BSC080N03LSGATMA1 vs BSC080N03LS G vs BSC080N03LSGATMA1-CUT TAPE

 
PartNumberBSC080N03LSGATMA1BSC080N03LS GBSC080N03LSGATMA1-CUT TAPE
DescriptionMOSFET N-Ch 30V 53A TDSON-8 OptiMOS 3Trans MOSFET N-CH 30V 14A 8-Pin TDSON T/R (Alt: BSC080N03LS G)
ManufacturerInfineonINFINEON-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTDSON-8--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current53 A--
Rds On Drain Source Resistance6.7 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge21 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation35 W--
ConfigurationSingleSingle Quad Drain Triple Source-
Channel ModeEnhancementEnhancement-
TradenameOptiMOSOptiMOS-
PackagingReelReel-
Height1.27 mm--
Length5.9 mm--
SeriesOptiMOS 3OptiMOS 3-
Transistor Type1 N-Channel1 N-Channel-
Width5.15 mm--
BrandInfineon Technologies--
Forward Transconductance Min30 S--
Fall Time2.6 ns2.6 ns-
Product TypeMOSFET--
Rise Time2.8 ns2.8 ns-
Factory Pack Quantity5000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time15 ns15 ns-
Typical Turn On Delay Time3.3 ns3.3 ns-
Part # AliasesBSC080N03LS BSC8N3LSGXT G SP000275114--
Unit Weight0.003915 oz--
Part Aliases-BSC080N03LSGATMA1 BSC080N03LSGXT SP000275114-
Package Case-TDSON-8-
Pd Power Dissipation-2.5 W-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-14 A-
Vds Drain Source Breakdown Voltage-30 V-
Rds On Drain Source Resistance-8 mOhms-
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