BSC080N03LSG

BSC080N03LSGATMA1 vs BSC080N03LSG vs BSC080N03LSGATMA1-CUT TAPE

 
PartNumberBSC080N03LSGATMA1BSC080N03LSGBSC080N03LSGATMA1-CUT TAPE
DescriptionMOSFET N-Ch 30V 53A TDSON-8 OptiMOS 314 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET
ManufacturerInfineonINFINEON-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTDSON-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current53 A--
Rds On Drain Source Resistance6.7 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge21 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation35 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameOptiMOS--
PackagingReel--
Height1.27 mm--
Length5.9 mm--
SeriesOptiMOS 3--
Transistor Type1 N-Channel--
Width5.15 mm--
BrandInfineon Technologies--
Forward Transconductance Min30 S--
Fall Time2.6 ns--
Product TypeMOSFET--
Rise Time2.8 ns--
Factory Pack Quantity5000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time15 ns--
Typical Turn On Delay Time3.3 ns--
Part # AliasesBSC080N03LS BSC8N3LSGXT G SP000275114--
Unit Weight0.003915 oz--
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
BSC080N03LSGATMA1 MOSFET N-Ch 30V 53A TDSON-8 OptiMOS 3
BSC080N03LSGATMA1 MOSFET N-CH 30V 53A TDSON-8
BSC080N03LSG 14 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET
BSC080N03LSGATMA1-CUT TAPE New and Original
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