PartNumber | BSZ12DN20NS3 G | BSZ12DN20NNS3G | BSZ12DN20NS3GATMA1 |
Description | MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3 | MOSFET N-CH 200V 11.3A 8TSDSON | |
Manufacturer | Infineon | - | - |
Product Category | MOSFET | - | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | TSDSON-8 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 200 V | - | - |
Id Continuous Drain Current | 11.3 A | - | - |
Rds On Drain Source Resistance | 108 mOhms | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 50 W | - | - |
Configuration | Single | - | - |
Packaging | Reel | - | - |
Height | 1.1 mm | - | - |
Length | 3.3 mm | - | - |
Transistor Type | 1 N-Channel | - | - |
Width | 3.3 mm | - | - |
Brand | Infineon Technologies | - | - |
Forward Transconductance Min | 12 S, 6 S | - | - |
Product Type | MOSFET | - | - |
Factory Pack Quantity | 5000 | - | - |
Subcategory | MOSFETs | - | - |
Part # Aliases | BSZ12DN20NS3GATMA1 BSZ12DN2NS3GXT SP000781784 | - | - |
Unit Weight | 0.003527 oz | - | - |