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BSC160N10NS3GATMA1
BSC160N10NS3GATMA1
BSC160N10NS3GATMA1BSC160N10NS3GATMA1
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BSC160N10NS3GATMA1

Mfr. #:
BSC160N10NS3GATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 100V 42A TDSON-8 OptiMOS 3
Lifecycle:
New from this manufacturer.
Datasheet:
BSC160N10NS3GATMA1 Datasheet
ECAD Model:

Availability

Stock:
41
On Order:
2024
Enter Quantity:
Current price of BSC160N10NS3GATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Quantity
Unit Price
Ext. Price
1
$1.03
$1.03
10
$0.89
$8.86
100
$0.68
$68.10
500
$0.60
$300.50
1000
$0.48
$475.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TDSON-8
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
100 V
Id - Continuous Drain Current:
42 A
Rds On - Drain-Source Resistance:
13.9 mOhms
Vgs th - Gate-Source Threshold Voltage:
2 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
25 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
60 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
OptiMOS
Packaging:
Reel
Height:
1.27 mm
Length:
5.9 mm
Series:
OptiMOS 3
Transistor Type:
1 N-Channel
Width:
5.15 mm
Brand:
Infineon Technologies
Forward Transconductance - Min:
21 S
Fall Time:
5 ns
Product Type:
MOSFET
Rise Time:
15 ns
Factory Pack Quantity:
5000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
22 ns
Typical Turn-On Delay Time:
13 ns
Part # Aliases:
BSC160N10NS3 BSC16N1NS3GXT G SP000482382
Unit Weight:
0.010582 oz
Tags
BSC160N10NS3, BSC160N10, BSC160, BSC16, BSC1, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 100 V 33 mOhm 25 nC OptiMOS™ Power Mosfet - TDSON-8
***p One Stop
Trans MOSFET N-CH 100V 8.8A Automotive 8-Pin TDSON EP T/R
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:42A; On Resistance Rds(On):0.0139Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.7V Rohs Compliant: Yes
***ineon SCT
Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TDSON-8, RoHS
***ineon
The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
***ark
PT7 80V/20V NCH POWERTRENCH MOSFET - 8LD,PQFN,JEDEC MO-240 AA,5.0X6.0MM
***emi
N-Channel PowerTrench® MOSFET 80V, 44A, 11.7mΩ
***ure Electronics
N-Channel 80 V 11.7 mO 41 nC SMT PowerTrench® Mosfet - POWER 56
***r Electronics
Power Field-Effect Transistor, 10.5A I(D), 80V, 0.0117ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(on), fast switching speed, and body diode reverse-recovery performance.
***ure Electronics
Single N-Channel 100 V 12.3 mOhm 51 nC OptiMOS™ Power Mosfet - TDSON-8
***roFlash
Power Field-Effect Transistor, 10.6A I(D), 100V, 0.0123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ineon SCT
Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TDSON-8, RoHS
***ment14 APAC
MOSFET, N CH, 71A, 100V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:71A; Drain Source Voltage Vds:100V; On Resistance Rds(on):10mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.85V; Power Dissipation Pd:114W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:71A; Power Dissipation Pd:114W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon
The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
***ure Electronics
Single N-Channel 100 V 11.8 mOhm 42 nC OptiMOS™ Power Mosfet - TDSON-8
***Yang
Transistor MOSFET N-CH 100V 71A 8-Pin TDSON T/R - Tape and Reel
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:71A; On Resistance Rds(On):0.0118Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V Rohs Compliant: Yes
***ineon SCT
Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TDSON-8, RoHS
***ineon
The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
***ure Electronics
Single N-Channel 80 V 13.4 mOhm 27 nC HEXFET® Power Mosfet - SOIC-8
*** Source Electronics
Trans MOSFET N-CH 80V 10A 8-Pin SOIC T/R / MOSFET N-CH 80V 10A 8-SOIC
***ineon SCT
80V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package, SO8, RoHS
***nell
MOSFET, N-CH, 80V, 10A, SOIC; Transistor Polarity: N Channel; Continuous Drain Current Id: 10A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.011ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4.9V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ure Electronics
N-Channel 80 V 16 mOhm 2.5 W Surface Mount PowerTrench MosFet - SOIC-8
***emi
N-Channel PowerTrench® MOSFET 80V, 8.9A, 16mΩ
