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BSC080N03LSGATMA1

BSC080N03LSGATMA1
Mfr. #:
BSC080N03LSGATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 30V 53A TDSON-8 OptiMOS 3
Lifecycle:
New from this manufacturer.
Datasheet:
BSC080N03LSGATMA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TDSON-8
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
30 V
Id - Continuous Drain Current:
53 A
Rds On - Drain-Source Resistance:
6.7 mOhms
Vgs th - Gate-Source Threshold Voltage:
1 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
21 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
35 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
OptiMOS
Packaging:
Reel
Height:
1.27 mm
Length:
5.9 mm
Series:
OptiMOS 3
Transistor Type:
1 N-Channel
Width:
5.15 mm
Brand:
Infineon Technologies
Forward Transconductance - Min:
30 S
Fall Time:
2.6 ns
Product Type:
MOSFET
Rise Time:
2.8 ns
Factory Pack Quantity:
5000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
15 ns
Typical Turn-On Delay Time:
3.3 ns
Part # Aliases:
BSC080N03LS BSC8N3LSGXT G SP000275114
Unit Weight:
0.003915 oz
Tags
BSC080N03LSG, BSC080N03L, BSC080N, BSC080, BSC08, BSC0, BSC
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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 30 V 8 mOhm 16 nC OptiMOS™ Power Mosfet - TDSON-8
***ment14 APAC
MOSFET, N CH, 100A, 30V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:53A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6.7mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:35W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:53A; Power Dissipation Pd:35W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon SCT
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TDSON-8, RoHS
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
Part # Mfg. Description Stock Price
BSC080N03LSGATMA1
DISTI # V72:2272_06390942		Infineon Technologies AGTrans MOSFET N-CH 30V 14A 8-Pin TDSON EP T/R
RoHS: Compliant		3336
  • 3000:$0.1889
  • 1000:$0.2227
  • 500:$0.2475
  • 250:$0.2750
  • 100:$0.3055
  • 25:$0.4363
  • 10:$0.4418
  • 1:$0.5104
BSC080N03LSGATMA1
DISTI # BSC080N03LSGATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 30V 53A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		On Order
  • 5000:$0.2692
BSC080N03LSGATMA1
DISTI # BSC080N03LSGATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 30V 53A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.3287
  • 500:$0.4108
  • 100:$0.5546
  • 10:$0.7190
  • 1:$0.8200
BSC080N03LSGATMA1
DISTI # BSC080N03LSGATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 30V 53A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.3287
  • 500:$0.4108
  • 100:$0.5546
  • 10:$0.7190
  • 1:$0.8200
BSC080N03LSGATMA1
DISTI # 31003332		Infineon Technologies AGTrans MOSFET N-CH 30V 14A 8-Pin TDSON EP T/R
RoHS: Compliant		3336
  • 3000:$0.1889
  • 1000:$0.2525
  • 500:$0.3043
  • 250:$0.3076
  • 100:$0.3111
  • 32:$0.4363
BSC080N03LSGATMA1
DISTI # BSC080N03LSGATMA1		Infineon Technologies AGTrans MOSFET N-CH 30V 14A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC080N03LSGATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$0.2399
  • 10000:$0.2389
  • 20000:$0.2379
  • 30000:$0.2379
  • 50000:$0.2369
BSC080N03LSGATMA1
DISTI # 50Y1805		Infineon Technologies AGMOSFET Transistor, N Channel, 53 A, 30 V, 0.0067 ohm, 10 V, 2.2 V RoHS Compliant: Yes439
  • 1:$0.6500
  • 10:$0.5400
  • 25:$0.4760
  • 50:$0.4120
  • 100:$0.3480
  • 250:$0.3250
  • 500:$0.3020
  • 1000:$0.2790
BSC080N03LSGATMA1Infineon Technologies AGPower Field-Effect Transistor, 14A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		4500
  • 1000:$0.2200
  • 500:$0.2400
  • 100:$0.2500
  • 25:$0.2600
  • 1:$0.2800
BSC080N03LSGATMA1
DISTI # 726-BSC080N03LSGATMA		Infineon Technologies AGMOSFET N-Ch 30V 53A TDSON-8 OptiMOS 3
RoHS: Compliant		6236
  • 1:$0.6800
  • 10:$0.5620
  • 100:$0.3630
  • 1000:$0.2910
BSC080N03LS G
DISTI # 726-BSC080N03LSG		Infineon Technologies AGMOSFET N-Ch 30V 53A TDSON-8 OptiMOS 3
RoHS: Compliant		4403
  • 1:$0.6500
  • 10:$0.5400
  • 100:$0.3480
  • 1000:$0.2790
BSC080N03LSGATMA1
DISTI # 7528160P		Infineon Technologies AGMOSFET N-CHANNEL 30V 14A OPTIMOS3 TDSON8, RL1910
  • 125:£0.4140
  • 500:£0.3780
  • 1250:£0.3520
  • 5000:£0.3280
BSC080N03LSGATMA1
DISTI # BSC080N03LSGATMA1		Infineon Technologies AGTransistor: N-MOSFET,unipolar,30V,43A,35W,PG-TDSON-82937
  • 1:$0.6297
  • 3:$0.3763
  • 10:$0.3168
  • 100:$0.2835
  • 1000:$0.2548
BSC080N03LSGATMA1
DISTI # 2480740		Infineon Technologies AGMOSFET, N-CH, 30V, 53A, TDSON-8
RoHS: Compliant		699
  • 5:£0.4850
  • 25:£0.4260
  • 100:£0.2640
  • 250:£0.2460
  • 500:£0.2290
BSC080N03LSGATMA1
DISTI # 2480740		Infineon Technologies AGMOSFET, N-CH, 30V, 53A, TDSON-8
RoHS: Compliant		439
  • 1:$1.0300
  • 10:$0.8550
  • 100:$0.5510
  • 1000:$0.4410
  • 5000:$0.3900
BSC080N03LSGATMA1
DISTI # 2480740RL		Infineon Technologies AGMOSFET, N-CH, 30V, 53A, TDSON-8
RoHS: Compliant		0
  • 1:$1.0300
  • 10:$0.8550
  • 100:$0.5510
  • 1000:$0.4410
  • 5000:$0.3900
BSC080N03LSGATMA1
DISTI # C1S322000207143		Infineon Technologies AGTrans MOSFET N-CH 30V 14A 8-Pin TDSON EP T/R
RoHS: Compliant		3336
  • 250:$0.3078
  • 100:$0.3111
  • 25:$0.4365
  • 10:$0.4419
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Availability
Stock:
Available
On Order:
1988
Enter Quantity:
Current price of BSC080N03LSGATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$0.67
$0.67
10
$0.56
$5.62
100
$0.36
$36.30
1000
$0.29
$291.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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