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If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| Part # | Mfg. | Description | Stock | Price |
|---|---|---|---|---|
| BSZ12DN20NS3GATMA1 DISTI # BSZ12DN20NS3GATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 200V 11.3A 8TSDSON RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR) | On Order |
|
| BSZ12DN20NS3GATMA1 DISTI # BSZ12DN20NS3GATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 200V 11.3A 8TSDSON RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Temporarily Out of Stock |
|
| BSZ12DN20NS3GATMA1 DISTI # BSZ12DN20NS3GATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 200V 11.3A 8TSDSON RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Temporarily Out of Stock |
|
| BSZ12DN20NS3GATMA1 DISTI # BSZ12DN20NS3GATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 200V 11.3A 8-Pin TSDSON T/R - Tape and Reel (Alt: BSZ12DN20NS3GATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel | Americas - 0 |
|
| BSZ12DN20NS3GATMA1 DISTI # SP000781784 | Infineon Technologies AG | Trans MOSFET N-CH 200V 11.3A 8-Pin TSDSON T/R (Alt: SP000781784) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel | Europe - 0 |
|
| BSZ12DN20NS3GATMA1 DISTI # BSZ12DN20NS3 G | Infineon Technologies AG | Trans MOSFET N-CH 200V 11.3A 8-Pin TSDSON T/R (Alt: BSZ12DN20NS3 G) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel | Asia - 0 | |
| BSZ12DN20NS3GATMA1 DISTI # 13AC8354 | Infineon Technologies AG | MOSFET, N-CH, 200V, 11.3A, TSDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:11.3A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.108ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power , RoHS Compliant: Yes | 1416 |
|
| BSZ12DN20NS3 G DISTI # 726-BSZ12DN20NS3G | Infineon Technologies AG | MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3 RoHS: Compliant | 281 |
|
| BSZ12DN20NS3GATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 11.3A I(D), 200V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 76915 |
|
| BSZ12DN20NS3GATMA1 DISTI # 8259257P | Infineon Technologies AG | MOSFET N-CH 11.3A 200V OPTIMOS3 TSDSON8, RL | 4990 |
|
| BSZ12DN20NS3GATMA1 DISTI # 2725826 | Infineon Technologies AG | MOSFET, N-CH, 200V, 11.3A, TSDSON RoHS: Compliant | 1236 |
|
| BSZ12DN20NS3GATMA1 DISTI # 2725826 | Infineon Technologies AG | MOSFET, N-CH, 200V, 11.3A, TSDSON RoHS: Compliant | 1241 |
|
| Image | Part # | Description |
|---|---|---|
|
Mfr.#: BSZ12DN20NS3 G OMO.#: OMO-BSZ12DN20NS3-G |
MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3 |
|
Mfr.#: BSZ12DN20NNS3G OMO.#: OMO-BSZ12DN20NNS3G-1190 |
New and Original |
|
|
Mfr.#: BSZ12DN20NS3 G OMO.#: OMO-BSZ12DN20NS3-G-1190 |
MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3 |
|
Mfr.#: BSZ12DN20NS3GATMA1 |
MOSFET N-CH 200V 11.3A 8TSDSON |
|
|
Mfr.#: BSZ12DN20NS3G OMO.#: OMO-BSZ12DN20NS3G-124 |
Darlington Transistors MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3 |