***Yang
Trans MOSFET N-CH 80V 8.9A 8-Pin SOIC N T/R - Tape and Reel
***ment14 APAC
MOSFET,N CH,80V,8.9A,8SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:8.9A; Drain Source Voltage Vds:80V; On Resistance Rds(on):14mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:2.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:8.9A; Power Dissipation Pd:2.5W; Voltage Vgs Max:20V
***et
Trans MOSFET N-CH 100V 8.9A 8-Pin SOIC T/R
***des Inc SCT
100V N-CHANNEL ENHANCEMENT MODE MOSFET, 100 V, RoHS
Part # Mfg. Description Stock Price
BSC160N10NS3GATMA1
DISTI # V36:1790_06384564		Infineon Technologies AGTrans MOSFET N-CH 100V 8.8A Automotive 8-Pin TDSON EP T/R
RoHS: Compliant		10000
  • 5000:$0.4412
BSC160N10NS3GATMA1
DISTI # V72:2272_06384564		Infineon Technologies AGTrans MOSFET N-CH 100V 8.8A Automotive 8-Pin TDSON EP T/R
RoHS: Compliant		2221
  • 1000:$0.4612
  • 500:$0.5949
  • 250:$0.6625
  • 100:$0.6763
  • 25:$0.7891
  • 10:$0.9644
  • 1:$1.1184
BSC160N10NS3GATMA1
DISTI # BSC160N10NS3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 100V 42A 8TDSON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		30789In Stock
  • 1000:$0.5131
  • 500:$0.6500
  • 100:$0.7868
  • 10:$1.0090
  • 1:$1.1300
BSC160N10NS3GATMA1
DISTI # BSC160N10NS3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 100V 42A 8TDSON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		30789In Stock
  • 1000:$0.5131
  • 500:$0.6500
  • 100:$0.7868
  • 10:$1.0090
  • 1:$1.1300
BSC160N10NS3GATMA1
DISTI # BSC160N10NS3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 100V 42A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		25000In Stock
  • 10000:$0.4251
  • 5000:$0.4417
BSC160N10NS3GATMA1
DISTI # 33626984		Infineon Technologies AGTrans MOSFET N-CH 100V 8.8A Automotive 8-Pin TDSON EP T/R
RoHS: Compliant		10000
  • 5000:$0.4412
BSC160N10NS3GATMA1
DISTI # 32674597		Infineon Technologies AGTrans MOSFET N-CH 100V 8.8A Automotive 8-Pin TDSON EP T/R
RoHS: Compliant		2221
  • 18:$1.1184
BSC160N10NS3GATMA1
DISTI # SP000482382		Infineon Technologies AGTrans MOSFET N-CH 100V 8.8A 8-Pin TDSON T/R (Alt: SP000482382)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Europe - 0
  • 50000:€0.4509
  • 30000:€0.4859
  • 20000:€0.5269
  • 10000:€0.5739
  • 5000:€0.7019
BSC160N10NS3GXT
DISTI # BSC160N10NS3GATMA1		Infineon Technologies AGTrans MOSFET N-CH 100V 8.8A 8-Pin TDSON EP - Tape and Reel (Alt: BSC160N10NS3GATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 50000:$0.3215
  • 30000:$0.3273
  • 20000:$0.3387
  • 10000:$0.3514
  • 5000:$0.3645
BSC160N10NS3GATMA1
DISTI # 47Y7999		Infineon Technologies AGMOSFET Transistor, N Channel, 42 A, 100 V, 0.0139 ohm, 10 V, 2.7 V RoHS Compliant: Yes10828
  • 1000:$0.4990
  • 500:$0.6070
  • 250:$0.6470
  • 100:$0.6880
  • 50:$0.7570
  • 25:$0.8260
  • 10:$0.8950
  • 1:$1.0400
BSC160N10NS3GATMA1.
DISTI # 23AC2920		Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:42A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0139ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.7V,Power Dissipation Pd:60W,No. of Pins:8Pins RoHS Compliant: Yes0
  • 50000:$0.3220
  • 30000:$0.3280
  • 20000:$0.3390
  • 10000:$0.3520
  • 1:$0.3650
BSC160N10NS3GATMA1
DISTI # 726-BSC160N10NS3GATM		Infineon Technologies AGMOSFET N-Ch 100V 42A TDSON-8 OptiMOS 3
RoHS: Compliant		41977
  • 1:$1.0300
  • 10:$0.8860
  • 100:$0.6810
  • 500:$0.6010
  • 1000:$0.4750
BSC160N10NS3 G
DISTI # 726-BSC160N10NS3G		Infineon Technologies AGMOSFET N-Ch 100V 42A TDSON-8 OptiMOS 3
RoHS: Compliant		9432
  • 1:$1.0300
  • 10:$0.8860
  • 100:$0.6810
  • 500:$0.6010
  • 1000:$0.4750
BSC160N10NS3GATMA1
DISTI # 8259250P		Infineon Technologies AGMOSFET N-CH 8.8A 100V OPTIMOS3 TDSON8EP, RL20870
  • 100:£0.4870
BSC160N10NS3GATMA1
DISTI # BSC160N10NS3GATMA1		Infineon Technologies AGTransistor: N-MOSFET,unipolar,100V,42A,60W,PG-TDSON-84293
  • 500:$0.5777
  • 100:$0.6419
  • 25:$0.7320
  • 5:$0.8086
  • 1:$0.8987
BSC160N10NS3GATMA1
DISTI # 2443424		Infineon Technologies AGMOSFET, N CH, 100V, 42A, TDSON-8
RoHS: Compliant		10828
  • 100:$1.0300
  • 10:$1.3400
  • 1:$1.5500
BSC160N10NS3GATMA1
DISTI # 2443424		Infineon Technologies AGMOSFET, N CH, 100V, 42A, TDSON-811013
  • 500:£0.4680
  • 250:£0.4990
  • 100:£0.5300
  • 10:£0.7460
  • 1:£0.9140
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