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BSZ12DN20NS3 G

BSZ12DN20NS3 G
Mfr. #:
BSZ12DN20NS3 G
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3
Lifecycle:
New from this manufacturer.
Datasheet:
BSZ12DN20NS3 G Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
BSZ12DN20NS3 G more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TSDSON-8
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
200 V
Id - Continuous Drain Current:
11.3 A
Rds On - Drain-Source Resistance:
108 mOhms
Vgs - Gate-Source Voltage:
20 V
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
50 W
Configuration:
Single
Packaging:
Reel
Height:
1.1 mm
Length:
3.3 mm
Transistor Type:
1 N-Channel
Width:
3.3 mm
Brand:
Infineon Technologies
Forward Transconductance - Min:
12 S, 6 S
Product Type:
MOSFET
Factory Pack Quantity:
5000
Subcategory:
MOSFETs
Part # Aliases:
BSZ12DN20NS3GATMA1 BSZ12DN2NS3GXT SP000781784
Unit Weight:
0.003527 oz
Tags
BSZ12DN20NS, BSZ12D, BSZ12, BSZ1, BSZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Wireless Charging Solutions
Infineon Wireless Charging Solutions meet today's growing demand for wireless charge applications like smartphones, wearables, notebooks, and low-voltage drive devices. Infineon's highly efficient and cost-effective devices enable state-of-the-art solutions for the transmitter unit for inductive and resonant standards. Infineon devices are ready-to-use for the adapter/charger, fostering time-to-market of full wireless charging solutions. Infineon is a member of the Wireless Power Consortium and the AirFuel Alliance.
Resonant Wireless Charging - Consumer Applications
Infineon Technologies Resonant Wireless Charging - Consumer Applications takes the lead in fast switching in power transfer topologies. With the best figure of merit (FOM) for gate charge times, RDS(on) and Coss they enable 6.78MHz inverter designs. Superior power MOSFET technology addresses frequency switching implementations, especially in the 30-10V areas for class D inverter designs and in the 150-250V voltage class for class E inverter designs.
Part # Mfg. Description Stock Price
BSZ12DN20NS3GATMA1
DISTI # V72:2272_06384561		Infineon Technologies AGTrans MOSFET N-CH 200V 11.3A 8-Pin TSDSON EP T/R
RoHS: Compliant		4816
  • 1:$0.5330
BSZ12DN20NS3GATMA1
DISTI # V36:1790_06384561		Infineon Technologies AGTrans MOSFET N-CH 200V 11.3A 8-Pin TSDSON EP T/R
RoHS: Compliant		0
  • 5000000:$0.4159
  • 2500000:$0.4161
  • 500000:$0.4428
  • 50000:$0.4905
  • 5000:$0.4986
BSZ12DN20NS3GATMA1
DISTI # BSZ12DN20NS3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 200V 11.3A 8TSDSON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		5922In Stock
  • 1000:$0.5791
  • 500:$0.7336
  • 100:$0.8880
  • 10:$1.1390
  • 1:$1.2700
BSZ12DN20NS3GATMA1
DISTI # BSZ12DN20NS3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 200V 11.3A 8TSDSON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		5922In Stock
  • 1000:$0.5791
  • 500:$0.7336
  • 100:$0.8880
  • 10:$1.1390
  • 1:$1.2700
BSZ12DN20NS3GATMA1
DISTI # BSZ12DN20NS3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 200V 11.3A 8TSDSON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		5000In Stock
  • 10000:$0.4798
  • 5000:$0.4985
BSZ12DN20NS3 G
DISTI # 32907815		Infineon Technologies AG05000
  • 17:$1.5375
BSZ12DN20NS3GATMA1
DISTI # 33936972		Infineon Technologies AGTrans MOSFET N-CH 200V 11.3A 8-Pin TSDSON EP T/R
RoHS: Compliant		4816
  • 15:$0.5330
BSZ12DN20NS3GATMA1
DISTI # BSZ12DN20NS3GATMA1		Infineon Technologies AGTrans MOSFET N-CH 200V 11.3A 8-Pin TSDSON T/R - Bulk (Alt: BSZ12DN20NS3GATMA1)
