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| PartNumber | BSM180D12P3C007 | BSM180D12P2C101 | BSM180D12P2E002 |
| Description | Discrete Semiconductor Modules Half Bridge Module SiC UMOSFET & SBD | Discrete Semiconductor Modules Mod: 1200V 180A (no Diode) | IPM Intelligent Power Module SIC-DMOSFET/SIC-SBD 204A 2500V 11-Pin Tray (Alt: BSM180D12P2E002) |
| Manufacturer | ROHM Semiconductor | ROHM Semiconductor | - |
| Product Category | Discrete Semiconductor Modules | Discrete Semiconductor Modules | - |
| RoHS | Y | Y | - |
| Product | Power Semiconductor Modules | Power Semiconductor Modules | - |
| Type | SiC Power MOSFET | SiC Power MOSFET | - |
| Vgs Gate Source Voltage | - 4 V, 22 V | - 6 V, 22 V | - |
| Mounting Style | Screw Mount | Screw Mount | - |
| Package / Case | Module | Module | - |
| Minimum Operating Temperature | - 40 C | - 40 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Series | BSMx | BSMx | - |
| Packaging | Tray | Bulk | - |
| Configuration | Half-Bridge | Half-Bridge | - |
| Brand | ROHM Semiconductor | ROHM Semiconductor | - |
| Number of Channels | 2 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Typical Delay Time | 50 ns | 80 ns | - |
| Fall Time | 50 ns | 90 ns | - |
| Id Continuous Drain Current | 180 A | 204 A | - |
| Pd Power Dissipation | 880 W | 175 W | - |
| Product Type | Discrete Semiconductor Modules | Discrete Semiconductor Modules | - |
| Rise Time | 70 ns | 90 ns | - |
| Factory Pack Quantity | 12 | 12 | - |
| Subcategory | Discrete Semiconductor Modules | Discrete Semiconductor Modules | - |
| Typical Turn Off Delay Time | 165 ns | 300 ns | - |
| Typical Turn On Delay Time | 50 ns | 80 ns | - |
| Vds Drain Source Breakdown Voltage | 1200 V | 1200 V | - |
| Vgs th Gate Source Threshold Voltage | 2.7 V | 1.6 V | - |
| Part # Aliases | BSM180D12P3C007 | BSM180D12P2C101 | - |
| Height | - | 21.1 mm | - |
| Length | - | 122 mm | - |
| Width | - | 45.6 mm | - |
| Unit Weight | - | 1.763698 oz | - |