CSD19533Q5A

Mfr. #:: CSD19533Q5A
Description:: MOSFET 100V 7.8mOhm N-CH Pwr MOSFET
Lifecycle:: New from this manufacturer.
Datasheet:: CSD19533Q5A Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:
More Information:: CSD19533Q5A more Information CSD19533Q5A Product Details

Product Attribute
Attribute Value

Manufacturer:: Texas Instruments

Product Category:: MOSFET

RoHS:: E

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: VSONP-8

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 100 V

Id - Continuous Drain Current:: 100 A

Rds On - Drain-Source Resistance:: 9.4 mOhms

Vgs th - Gate-Source Threshold Voltage:: 2.2 V

Vgs - Gate-Source Voltage:: 10 V

Qg - Gate Charge:: 27 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 96 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: NexFET

Packaging:: Reel

Height:: 1 mm

Length:: 6 mm

Series:: CSD19533Q5A

Transistor Type:: 1 N-Channel Power MOSFET

Width:: 4.9 mm

Brand:: Texas Instruments

Fall Time:: 5 ns

Product Type:: MOSFET

Rise Time:: 6 ns

Factory Pack Quantity:: 2500

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 16 ns

Typical Turn-On Delay Time:: 6 ns

Tags: CSD19533Q, CSD19533, CSD1953, CSD19, CSD1, CSD

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CSD19533Q5A Ratings and Reviews

R***i

2019-05-16

I***V

Very good

2019-07-02

I***o

The goods did not receive, somewhere he disappeared. I could not open the litter, time passed and time expired. Please return the money or reship the goods.

2019-03-27

T***i

Fast shipping. Good package.

2019-05-26

CSD19533Q5A Description

***as Instruments: 100-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 9.5 mOhm 8-VSONP -55 to 150

***nell: MOSFET, N CHANNEL, 100V, 100A, SON-8; Polarité transistor: Canal N; Courant de drain Id: 100A; Tension Vds max..: 100V; Résistance Rds(on): 0.0078ohm; Tension, mesure Rds: 10V; Tension de seuil Vgs: 2.8V; Dissipation de puissa

***ark: Mosfet, N Channel, 100V, 100A, Son-8; Transistor Polarity:n Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.0078Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V Rohs Compliant: Yes

***ark: Mosfet Transistor, N Channel, 70 A, 100 V, 0.009 Ohm, 15 V, 4 V

***emi: Power MOSFET, N-Channel, 100 V, 70 A, 10.8 mΩ

***ical: Trans MOSFET N-CH 100V 70A 3-Pin(3+Tab) TO-220 Tube

***nell: MOSFET, N-CH, 100V, 70A, TO-220-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 70A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.009ohm; Rds(on) Test Voltage Vgs: 15V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 72W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018)

***icroelectronics: N-channel 100 V, 0.0065 Ohm, 16 A PowerFLAT(TM) 5x6 STripFET(TM) III Power MOSFET

***et: Trans MOSFET N-CH 100V 82A 8-Pin Power Flat T/R

*** Electronic Components: MOSFET N-Ch 100V 0.0065 Ohm 16A STripFET III MOS

***i-Key: MOSFET N CH 100V 82A PWRFLAT 5X6

***r Electronics: Power Field-Effect Transistor, 58A I(D), 100V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***S: French Electronic Distributor since 1988

***Yang: Trans MOSFET N-CH 75V 85A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel

***ure Electronics: Single N-Channel 75 V 160 W 118 nC PowerTrench Surface Mount Mosfet - TO-263-3

***emi: N-Channel PowerTrench® MOSFET 75V, 85A, 8.8mΩ

***r Electronics: Power Field-Effect Transistor, 85A I(D), 75V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

***nell: MOSFET, N CH, 75V, 85A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:75V; On Resistance Rds(on):0.0073ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:160W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

***ineon SCT: 75V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 75A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

***ark: T&R / MOSFET, 75V, 75A, 8.5 mOhm, 48 nC Qg, PQFN 5x6

***et: Trans MOSFET N-CH 75V 14A 8-Pin PQFN T/R

***ineon: Benefits: RoHS Compliant | Target Applications: Battery Operated Drive; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs

