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| PartNumber | CSD19533Q5A | CSD19533Q5AT | CSD19533Q5AQ |
| Description | MOSFET 100V 7.8mOhm N-CH Pwr MOSFET | MOSFET 100V, 7.8mOhm SON5x6 N-ch NexFET | |
| Manufacturer | Texas Instruments | Texas Instruments | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | E | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | VSONP-8 | VSONP-8 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V | - |
| Id Continuous Drain Current | 100 A | 100 A | - |
| Rds On Drain Source Resistance | 9.4 mOhms | 9.4 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2.2 V | 2.2 V | - |
| Vgs Gate Source Voltage | 10 V | 10 V | - |
| Qg Gate Charge | 27 nC | 27 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 96 W | 96 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | NexFET | NexFET | - |
| Packaging | Reel | Reel | - |
| Height | 1 mm | 1 mm | - |
| Length | 6 mm | 6 mm | - |
| Series | CSD19533Q5A | CSD19533Q5A | - |
| Transistor Type | 1 N-Channel Power MOSFET | 1 N-Channel | - |
| Width | 4.9 mm | 4.9 mm | - |
| Brand | Texas Instruments | Texas Instruments | - |
| Fall Time | 5 ns | 5 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 6 ns | 6 ns | - |
| Factory Pack Quantity | 2500 | 250 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 16 ns | 16 ns | - |
| Typical Turn On Delay Time | 6 ns | 6 ns | - |
| Forward Transconductance Min | - | 63 S | - |