 |  |  | |
| PartNumber | BSZ12DN20NS3 G | BSZ12DN20NS3GATMA1 | BSZ12DN20NS3G |
| Description | MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3 | MOSFET N-CH 200V 11.3A 8TSDSON | Darlington Transistors MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3 |
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TSDSON-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 200 V | - | - |
| Id Continuous Drain Current | 11.3 A | - | - |
| Rds On Drain Source Resistance | 108 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 50 W | - | - |
| Configuration | Single | - | - |
| Packaging | Reel | - | - |
| Height | 1.1 mm | - | - |
| Length | 3.3 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 3.3 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 12 S, 6 S | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 5000 | - | - |
| Subcategory | MOSFETs | - | - |
| Part # Aliases | BSZ12DN20NS3GATMA1 BSZ12DN2NS3GXT SP000781784 | - | - |
| Unit Weight | 0.003527 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
BSZ12DN20NS3 G | MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3 | |
| BSZ12DN20NS3GATMA1 | MOSFET N-CH 200V 11.3A 8TSDSON | ||
| BSZ12DN20NS3 G | MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3 | ||
| BSZ12DN20NS3G | Darlington Transistors MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3 |