BSZ120P03NS3E G

BSZ120P03NS3E G
Mfr. #:
BSZ120P03NS3E G
Manufacturer:
Infineon Technologies
Description:
MOSFET P-Ch -30V -40A TSDSON-8 OptiMOS P3
Lifecycle:
New from this manufacturer.
Datasheet:
BSZ120P03NS3E G Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TSDSON-8
Number of Channels:
1 Channel
Transistor Polarity:
P-Channel
Vds - Drain-Source Breakdown Voltage:
30 V
Id - Continuous Drain Current:
40 A
Rds On - Drain-Source Resistance:
9 mOhms
Vgs th - Gate-Source Threshold Voltage:
3.1 V
Vgs - Gate-Source Voltage:
25 V
Qg - Gate Charge:
45 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
52 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
OptiMOS
Packaging:
Reel
Height:
1.1 mm
Length:
3.3 mm
Series:
OptiMOS P3
Transistor Type:
1 P-Channel
Width:
3.3 mm
Brand:
Infineon Technologies
Forward Transconductance - Min:
22 S
Fall Time:
5 ns
Product Type:
MOSFET
Rise Time:
11 ns
Factory Pack Quantity:
5000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
23 ns
Typical Turn-On Delay Time:
13 ns
Part # Aliases:
BSZ120P03NS3EGATMA1 BSZ12P3NS3EGXT SP000709730
Tags
BSZ120P03NS3E, BSZ120P03NS, BSZ120P, BSZ120, BSZ12, BSZ1, BSZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Part # Mfg. Description Stock Price
BSZ120P03NS3EGATMA1
DISTI # V72:2272_06384848
Infineon Technologies AGTrans MOSFET P-CH 30V 40A 8-Pin TSDSON EP T/R
RoHS: Compliant
905
  • 500:$0.2207
  • 250:$0.3041
  • 100:$0.3265
  • 25:$0.4316
  • 10:$0.4843
  • 1:$0.5652
BSZ120P03NS3EGATMA1
DISTI # V36:1790_06384848
Infineon Technologies AGTrans MOSFET P-CH 30V 40A 8-Pin TSDSON EP T/R
RoHS: Compliant
0
    BSZ120P03NS3EGATMA1
    DISTI # BSZ120P03NS3EGATMA1TR-ND
    Infineon Technologies AGMOSFET P-CH 30V 40A TSDSON-8
    RoHS: Compliant
    Min Qty: 5000
    Container: Tape & Reel (TR)
    Temporarily Out of Stock
    • 5000:$0.2692
    BSZ120P03NS3EGATMA1
    DISTI # 32825692
    Infineon Technologies AGTrans MOSFET P-CH 30V 40A 8-Pin TSDSON EP T/R
    RoHS: Compliant
    5000
    • 5000:$0.2322
    BSZ120P03NS3EGATMA1
    DISTI # 31955319
    Infineon Technologies AGTrans MOSFET P-CH 30V 40A 8-Pin TSDSON EP T/R
    RoHS: Compliant
    905
    • 500:$0.2373
    • 250:$0.3269
    • 100:$0.3510
    • 35:$0.4640
    BSZ120P03NS3EGATMA1
    DISTI # BSZ120P03NS3EGATMA1
    Infineon Technologies AGTrans MOSFET P-CH 30V 40A 8-Pin TSDSON EP - Tape and Reel (Alt: BSZ120P03NS3EGATMA1)
    RoHS: Compliant
    Min Qty: 5000
    Container: Reel
    Americas - 0
    • 5000:$0.2089
    • 10000:$0.2014
    • 20000:$0.1941
    • 30000:$0.1876
    • 50000:$0.1842
    BSZ120P03NS3EGATMA1
    DISTI # SP000709730
    Infineon Technologies AGTrans MOSFET P-CH 30V 40A 8-Pin TSDSON EP (Alt: SP000709730)
    RoHS: Compliant
    Min Qty: 5000
    Europe - 0
    • 5000:€0.2849
    • 10000:€0.2329
    • 20000:€0.2139
    • 30000:€0.1969
    • 50000:€0.1829
    BSZ120P03NS3EGATMA1.
    DISTI # 31AC8239
    Infineon Technologies AGTransistor Polarity:P Channel,Continuous Drain Current Id:-40A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.009ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-2.5V,Power Dissipation Pd:52W,No. of Pins:8Pins0
    • 50000:$0.2370
    • 20000:$0.2380
    • 10000:$0.2390
    • 1:$0.2400
    BSZ120P03NS3EGATMA1
    DISTI # 49AC0114
    Infineon Technologies AGMOSFET, P-CH, -30V, -40A, TSDSON-8,Transistor Polarity:P Channel,Continuous Drain Current Id:-40A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.009ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-2.5V,Power RoHS Compliant: Yes3240
    • 1000:$0.2910
    • 500:$0.3150
    • 250:$0.3390
    • 100:$0.3630
    • 50:$0.4290
    • 25:$0.4960
    • 10:$0.5620
    • 1:$0.6700
    BSZ120P03NS3E G
    DISTI # 726-BSZ120P03NS3EG
    Infineon Technologies AGMOSFET P-Ch -30V -40A TSDSON-8 OptiMOS P3
    RoHS: Compliant
    0
    • 1:$0.6700
    • 10:$0.5620
    • 100:$0.3630
    • 1000:$0.2910
    • 5000:$0.2450
    BSZ120P03NS3EGATMA1
    DISTI # 726-BSZ120P03NS3EGAT
    Infineon Technologies AGMOSFET P-Ch -30V -40A TSDSON-8 OptiMOS P3
    RoHS: Compliant
    0
    • 1:$0.6700
    • 10:$0.5620
    • 100:$0.3630
    • 1000:$0.2910
    • 5000:$0.2450
    BSZ120P03NS3EGInfineon Technologies AG 109
      BSZ120P03NS3EGATMA1
      DISTI # 2839439
      Infineon Technologies AGMOSFET, P-CH, -30V, -40A, TSDSON-8
      RoHS: Compliant
      3480
      • 100:£0.3460
      • 25:£0.5590
      • 5:£0.6050
      BSZ120P03NS3EGATMA1
      DISTI # 2839439
      Infineon Technologies AGMOSFET, P-CH, -30V, -40A, TSDSON-8
      RoHS: Compliant
      3240
      • 100:$0.6610
      • 25:$0.8100
      • 5:$0.9300
      BSZ120P03NS3EGInfineon Technologies AG-30V,-40A,P-channel power MOSFET100
      • 1:$0.4300
      • 100:$0.3600
      • 500:$0.3200
      • 1000:$0.3100
      Image Part # Description
      BSZ120P03NS3GATMA1

