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BSM180D12P3C007

BSM180D12P3C007
Mfr. #:
BSM180D12P3C007
Manufacturer:
Rohm Semiconductor
Description:
Discrete Semiconductor Modules Half Bridge Module SiC UMOSFET & SBD
Lifecycle:
New from this manufacturer.
Datasheet:
BSM180D12P3C007 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
BSM180D12P3C007 more Information
Product Attribute
Attribute Value
Manufacturer:
ROHM Semiconductor
Product Category:
Discrete Semiconductor Modules
RoHS:
Y
Product:
Power Semiconductor Modules
Type:
SiC Power MOSFET
Vgs - Gate-Source Voltage:
- 4 V, 22 V
Mounting Style:
Screw Mount
Package / Case:
Module
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 150 C
Series:
BSMx
Packaging:
Tray
Configuration:
Half-Bridge
Brand:
ROHM Semiconductor
Number of Channels:
2 Channel
Transistor Polarity:
N-Channel
Typical Delay Time:
50 ns
Fall Time:
50 ns
Id - Continuous Drain Current:
180 A
Pd - Power Dissipation:
880 W
Product Type:
Discrete Semiconductor Modules
Rise Time:
70 ns
Factory Pack Quantity:
12
Subcategory:
Discrete Semiconductor Modules
Typical Turn-Off Delay Time:
165 ns
Typical Turn-On Delay Time:
50 ns
Vds - Drain-Source Breakdown Voltage:
1200 V
Vgs th - Gate-Source Threshold Voltage:
2.7 V
Part # Aliases:
BSM180D12P3C007
Tags
BSM180D, BSM180, BSM18, BSM1, BSM
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
Dual SiC N-Channel SiC Power Module, 180 A, 1200 V, 4-Pin C ROHM BSM180D12P3C007
***p One Stop Japan
Trans MOSFET N-CH SiC 1.2KV 180A Automotive 10-Pin Tray
***ical
Trans MOSFET N-CH SiC 1.2KV 180A 10-Pin Tray
***ukat
SiC-N-Ch-Half-Bridge+2xSBD 1200V 180A C-
***et Europe
SiC Power Module-1200V-180A
***i-Key
SIC POWER MODULE
Silicon Carbide (SiC) Power Devices
ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. SiC also allows designers to use fewer components, further reducing design complexity.
SiC Power Modules
ROHM Semiconductor SiC power modules are Half Bridge SiC modules that integrate a SiC MOSFET and SiC SBD into a single package. These modules support high-frequency operation through reduced switching loss. The optimized design reduces stary inductance compared to existing solutions. And to prevent excessive heat generation, E Type models that integrate an additional thermistor are offered.
Part # Mfg. Description Stock Price
BSM180D12P3C007
DISTI # 33952734		ROHM SemiconductorBSM180D12P3C00712
  • 1:$866.2500
BSM180D12P3C007
DISTI # BSM180D12P3C007-ND		ROHM SemiconductorSIC POWER MODULE
RoHS: Compliant
Min Qty: 1
Container: Bulk		26In Stock
  • 1:$525.7100
BSM180D12P3C007
DISTI # C1S625901693441		ROHM SemiconductorTrans MOSFET N-CH SiC 1.2KV 180A Automotive 10-Pin Tray
RoHS: Compliant		12
  • 10:$601.0000
  • 5:$630.0000
  • 1:$693.0000
BSM180D12P3C007
DISTI # BSM180D12P3C007		ROHM SemiconductorSiC Power Module-1200V-180A (Alt: BSM180D12P3C007)
RoHS: Compliant
Min Qty: 1		Europe - 8
  • 1:€490.1900
BSM180D12P3C007
DISTI # BSM180D12P3C007		ROHM SemiconductorSiC Power Module-1200V-180A - Trays (Alt: BSM180D12P3C007)
RoHS: Compliant
Min Qty: 12
Container: Tray		Americas - 0
    BSM180D12P3C007
    DISTI # 755-BSM180D12P3C007    		ROHM SemiconductorDiscrete Semiconductor Modules Half Bridge Module SiC UMOSFET & SBD
    RoHS: Compliant    		31
    • 1:$506.9700
    BSM180D12P3C007ROHM Semiconductor 9
    • 7:$693.0750
    • 5:$739.2800
    • 1:$808.5875
    BSM180D12P3C007
    DISTI # TMOSP12817    		ROHM SemiconductorSiC Power Module 180A 1200V
    RoHS: Compliant    		Stock DE - 16Stock HK - 0Stock US - 0
    • 12:$589.5700
    BSM180D12P3C007
    DISTI # BSM180D12P3C007    		ROHM SemiconductorSiC-N-Ch-Half-Bridge+2xSBD 1200V 180A C-
    RoHS: Compliant    		1
    • 1:€540.0000
    • 4:€480.0000
    • 8:€450.0000
    • 12:€435.0000
    BSM180D12P3C007ROHM SemiconductorDiscrete Semiconductor Modules Half Bridge Module SiC UMOSFET & SBD
    RoHS: Compliant    		Americas -
      BSM180D12P3C007ROHM SemiconductorRoHS(ship within 1day)12
      • 1:$509.7300
      • 10:$491.3900
      • 50:$476.7200
      • 100:$469.3900
      • 500:$465.7200
      • 1000:$462.0500
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      Availability
      Stock:
      31
      On Order:
      2014
      Enter Quantity:
      Current price of BSM180D12P3C007 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      1
      $506.97
      $506.97
      Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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