***ure Electronics: Single N-Channel 100 V 8.2 mOhm 42 nC OptiMOS Power Mosfet - DPAK

***ment14 APAC: MOSFET, N-CH, 100V, 80A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Source Voltage Vds:100V; On Resistance

***ineon SCT: Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TO252-3, RoHS

***ark: MOSFET, N-CH, 100V, 80A, 175DEG C, 125W; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:80A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.7V RoHS Compliant: Yes

***nell: MOSFET, N-CH, 100V, 80A, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 80A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.007ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.7V; Power Dissipation Pd: 125W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: OptiMOS 3 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon: The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)

***ure Electronics: Single N-Channel 100 V 9 mOhm 101 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a PQFN package, PG-TDSON-8, RoHS

*** Source Electronics: Trans MOSFET N-CH 100V 13A 8-Pin PQFN EP T/R / MOSFET N-CH 100V 13A 8-PQFN

***(Formerly Allied Electronics): MOSFET, 100V, 100A, 9.0 mOhm, 65 nC Qg,PQFN 5x6

***ineon: Benefits: RoHS Compliant | Target Applications: Battery Operated Drive; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs

***nell: MOSFET, N-CH, 100V, 13A, PQFN-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 13A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0075ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 3.6W; Transistor Case Style: PQFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (27-Jun-2018)

***: This 100 V, 7.8 mΩ, SON 5 mm × 6 mm NexFET power MOSFET is designed to minimize losses in power conversion applications.

CSD19533Q5A More Information

NexFET N-Channel Power MOSFETs: OMO Electronic NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.

