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CSD18536KTTT

CSD18536KTTT
Mfr. #:
CSD18536KTTT
Description:
MOSFET 60V, N ch NexFET MOSFETG , single D2PAK, 1.6mOhm 3-DDPAK/TO-263 -55 to 175
Lifecycle:
New from this manufacturer.
Datasheet:
CSD18536KTTT Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
CSD18536KTTT more Information CSD18536KTTT Product Details
Product Attribute
Attribute Value
Manufacturer:
Texas Instruments
Product Category:
MOSFET
RoHS:
N
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-263-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
60 V
Id - Continuous Drain Current:
200 A
Rds On - Drain-Source Resistance:
1.7 mOhms
Vgs th - Gate-Source Threshold Voltage:
1.8 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
140 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
375 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
NexFET
Packaging:
Reel
Height:
19.7 mm
Length:
9.25 mm
Series:
CSD18536KTT
Transistor Type:
1 N-Channel
Width:
10.26 mm
Brand:
Texas Instruments
Forward Transconductance - Min:
312 S
Fall Time:
4 ns
Moisture Sensitive:
Yes
Product Type:
MOSFET
Rise Time:
5 ns
Factory Pack Quantity:
50
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
24 ns
Typical Turn-On Delay Time:
11 ns
Tags
CSD18536, CSD1853, CSD185, CSD18, CSD1, CSD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Tube of 50, N-Channel MOSFET, 349 A, 60 V, 3-Pin D2PAK Texas Instruments CSD18536KTTT
***as Instruments
60V, N ch NexFET MOSFET™, single D2PAK, 1.6mOhm 3-DDPAK/TO-263 -55 to 175
***ical
Trans MOSFET N-CH Si 60V 200A 4-Pin(3+Tab) TO-263 T/R
***et
Trans MOSFET N-CH 60V 200A 3-Pin TO-263 T/R
***i-Key
MOSFET N-CH 60V 200A D2PAK
***ark
Mosfet, N-Ch, 60V, 349A, To-263-3; Transistor Polarity:n Channel; Continuous Drain Current Id:349A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.0013Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 60V, 349A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:349A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0013ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Power Dissipation Pd:375W; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 2 - 1 year; SVHC:No SVHC (15-Jan-2019)
***nell
MOSFET, N-CH, 60V, 349A, TO-263-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:349A; Tensione Drain Source Vds:60V; Resistenza di Attivazione Rds(on):0.0013ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:1.8V; Dissipazione di Potenza Pd:375W; Modello Case Transistor:TO-263; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 2 - 1 anno; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2019)
***as Instr.
This 60-V, 1.3-mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
NexFET N-Channel Power MOSFETs
OMO Electronic NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.
TI N-Channel 8-23-12
NexFET™ Power MOSFETs
OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
Part # Description Stock Price
CSD18536KTTT
DISTI # 32366250		Trans MOSFET N-CH Si 60V 200A 4-Pin(3+Tab) TO-263 T/R
RoHS: Compliant		2050
  • 250:$3.4272
  • 100:$3.7879
  • 50:$4.1489
CSD18536KTTT
DISTI # 296-44122-1-ND		MOSFET N-CH 60V 200A D2PAK
RoHS: Not compliant
Min Qty: 1
Container: Cut Tape (CT)		300In Stock
  • 10:$5.2350
  • 1:$5.8600
CSD18536KTTT
DISTI # 296-44122-6-ND		MOSFET N-CH 60V 200A D2PAK
RoHS: Not compliant
Min Qty: 1
Container: Digi-Reel®		300In Stock
  • 10:$5.2350
  • 1:$5.8600
CSD18536KTTT
DISTI # 296-44122-2-ND		MOSFET N-CH 60V 200A DDPAK
RoHS: Not compliant
Min Qty: 50
Container: Tape & Reel (TR)		250In Stock
  • 250:$3.7610
  • 100:$4.1677
  • 50:$4.5742
CSD18536KTTT
DISTI # V39:1801_14839651		Trans MOSFET N-CH Si 60V 200A 4-Pin(3+Tab) TO-263 T/R
RoHS: Compliant		0
    CSD18536KTTT
    DISTI # V72:2272_14839651    		Trans MOSFET N-CH Si 60V 200A 4-Pin(3+Tab) TO-263 T/R
    RoHS: Compliant    		0
      CSD18536KTTT
      DISTI # CSD18536KTTT      		Trans MOSFET N-CH 60V 200A 3-Pin TO-263 T/R - Tape and Reel (Alt: CSD18536KTTT)
      RoHS: Not Compliant
      Min Qty: 150
      Container: Reel      		Americas - 0
      • 1500:$2.4900
      • 750:$2.5900
      • 450:$2.6900
      • 300:$2.7900
      • 150:$2.8900
      CSD18536KTTT60V, N ch NexFET MOSFET™, single D2PAK, 1.6mOhm500
      • 1000:$2.3100
      • 750:$2.3600
      • 500:$2.7200
      • 250:$3.1300
      • 100:$3.3500
      • 25:$3.7400
      • 10:$4.0100
      • 1:$4.4500
      CSD18536KTT
      DISTI # 595-CSD18536KTT      		MOSFET KTT pkg spin from CSD18536KCS
      RoHS: Compliant      		731
      • 1:$4.7800
      • 10:$4.2900
      • 100:$3.5100
      • 250:$3.3000
      • 500:$2.9900
      • 1000:$2.5200
      • 2500:$2.3900
      CSD18536KTTT
      DISTI # 595-CSD18536KTTT      		MOSFET SMALL REEL OF KTT PKG
      RoHS: Not compliant      		130
      • 1:$5.3800
      • 10:$4.8400
      • 50:$4.8400
      • 100:$3.9600
      • 250:$3.7200
      • 500:$3.3700
      • 1000:$2.8400
      • 2500:$2.7000
      CSD18536KTTT
      DISTI # 1330153P      		60V N-CH NEXFET MOSFET DDPAK, RL60
      • 500:£2.5800
      • 250:£2.8700
      • 50:£3.4900
      • 10:£4.0000
      CSD18536KTTT .
      DISTI # 2545001      		MOSFET, N-CH, 60V, 349A, TO-263-3
      RoHS: Compliant      		0
      • 10:$7.1700
      • 1:$8.0100
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      Availability
      Stock:
      90
      On Order:
      2073
      Enter Quantity:
      Current price of CSD18536KTTT is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      1
      $5.38
      $5.38
      10
      $4.84
      $48.40
      Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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