PartNumber | CSD19533Q5A | CSD19533KCS | CSD19533Q5AQ |
Description | MOSFET 100V 7.8mOhm N-CH Pwr MOSFET | MOSFET 100V 8.7mOhm N-CH Pwr MOSFET | |
Manufacturer | Texas Instruments | Texas Instruments | - |
Product Category | MOSFET | MOSFET | - |
RoHS | E | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | Through Hole | - |
Package / Case | VSONP-8 | TO-220-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 100 V | 100 V | - |
Id Continuous Drain Current | 100 A | 100 A | - |
Rds On Drain Source Resistance | 9.4 mOhms | 10.5 mOhms | - |
Vgs th Gate Source Threshold Voltage | 2.2 V | 2.8 V | - |
Vgs Gate Source Voltage | 10 V | 20 V | - |
Qg Gate Charge | 27 nC | 27 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 175 C | - |
Pd Power Dissipation | 96 W | 188 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Tradename | NexFET | NexFET | - |
Packaging | Reel | Tube | - |
Height | 1 mm | 16.51 mm | - |
Length | 6 mm | 10.67 mm | - |
Series | CSD19533Q5A | CSD19533KCS | - |
Transistor Type | 1 N-Channel Power MOSFET | 1 N-Channel | - |
Width | 4.9 mm | 4.7 mm | - |
Brand | Texas Instruments | Texas Instruments | - |
Fall Time | 5 ns | 2 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 6 ns | 5 ns | - |
Factory Pack Quantity | 2500 | 50 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 16 ns | 12 ns | - |
Typical Turn On Delay Time | 6 ns | 7 ns | - |
Forward Transconductance Min | - | 115 S | - |
Unit Weight | - | 0.211644 oz | - |