SOT-343 T/R RoHS: Compliant	12000	6000:$0.1495 3000:$0.1498
BFP640H6327XTSA1 DISTI # 2443515	Infineon Technologies AG	RF BIP TRANSISTORS RoHS: Compliant	808	5:£0.3420 25:£0.2860 100:£0.1830 250:£0.1620 500:£0.1410
BFP640H6327XTSA1 DISTI # 2443515	Infineon Technologies AG	RF BIP TRANSISTORS RoHS: Compliant	678	1:$0.7000
BFP640H6327XTSA1 DISTI # 2443515RL	Infineon Technologies AG	RF BIP TRANSISTORS RoHS: Compliant	0	1:$0.7000
BFP640H6327XTSA1 DISTI # XSKDRABS0003135	Infineon Technologies AG	RoHS: Compliant	36720	3000:$0.2700 36720:$0.2520
BFP640H6327XTSA1 DISTI # XSFP00000097415	Infineon Technologies AG	RoHS: Compliant	4038	3000:$0.3520 4038:$0.3200

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BFP640H6327XTSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes