 |  | | |
| PartNumber | BSC160N10NS3 G | BSC160N10NS | BSC160N10NS3G |
| Description | MOSFET N-Ch 100V 42A TDSON-8 OptiMOS 3 | Trans MOSFET N-CH 100V 8.8A 8-Pin TDSON T/R (Alt: BSC160N10NS3 G) | |
| Manufacturer | Infineon | Infineon Technologies | |
| Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TDSON-8 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 42 A | - | - |
| Rds On Drain Source Resistance | 13.9 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 25 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 60 W | - | - |
| Configuration | Single | Single Quad Drain Triple Source | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Reel | Reel | - |
| Height | 1.27 mm | - | - |
| Length | 5.9 mm | - | - |
| Series | OptiMOS 3 | OptiMOS 3 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 5.15 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 21 S | - | - |
| Fall Time | 5 ns | 5 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 15 ns | 15 ns | - |
| Factory Pack Quantity | 5000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 22 ns | 22 ns | - |
| Typical Turn On Delay Time | 13 ns | 13 ns | - |
| Part # Aliases | BSC160N10NS3GATMA1 BSC16N1NS3GXT SP000482382 | - | - |
| Unit Weight | 0.003527 oz | - | - |
| Part Aliases | - | BSC160N10NS3GATMA1 BSC160N10NS3GXT SP000482382 | - |
| Package Case | - | TDSON-8 | - |
| Pd Power Dissipation | - | 60 W | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 8.8 A | - |
| Vds Drain Source Breakdown Voltage | - | 100 V | - |
| Rds On Drain Source Resistance | - | 16 mOhms | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
BSC160N10NS3GATMA1 | MOSFET N-Ch 100V 42A TDSON-8 OptiMOS 3 | |
| BSC160N10NS3 G | MOSFET N-Ch 100V 42A TDSON-8 OptiMOS 3 | ||
| BSC160N10NS3GATMA1 | MOSFET N-CH 100V 42A TDSON-8 | ||
| BSC160N10NS | New and Original | ||
| BSC160N10NS3 G | MOSFET N-Ch 100V 42A TDSON-8 OptiMOS 3 | ||
| BSC160N10NS3G | Trans MOSFET N-CH 100V 8.8A 8-Pin TDSON T/R (Alt: BSC160N10NS3 G) | ||
| BSC160N10NS3GATMA1 , TDZ | New and Original |