PartNumber | BSM180D12P3C007 | BSM180D12P2C101 | BSM180D12P2E002 |
Description | Discrete Semiconductor Modules Half Bridge Module SiC UMOSFET & SBD | Discrete Semiconductor Modules Mod: 1200V 180A (no Diode) | IPM Intelligent Power Module SIC-DMOSFET/SIC-SBD 204A 2500V 11-Pin Tray (Alt: BSM180D12P2E002) |
Manufacturer | ROHM Semiconductor | ROHM Semiconductor | - |
Product Category | Discrete Semiconductor Modules | Discrete Semiconductor Modules | - |
RoHS | Y | Y | - |
Product | Power Semiconductor Modules | Power Semiconductor Modules | - |
Type | SiC Power MOSFET | SiC Power MOSFET | - |
Vgs Gate Source Voltage | - 4 V, 22 V | - 6 V, 22 V | - |
Mounting Style | Screw Mount | Screw Mount | - |
Package / Case | Module | Module | - |
Minimum Operating Temperature | - 40 C | - 40 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Series | BSMx | BSMx | - |
Packaging | Tray | Bulk | - |
Configuration | Half-Bridge | Half-Bridge | - |
Brand | ROHM Semiconductor | ROHM Semiconductor | - |
Number of Channels | 2 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Typical Delay Time | 50 ns | 80 ns | - |
Fall Time | 50 ns | 90 ns | - |
Id Continuous Drain Current | 180 A | 204 A | - |
Pd Power Dissipation | 880 W | 175 W | - |
Product Type | Discrete Semiconductor Modules | Discrete Semiconductor Modules | - |
Rise Time | 70 ns | 90 ns | - |
Factory Pack Quantity | 12 | 12 | - |
Subcategory | Discrete Semiconductor Modules | Discrete Semiconductor Modules | - |
Typical Turn Off Delay Time | 165 ns | 300 ns | - |
Typical Turn On Delay Time | 50 ns | 80 ns | - |
Vds Drain Source Breakdown Voltage | 1200 V | 1200 V | - |
Vgs th Gate Source Threshold Voltage | 2.7 V | 1.6 V | - |
Part # Aliases | BSM180D12P3C007 | BSM180D12P2C101 | - |
Height | - | 21.1 mm | - |
Length | - | 122 mm | - |
Width | - | 45.6 mm | - |
Unit Weight | - | 1.763698 oz | - |