RoHS: Compliant
Min Qty: 782
Container: Bulk		Americas - 0
  • 7820:$0.4059
  • 3910:$0.4129
  • 2346:$0.4279
  • 1564:$0.4439
  • 782:$0.4609
BSZ12DN20NS3GATMA1
DISTI # BSZ12DN20NS3GATMA1		Infineon Technologies AGTrans MOSFET N-CH 200V 11.3A 8-Pin TSDSON T/R - Tape and Reel (Alt: BSZ12DN20NS3GATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 50000:$0.4529
  • 30000:$0.4609
  • 20000:$0.4769
  • 10000:$0.4949
  • 5000:$0.5139
BSZ12DN20NS3GATMA1
DISTI # BSZ12DN20NS3 G		Infineon Technologies AGTrans MOSFET N-CH 200V 11.3A 8-Pin TSDSON T/R (Alt: BSZ12DN20NS3 G)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Asia - 0
  • 250000:$0.4519
  • 125000:$0.4577
  • 50000:$0.4636
  • 25000:$0.4697
  • 15000:$0.4824
  • 10000:$0.4958
  • 5000:$0.5100
BSZ12DN20NS3GATMA1
DISTI # BSZ12DN20NS3G		Infineon Technologies AGTrans MOSFET N-CH 200V 11.3A 8-Pin TSDSON T/R - Bulk (Alt: BSZ12DN20NS3G)
RoHS: Not Compliant
Min Qty: 758
Container: Bulk		Americas - 0
  • 7580:$0.4569
  • 3790:$0.4649
  • 2274:$0.4809
  • 1516:$0.4999
  • 758:$0.5179
BSZ12DN20NS3GATMA1
DISTI # SP000781784		Infineon Technologies AGTrans MOSFET N-CH 200V 11.3A 8-Pin TSDSON T/R (Alt: SP000781784)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Europe - 0
  • 50000:€0.4159
  • 30000:€0.4479
  • 20000:€0.4849
  • 10000:€0.5289
  • 5000:€0.6469
BSZ12DN20NS3GATMA1
DISTI # 13AC8354		Infineon Technologies AGMOSFET, N-CH, 200V, 11.3A, TSDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:11.3A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.108ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes779
  • 1000:$0.6120
  • 500:$0.7760
  • 250:$0.8880
  • 100:$1.0000
  • 50:$1.0900
  • 25:$1.1800
  • 10:$1.2700
  • 1:$1.4300
BSZ12DN20NS3 G
DISTI # 726-BSZ12DN20NS3G		Infineon Technologies AGMOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3
RoHS: Compliant		13365
  • 1:$1.1700
  • 10:$1.0000
  • 100:$0.7680
  • 500:$0.6790
  • 1000:$0.5360
  • 5000:$0.4750
BSZ12DN20NS3GInfineon Technologies AGPower Field-Effect Transistor, 11.3A I(D), 200V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		14295
  • 1000:$0.4700
  • 500:$0.5000
  • 100:$0.5200
  • 25:$0.5400
  • 1:$0.5800
BSZ12DN20NS3GATMA1Infineon Technologies AGPower Field-Effect Transistor, 11.3A I(D), 200V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		70155
  • 1000:$0.4200
  • 500:$0.4400
  • 100:$0.4600
  • 25:$0.4800
  • 1:$0.5200
BSZ12DN20NS3GATMA1
DISTI # 8259257P		Infineon Technologies AGMOSFET N-CH 11.3A 200V OPTIMOS3 TSDSON8, RL3720
  • 100:£0.3740
BSZ12DN20NS3GATMA1
DISTI # 2725826		Infineon Technologies AGMOSFET, N-CH, 200V, 11.3A, TSDSON5808
  • 500:£0.6170
  • 250:£0.7070
  • 100:£0.7970
  • 10:£1.0600
  • 1:£1.3100
BSZ12DN20NS3 G
DISTI # C1S322000454510		Infineon Technologies AGTrans MOSFET N-CH 200V 11.3A 8-Pin TSDSON EP T/R
RoHS: Compliant		5000
  • 5000:$0.4900
  • 1000:$0.5570
  • 500:$0.5930
  • 200:$0.6410
  • 100:$0.6750
  • 50:$0.7910
  • 10:$0.9290
  • 5:$1.2300
BSZ12DN20NS3GATMA1
DISTI # 2725826		Infineon Technologies AGMOSFET, N-CH, 200V, 11.3A, TSDSON
RoHS: Compliant		719
  • 1000:$0.9270
  • 500:$1.1800
  • 100:$1.5200
  • 10:$1.9200
  • 1:$2.1700
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Availability
Stock:
12
On Order:
1995
Enter Quantity:
Current price of BSZ12DN20NS3 G is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$1.17
$1.17
10
$1.00
$10.00
100
$0.77
$76.80
500
$0.68
$339.50
1000
$0.54
$536.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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