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| PartNumber | BSC160N10NS3GATMA1 | BSC160N10NS3 G | BSC160N10NS3GATMA1 , TDZ |
| Description | MOSFET N-Ch 100V 42A TDSON-8 OptiMOS 3 | MOSFET N-Ch 100V 42A TDSON-8 OptiMOS 3 | |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TDSON-8 | TDSON-8 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V | - |
| Id Continuous Drain Current | 42 A | 42 A | - |
| Rds On Drain Source Resistance | 13.9 mOhms | 13.9 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 25 nC | 25 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 60 W | 60 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Reel | Reel | - |
| Height | 1.27 mm | 1.27 mm | - |
| Length | 5.9 mm | 5.9 mm | - |
| Series | OptiMOS 3 | OptiMOS 3 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 5.15 mm | 5.15 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Forward Transconductance Min | 21 S | 21 S | - |
| Fall Time | 5 ns | 5 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 15 ns | 15 ns | - |
| Factory Pack Quantity | 5000 | 5000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 22 ns | 22 ns | - |
| Typical Turn On Delay Time | 13 ns | 13 ns | - |
| Part # Aliases | BSC160N10NS3 BSC16N1NS3GXT G SP000482382 | BSC160N10NS3GATMA1 BSC16N1NS3GXT SP000482382 | - |
| Unit Weight | 0.010582 oz | 0.003527 oz | - |