BSZ120P03NS3 G vs BSZ120P03NS3E G vs BSZ120P03NS3

 
PartNumberBSZ120P03NS3 GBSZ120P03NS3E GBSZ120P03NS3
DescriptionMOSFET P-Ch -30V -40A TSDSON-8 OptiMOS P3MOSFET P-Ch -30V -40A TSDSON-8 OptiMOS P3
ManufacturerInfineonInfineonInfineon Technologies
Product CategoryMOSFETMOSFETTransistors - FETs, MOSFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTSDSON-8TSDSON-8-
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityP-ChannelP-ChannelP-Channel
Vds Drain Source Breakdown Voltage30 V30 V-
Id Continuous Drain Current40 A40 A-
Rds On Drain Source Resistance9 mOhms9 mOhms-
Vgs th Gate Source Threshold Voltage3.1 V3.1 V-
Vgs Gate Source Voltage25 V25 V-
Qg Gate Charge45 nC45 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation52 W52 W-
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancement-
TradenameOptiMOSOptiMOSOptiMOS
PackagingReelReelReel
Height1.1 mm1.1 mm-
Length3.3 mm3.3 mm-
SeriesOptiMOS P3OptiMOS P3OptiMOS P3
Transistor Type1 P-Channel1 P-Channel1 P-Channel
Width3.3 mm3.3 mm-
BrandInfineon TechnologiesInfineon Technologies-
Forward Transconductance Min22 S22 S-
Fall Time5 ns5 ns-
Product TypeMOSFETMOSFET-
Rise Time11 ns11 ns-
Factory Pack Quantity50005000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time23 ns23 ns-
Typical Turn On Delay Time13 ns13 ns-
Part # AliasesBSZ120P03NS3GATMA1 BSZ12P3NS3GXT SP000709736BSZ120P03NS3EGATMA1 BSZ12P3NS3EGXT SP000709730-
Part Aliases--BSZ120P03NS3GATMA1 BSZ120P03NS3GXT SP000709736
Package Case--TSDSON-8
Id Continuous Drain Current--- 40 A
Vds Drain Source Breakdown Voltage--- 30 V
Rds On Drain Source Resistance--12 mOhms
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