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| PartNumber | BSZ0909NS | BSZ0909NS G | BSZ0909NSATMA1 |
| Description | MOSFET N-Ch 30V 36A TDSON-8 OptiMOS | MOSFET N-CH 34V 9A 8TSDSON | |
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TSDSON-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 34 V | - | - |
| Id Continuous Drain Current | 36 A | - | - |
| Rds On Drain Source Resistance | 12 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 6.1 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 25 W | - | - |
| Configuration | Single | - | - |
| Tradename | OptiMOS | - | - |
| Packaging | Reel | - | - |
| Height | 1.1 mm | - | - |
| Length | 3.3 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 3.3 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 2 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 2.2 ns | - | - |
| Factory Pack Quantity | 5000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 16 nS | - | - |
| Part # Aliases | BSZ0909NSATMA1 BSZ99NSXT SP000832568 | - | - |
| Unit Weight | 0.010582 oz | - | - |