TI N-Channel 8-23-12

NexFET™ Power MOSFETs: OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

Market price

Part #	Description	Stock	Price
CSD19533Q5AT DISTI # V98:2334_07248858	Trans MOSFET N-CH Si 100V 100A 8-Pin VSONP EP T/R RoHS: Compliant	47	25:$1.2046 10:$1.2174 1:$1.4182
CSD19533Q5A DISTI # 296-37479-1-ND	MOSFET N-CH 100V 100A 8SON RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	9281In Stock	1000:$0.7138 500:$0.9041 100:$1.1659 10:$1.4750 1:$1.6700
CSD19533Q5A DISTI # 296-37479-6-ND	MOSFET N-CH 100V 100A 8SON RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	9281In Stock	1000:$0.7138 500:$0.9041 100:$1.1659 10:$1.4750 1:$1.6700
CSD19533Q5A DISTI # 296-37479-2-ND	MOSFET N-CH 100V 100A 8SON RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	7500In Stock	5000:$0.6145 2500:$0.6468
CSD19533Q5AT DISTI # 296-44472-1-ND	MOSFET N-CH 100V 100A VSONP RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1730In Stock	100:$1.2852 10:$1.6260 1:$1.8400
CSD19533Q5AT DISTI # 296-44472-6-ND	MOSFET N-CH 100V 100A VSONP RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1730In Stock	100:$1.2852 10:$1.6260 1:$1.8400
CSD19533Q5AT DISTI # 296-44472-2-ND	MOSFET N-CH 100V 100A VSONP RoHS: Compliant Min Qty: 250 Container: Tape & Reel (TR)	1500In Stock	1250:$0.7640 750:$0.8454 500:$0.9677 250:$1.0950
CSD19533Q5AT DISTI # 27148833	Trans MOSFET N-CH Si 100V 100A 8-Pin VSONP EP T/R RoHS: Compliant	47	25:$1.2046 11:$1.2174
CSD19533Q5A DISTI # CSD19533Q5A	Trans MOSFET N-CH 100V 100A 8-Pin SON T/R (Alt: CSD19533Q5A) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 2500	2500:€0.8449 5000:€0.6909 10000:€0.6329 15000:€0.5429 25000:€0.5069
CSD19533Q5A DISTI # CSD19533Q5A	Trans MOSFET N-CH 100V 100A 8-Pin SON T/R - Tape and Reel (Alt: CSD19533Q5A) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.6089 5000:$0.5799 10000:$0.5599 15000:$0.5409 25000:$0.5259
CSD19533Q5A DISTI # CSD19533Q5A	Trans MOSFET N-CH 100V 100A 8-Pin SON T/R (Alt: CSD19533Q5A) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 0
CSD19533Q5AT DISTI # CSD19533Q5AT	Trans MOSFET N-CH 100V 100A 8-Pin SON T/R (Alt: CSD19533Q5AT) RoHS: Compliant Min Qty: 250 Container: Tape and Reel	Asia - 0
CSD19533Q5AT DISTI # CSD19533Q5AT	Trans MOSFET N-CH 100V 100A 8-Pin SON T/R - Tape and Reel (Alt: CSD19533Q5AT) RoHS: Compliant Min Qty: 750 Container: Reel	Americas - 0	750:$0.6709 1250:$0.6389 2000:$0.6179 3750:$0.5969 7500:$0.5799
CSD19533Q5AT DISTI # CSD19533Q5AT	Trans MOSFET N-CH 100V 100A 8-Pin SON T/R (Alt: CSD19533Q5AT) RoHS: Compliant Min Qty: 250 Container: Tape and Reel	Europe - 0	250:€0.8519 500:€0.7589 1000:€0.7569 1500:€0.7549 2500:€0.7529
CSD19533Q5A DISTI # 41X5176	MOSFET, N CHANNEL, 100V, 100A, SON-8,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0078ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V , RoHS Compliant: Yes	485	1:$1.3800 10:$1.1800 25:$1.0900 50:$0.9960 100:$0.9040 250:$0.8510 500:$0.7980 1000:$0.6300
CSD19533Q5A	100V, 7.8mOhm, SON5x6 N-Channel NexFET&#153,Power MOSFET	5848	1000:$0.4800 750:$0.5200 500:$0.6300 250:$0.7600 100:$0.8200 25:$0.9400 10:$1.0100 1:$1.1300
CSD19533Q5AT	100V, 7.8mOhm, SON5x6 N-Channel NexFET&#153,Power MOSFET	500	1000:$0.5300 750:$0.5700 500:$0.7000 250:$0.8300 100:$0.9000 25:$1.0400 10:$1.1200 1:$1.2500
CSD19533Q5A DISTI # 595-CSD19533Q5A	MOSFET 100V 7.8mOhm N-CH Pwr MOSFET RoHS: Compliant	15233	1:$1.3800 10:$1.1800 100:$0.9040 500:$0.7980 1000:$0.6300 2500:$0.5590
CSD19533Q5AT DISTI # 595-CSD19533Q5AT	MOSFET 100V, 7.8mOhm SON5x6 N-ch NexFET RoHS: Compliant	1269	1:$1.5200 10:$1.3000 100:$0.9960 250:$0.9960 500:$0.8800
CSD19533Q5AT DISTI # CSD19533Q5AT	Transistor: N-MOSFET,unipolar,100V,100A,96W,VSONP8 5x6mm	142	1:$1.4300 3:$1.2900 10:$1.1400 50:$1.0200 250:$0.9500
CSD19533Q5AT	INSTOCK	2978
CSD19533Q5AT DISTI # C1S746204229392	MOSFETs RoHS: Compliant	47	25:$1.2044 10:$1.2172
CSD19533Q5A DISTI # 2419502RL	MOSFET, N CHANNEL, 100V, 100A, SON-8 RoHS: Compliant	0	1:$2.1900 10:$1.8700 100:$1.4300 500:$1.2600 1000:$0.9970 2500:$0.8850
CSD19533Q5A DISTI # 2419502	MOSFET, N CHANNEL, 100V, 100A, SON-8 RoHS: Compliant	0	1:$2.1900 10:$1.8700 100:$1.4300 500:$1.2600 1000:$0.9970 2500:$0.8850
CSD19533Q5A. DISTI # 2413269	MOSFET, N-CH, 100V, 100A, SON-8 RoHS: Compliant	730	1:$1.9700 10:$1.6800 25:$1.5500 50:$1.4200 100:$1.2900 250:$1.2100
CSD19533Q5A DISTI # 2419502	MOSFET, N CHANNEL, 100V, 100A, SON-8 RoHS: Compliant	0	5:£0.9840 25:£0.8900 100:£0.6840 250:£0.6440 500:£0.6030

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