CSD18536KTT vs CSD18536KCS vs CSD18536KTTT

PartNumber	CSD18536KTT	CSD18536KCS	CSD18536KTTT
Description	MOSFET 60V, N ch NexFET MOSFETG , single D2PAK, 1.6mOhm 3-DDPAK/TO-263 -55 to 175	MOSFET 60V, N ch NexFET MOSFETG , single TO-220, 1.6mOhm 3-TO-220 -55 to 175	MOSFET 60V, N ch NexFET MOSFETG , single D2PAK, 1.6mOhm 3-DDPAK/TO-263 -55 to 175
Manufacturer	Texas Instruments	Texas Instruments	Texas Instruments
Product Category	MOSFET	MOSFET	MOSFET
RoHS	E	E	N
Technology	Si	Si	Si
Mounting Style	SMD/SMT	Through Hole	SMD/SMT
Package / Case	TO-263-3	TO-220-3	TO-263-3
Number of Channels	1 Channel	1 Channel	1 Channel
Transistor Polarity	N-Channel	N-Channel	N-Channel
Vds Drain Source Breakdown Voltage	60 V	60 V	60 V
Id Continuous Drain Current	200 A	349 A	200 A
Rds On Drain Source Resistance	1.7 mOhms	1.6 mOhms	1.7 mOhms
Vgs th Gate Source Threshold Voltage	1.8 V	1.4 V	1.8 V
Vgs Gate Source Voltage	20 V	10 V	20 V
Qg Gate Charge	140 nC	108 nC	140 nC
Minimum Operating Temperature	- 55 C	- 55 C	- 55 C
Maximum Operating Temperature	+ 175 C	+ 175 C	+ 175 C
Pd Power Dissipation	375 W	375 W	375 W
Configuration	Single	Single	Single
Channel Mode	Enhancement	Enhancement	Enhancement
Tradename	NexFET	NexFET	NexFET
Packaging	Reel	Tube	Reel
Height	19.7 mm	16.51 mm	19.7 mm
Length	9.25 mm	10.67 mm	9.25 mm
Series	CSD18536KTT	CSD18536KCS	CSD18536KTT
Transistor Type	1 N-Channel	1 N-Channel	1 N-Channel
Width	10.26 mm	4.7 mm	10.26 mm
Brand	Texas Instruments	Texas Instruments	Texas Instruments
Forward Transconductance Min	312 S	312 S	312 S
Fall Time	4 ns	4 ns	4 ns
Moisture Sensitive	Yes	-	Yes
Product Type	MOSFET	MOSFET	MOSFET
Rise Time	5 ns	5 ns	5 ns
Factory Pack Quantity	500	50	50
Subcategory	MOSFETs	MOSFETs	MOSFETs
Typical Turn Off Delay Time	24 ns	24 ns	24 ns
Typical Turn On Delay Time	11 ns	11 ns	11 ns
Unit Weight	-	0.063493 oz	-