PartNumber | CSD19536KTT | CSD19536KTTT | CSD19536KCS |
Description | MOSFET 100V, N ch NexFET MOSFETG , single D2PAK, 2.4mOhm 3-DDPAK/TO-263 -55 to 175 | MOSFET 100V N-Channel NexFET Power MOSFET | MOSFET 100V N-CH NexFET Pwr MOSFET |
Manufacturer | Texas Instruments | Texas Instruments | Texas Instruments |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | E | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | Through Hole |
Package / Case | TO-263-3 | TO-263-3 | TO-220-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 100 V | 100 V | 100 V |
Id Continuous Drain Current | 272 A | 272 A | 259 A |
Rds On Drain Source Resistance | 2.4 mOhms | 2.4 mOhms | 2.7 mOhms |
Vgs th Gate Source Threshold Voltage | 2.1 V | 2.1 V | 2.1 V |
Vgs Gate Source Voltage | 10 V | 10 V | 10 V |
Qg Gate Charge | 118 nC | 118 nC | 118 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
Pd Power Dissipation | 375 W | 375 W | 375 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Tradename | NexFET | NexFET | NexFET |
Packaging | Reel | Reel | Tube |
Height | 4.7 mm | 4.7 mm | 16.51 mm |
Length | 9.25 mm | 9.25 mm | 10.67 mm |
Series | CSD19536KTT | CSD19536KTT | CSD19536KCS |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 10.26 mm | 10.26 mm | 4.7 mm |
Brand | Texas Instruments | Texas Instruments | Texas Instruments |
Forward Transconductance Min | 329 S | 329 S | 307 S |
Fall Time | 6 ns | 6 ns | 5 ns |
Moisture Sensitive | Yes | Yes | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 8 ns | 8 ns | 8 ns |
Factory Pack Quantity | 500 | 50 | 50 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 32 ns | 32 ns | 38 ns |
Typical Turn On Delay Time | 13 ns | 13 ns | 14 ns |
Unit Weight | 0.077603 oz | 0.068654 oz | 0.211644 oz |