      Mfr.#: BSZ120P03NS3GATMA1

      OMO.#: OMO-BSZ120P03NS3GATMA1

      MOSFET P-Ch -30V -40A TSDSON-8 OptiMOS P3
      BSZ120P03NS3 G

      Mfr.#: BSZ120P03NS3 G

      OMO.#: OMO-BSZ120P03NS3-G

      MOSFET P-Ch -30V -40A TSDSON-8 OptiMOS P3
      BSZ120P03NS3EGATMA1

      Mfr.#: BSZ120P03NS3EGATMA1

      OMO.#: OMO-BSZ120P03NS3EGATMA1

      MOSFET P-Ch -30V -40A TSDSON-8 OptiMOS P3
      BSZ120P03N

      Mfr.#: BSZ120P03N

      OMO.#: OMO-BSZ120P03N-1190

      New and Original
      BSZ120P03NS3

      Mfr.#: BSZ120P03NS3

      OMO.#: OMO-BSZ120P03NS3-1190

      New and Original
      BSZ120P03NS3 G

      Mfr.#: BSZ120P03NS3 G

      OMO.#: OMO-BSZ120P03NS3-G-1190

      Trans MOSFET P-CH 30V 40A 8-Pin TSDSON T/R (Alt: BSZ120P03NS3 G)
      BSZ120P03NS3EG

      Mfr.#: BSZ120P03NS3EG

      OMO.#: OMO-BSZ120P03NS3EG-1190

      -30V,-40A,P-channel power MOSFET
      BSZ120P03NS3G

      Mfr.#: BSZ120P03NS3G

      OMO.#: OMO-BSZ120P03NS3G-1190

      New and Original
      BSZ120P03NS3GATMA1 , TG1

      Mfr.#: BSZ120P03NS3GATMA1 , TG1

      OMO.#: OMO-BSZ120P03NS3GATMA1-TG1-1190

      New and Original
      BSZ120P03NS3E G

      Mfr.#: BSZ120P03NS3E G

      OMO.#: OMO-BSZ120P03NS3E-G-317

      RF Bipolar Transistors MOSFET P-Ch -30V -40A TSDSON-8 OptiMOS P3
      Availability
      Stock:
      Available
      On Order:
      1988
      Enter Quantity:
      Current price of BSZ120P03NS3E G is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      1
      $0.67
      $0.67
      10
      $0.56
      $5.62
      100
      $0.36
      $36.30
      1000
      $0.29
      $291.00
      Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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